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Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform

  • US 5,891,761 A
  • Filed: 08/22/1997
  • Issued: 04/06/1999
  • Est. Priority Date: 06/23/1994
  • Status: Expired due to Term
First Claim
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1. A method of forming a stack of electrical circuitry, the method comprising the steps of:

  • vertically placing a stack of segments on top of one another, each of said segments including a plurality of edges, a plurality of die having circuitry therein, and electrically conductive contact points;

    interconnecting said plurality of die on each of said segments and connecting one or more of said plurality of die to one or more of said electrically conductive contact points on each of said segments;

    providing access to said electrically conductive contact points on each of said segments;

    electrically interconnecting said electrically conductive points on each of said segments in said stack, and providing a lateral electrical connection to said plurality of die located in each of said segments in said stacks, wherein each of said segments are interconnected with functioning and non-functioning die, and wherein said non-functioning die are disconnected from said functioning die, and metal traces on each of said segments are routed so that particular ones of said functioning die replace said non-functioning die, anddisposing a thermally conductive epoxy preform between each of said segments for epoxying said segments together.

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