Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same

• US 5,892,278 A
• Filed: 05/21/1997
• Issued: 04/06/1999
• Est. Priority Date: 05/24/1996
• Status: Expired due to Fees

• Current Assignee: Dai Nippon Printing Company Limited, Nippon Light Metal Company Limited (Nippon Light Metal Holdings Co., Ltd.)
• Original Assignee: Dai Nippon Printing Company Limited, Nippon Light Metal Company Limited (Nippon Light Metal Holdings Co., Ltd.)
• Inventors: Miura, Yoichi, Sasaki, Masato, Hirayama, Yoshio, Horita, Hideo
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US08/861,191
• Time in Patent Office: 685 Days
• Field of Search: 257/706, 257/707, 257/796
• US Class Current: 257/706
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 Diameter ranges

Abstract

An aluminum or aluminum alloy radiator possessing high reliability and excellent heat dissipation is provided. A process for producing an aluminum alloy radiator is also provided which has improved adhesion between the radiator and the mold resin and can prevent cracking in a resin molded portion.

The aluminum alloy radiator, for a plastic molded type semiconductor device, comprising an anodized aluminum-iron alloy having an iron content of 0.5 to 3.0% by weight or an anodized aluminum-silicon alloy having a silicon content of 0.5 to 3.5% by weight. The process for producing an aluminum alloy radiator for a plastic molded type semiconductor device, comprising the steps of: anodizing an aluminum alloy; and subjecting the anodized aluminum alloy to sealing, wherein the aluminum alloy radiator after the sealing is heat-treated at a temperature of 180 to 250° C.

Claims

1. An aluminum alloy radiator for a plastic molded type semiconductor device, said radiator comprising an anodized aluminum alloy, wherein the aluminum alloy comprises 0.5 to 3.0% by weight of iron with the balance consisting of aluminum and unavoidable impurities.

2. An aluminum alloy radiator for a plastic molded type semiconductor device, said radiator comprising an anodized aluminum alloy, wherein the aluminum alloy comprises 0.5 to 3.0% by weight of iron and 0.2 to 0.8% by weight of manganese with the balance consisting of aluminum and unavoidable impurities.

3. An aluminum alloy radiator for a plastic molded type semiconductor device, said radiator comprising an anodized aluminum alloy, wherein the aluminum alloy comprises 0.5 to 3.0% by weight of iron and 0.2 to 0.8% by weight of nickel with the balance consisting of aluminum and unavoidable impurities.

4. An aluminum alloy radiator for a plastic molded type semiconductor device, said radiator comprising an anodized aluminum alloy, wherein the aluminum alloy comprises 0.5 to 3.5% by weight of silicon with the balance consisting of aluminum and unavoidable impurities.