Adjusting DC bias voltage in plasma chambers

• US 5,891,350 A
• Filed: 06/20/1996
• Issued: 04/06/1999
• Est. Priority Date: 12/15/1994
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wu, Robert W, Carducci, James David, Luscher, Paul Ernest, Lee, Evans Yip, Pu, Bryan, Welch, Michael D, Blume, Richard, Shan, Hong Ching
• Primary Examiner(s): Russel, Jeffrey E.
• Application Number:
  US08/666,981
• Time in Patent Office: 1,020 Days
• Field of Search: 118/723 E, 118/723 MP, 118/723 MW, 118/723 ME, 118/723 MR, 118/723 MA, 118/723 I, 118/723 IR, 156/345, 204/298.01, 204/298.02, 204/298.06, 204/298.31, 204/298.34, 427/99, 427/534, 427/535, 427/569, 427/570, 427/574, 427/575, 427/578, 438/714, 438/729, 438/726, 438/731, 438/771, 438/776, 438/788, 438/792, 315/111.21, 315/111.31, 315/111.61, 216/37, 216/67, 216/71
• US Class Current: 216/71
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01J 37/32834 Exhausting

Abstract

A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

Claims

1. A plasma chamber for fabricating semiconductor devices, comprising:

(a) a plasma chamber;

(b) a gas inlet for receiving a gas into the chamber;

(c) plasma excitation means for exciting the gas to a plasma state;

(d) an exhaust port through which gas can be exhausted from the chamber;

(e) a vacuum pump, connected to the exhaust port, for exhausting gas from the chamber; and

(f) an exhaust baffle having a number of sinuous passages, wherein

(i) the baffle overlies the exhaust port so that gas exhausted from the chamber passes though the sinuous passages, and

(ii) each passage is sufficiently long and sinuous that any plasma inside the chamber does not extend completely through the passage.

2. A chamber according to claim 1, wherein the exhaust baffle comprises dielectric material.

3. A chamber according to claim 1, wherein the exhaust baffle comprises:

(a) a first baffle member including

(i) a cylindrical wall, and

(ii) an annular protrusion which extends radially outward from the cylindrical wall; and

(b) a second baffle member, positioned coaxially with and encircling the first baffle member, including

(i) a cylindrical wall, and

(ii) an annular protrusion which extends radially inward from the cylindrical wall;

(c) wherein the respective protrusions of the first and second baffle members are spaced apart in an axial direction and are at least partially overlapping in a radial direction.

4. A chamber according to claim 3, wherein:

the chamber further comprises an electrically conductive chamber wall and a first electrode mounted inside the chamber and electrically insulated from the electrically conductive chamber wall;

the first baffle member encircles the first electrode; and

the second baffle member is mounted adjacent the electrically conductive chamber wall.

5. A chamber according to claim 3, wherein:

the second baffle member is mounted close enough to the electrically conductive chamber wall to prevent the formation of said plasma between the second baffle member and the electrically conductive chamber wall.

6. For use with a semiconductor processing plasma chamber, a method of reducing deposition of particles on exhaust pump components, comprising the steps of:

providing a plasma chamber;

forming a plasma within the chamber;

exhausting gases from the chamber through an exhaust port; and

positioning over the exhaust port an exhaust baffle having a number of sinuous passages so that gas exhausted from the chamber passes through the passages of the exhaust baffle, wherein each passage is sufficiently long and sinuous that the plasma within the chamber does not extend completely through the passage.

7. For use with a semiconductor processing plasma chamber, a method of changing the DC bias voltage at a first electrode in a positive direction, comprising the steps of:

providing a plasma chamber having a number of chamber components;

connecting at least one component of the chamber to an electrical ground;

providing within the chamber a first electrode which is electrically insulated from the electrical ground;

forming a plasma within the chamber;

applying RF electrical power between the first electrode and the electrical ground so as to create a DC bias voltage at the first electrode relative to the electrical ground;

exhausting gases from the chamber through an exhaust port; and

positioning over the exhaust port an exhaust baffle having a number of sinuous passages so that gas exhausted from the chamber passes through the passages of the exhaust baffle, wherein each passage is sufficiently long and sinuous that the plasma within the chamber does not extend completely through the passage.

8. A method according to claim 7, wherein the at least one component which is connected to the electrical ground in the connecting step includes an electrically conductive wall of the chamber.

9. A method according to claim 7, wherein the positioning step further comprises insulating the exhaust baffle from the electrical ground.

10. A method according to claim 7, wherein the positioning step further comprises including within the exhaust baffle a dielectric material positioned between the plasma and the electrical ground.

11. Apparatus for plasma processing of semiconductor devices, comprising:

a vacuum chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

means for forming a plasma inside the chamber;

an RF power supply connected between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

a dielectric shield mounted between the plasma and a selected area of the second electrode so as to block direct contact between the plasma and said selected area of the second electrode, wherein the shield is mounted at a non-zero distance from the second electrode; and

a seal between the second electrode and the perimeter of the dielectric shield for preventing plasma from entering between the shield and the second electrode.

12. Apparatus for plasma processing of semiconductor devices, comprising:

a vacuum chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

means for forming a plasma inside the chamber;

an RF power supply connected between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode; and

a dielectric shield mounted between the plasma and a selected area of the second electrode so as to block direct contact between the plasma and said selected area of the second electrode, wherein the shield is mounted at a non-zero distance from the second electrode;

wherein the second electrode includes an electrically conductive wall of the chamber.

13. Apparatus according to claim 12, wherein:

the electrically conductive wall is connected to an electrical ground; and

the RF power supply is connected between the first electrode and the electrical ground.

14. For use in a semiconductor processing plasma chamber, a method of changing the DC bias voltage at a first electrode in a positive direction, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

positioning a dielectric shield between the plasma and a selected area of the second electrode so as to block direct contact between the plasma and said selected area of the second electrode and so as to position the shield at a non-zero distance from the second electrode; and

sealing between the second electrode and the perimeter of the shield to prevent plasma from entering between the shield and the second electrode.

15. For use in a semiconductor processing plasma chamber, a method of changing the DC bias voltage at a first electrode in a positive direction, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

positioning a dielectric shield between the plasma and a selected area of the second electrode so as to block direct contact between the plasma and said selected area of the second electrode, wherein the shield includes a dielectric material having a substantially higher thermal conductivity than quartz.

16. A method of controllably changing the DC bias voltage at a first electrode in a semiconductor processing plasma chamber, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode; and

positioning a first dielectric shield between the plasma and a first selected portion of the second electrode so as to block direct contact between the plasma and said selected portion of the second electrode and so as to position the shield away from the second electrode so as to create a gap between the shield and the second electrode; and

sealing between the second electrode and the perimeter of the shield so as to prevent the formation of plasma in the gap;

wherein the positioning step further includes adjusting said DC bias voltage by adjusting at least one of the parameters within the group consisting of

(i) the thickness of the shield, and

(ii) the spacing between the shield and the second electrode.

17. A method of controllably changing the DC bias voltage at a first electrode in a semiconductor processing plasma chamber, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

positioning a first dielectric shield between the plasma and a first selected portion of the second electrode so as to block direct contact between the plasma and said selected portion of the second electrode; and

adjusting the bias voltage by replacing the first dielectric shield with a second dielectric shield having a different dielectric constant.

18. A method of controllably changing the DC bias voltage at a first electrode in a semiconductor processing plasma chamber, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

positioning a first dielectric shield between the plasma and a first selected portion of the second electrode so as to block direct contact between the plasma and said selected portion of the second electrode;

performing in the chamber a process for etching a non-dielectric material while the first dielectric shield is positioned in the chamber; and

performing in the chamber a process for etching a dielectric material while the first dielectric shield is absent from the chamber.

19. A method of controllably changing the DC bias voltage at a first electrode in a semiconductor processing plasma chamber, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

positioning a first dielectric shield between the plasma and a first selected portion of the second electrode so as to block direct contact between the plasma and said selected portion of the second electrode;

performing in the chamber a plasma process for etching a non-dielectric material while the first dielectric shield is positioned in the chamber; and

performing in the chamber a plasma process for etching a dielectric material while a second dielectric shield is positioned in the chamber, wherein the second shield has physical characteristics different from those of the first shield so as to produce a more negative DC bias voltage on the first electrode.

20. A method of controllably changing the DC bias voltage at a first electrode in a semiconductor processing plasma chamber, comprising the steps of:

providing a plasma chamber having first and second electrodes, the two electrodes being electrically insulated from each other;

forming a plasma inside the chamber;

applying RF electrical power between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode;

positioning a first dielectric shield between the plasma and a first selected portion of the second electrode so as to block direct contact between the plasma and said selected portion of the second electrode;

performing in the chamber a first plasma process while both the first dielectric shield and a second dielectric shield are positioned in the chamber, the second shield being positioned between the plasma and a second selected portion of said second electrode; and

performing in the chamber a second plasma process while the first dielectric shield is positioned in the chamber and the second dielectric shield is absent from the chamber.

21. A method according to claim 20, wherein:

the first plasma process is a process for etching a non-dielectric material; and

the second plasma process is a process for etching a dielectric material.