Packaging for electronic power devices and applications using the packaging

• US 5,892,279 A
• Filed: 12/11/1995
• Issued: 04/06/1999
• Est. Priority Date: 12/11/1995
• Status: Expired due to Term

• Current Assignee: Perfect Galaxy International Limited
• Original Assignee: Northrop Grumman Corporation
• Inventors: Nguyen, Ngon B.
• Primary Examiner(s): Arroyo, Teresa M.
• Application Number:
  US08/570,051
• Time in Patent Office: 1,212 Days
• Field of Search: 257/705, 257/712, 257/706, 257/714, 257/717, 257/723, 257/4, 257/686, 257/691, 257/678, 174/163, 318/768, 361/702, 361/699
• US Class Current: 257/712
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48195 the item being a discrete passive component
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/30107 Inductance

Abstract

A packaging for high-power devices such as Insulated Gate Bipolar Transistors includes a direct bonded copper substrate (DBC), such as beryllium oxide (BeO), soldered directly to a heat generating surface of the high-power device. The direct bonded copper substrate (DBC) is, in turn, soldered directly to a liquid cooled heatsink (HS). The packaging improves the thermal management of the heat generated by the high-power device, and is applicable for use in a switching circuit for a 3-phase electric traction motor (M). The assembly also provides for improved wirebonding design in order to use each high-power device to its fullest.

Claims

1. A packaging for an electronic device comprising:

at least one electronic device having a heat generating surface;

a direct bonded copper substrate having a first surface lying on a substrate portion of said direct bonded copper substrate;

a heat sink in thermal contact with a second surface of said direct bonded copper substrate;

a first solder connection directly connecting the first surface of said direct bonded copper substrate and the heat generating surface of said electronic device; and

a second solder connection directly connecting the second surface of said direct bonded copper substrate and a first side of said heat sink,

wherein the first surface extends beyond an edge of the substrate portion of said direct bonded copper substrate thereby forming a wing which is generally coplanar with the first surface.

2. The packaging of claim 1, wherein the first surface and the second surface lie on opposite sides of said direct bonded copper substrate.

3. The packaging of claim 1, further including:

at least one second electronic device having a heat generating surface;

a second direct bonded copper substrate having a third surface soldered to the heat generating surface of said at least one second electronic device, and a fourth surface on a side opposite the side of the third surface; and

a third solder connection directly connecting the fourth surface of said second direct bonded copper substrate and a second side of said heat sink, such that said heat sink is sandwiched between said at least one electronic device and said at least one second electronic device.

4. The packaging of claim 1, wherein said heat sink is a liquid cooled heat sink.

5. The packaging of claim 4, wherein said liquid cooled heat sink is a microchannel liquid cooled heat sink.

6. The packaging of claim 1, further including:

a cover for covering the at least one electronic device, the cover including a cavity along a first surface thereof, the cavity formed to accept the at least one electronic device.

7. The packaging of claim 1, further including:

a plurality of said electronic devices arranged adjacent one another on said direct bonded copper substrate, each of said electronic devices being a semiconductor chip having a respective heat generating surface soldered to the first surface of said direct bonded copper substrate and having a respective first connection point;

a first common conduction pad disposed to one side of said plurality of connection points such that a shortest distance between an edge of said conduction pad to the first connection point of a first semiconductor chip differs from a shortest distance from the edge to the first connection point of a second one of said semiconductor chips; and

a plurality of wirebonds of equal length, a first wirebond being connected to the first connection point of the first semiconductor chip and to said first common conduction pad, and a second wirebond being connected to the first connection point of the second semiconductor chip and to said first common conduction pad, such that said plurality of semiconductor chips are connected in parallel to said first common conduction pad.

8. The packaging of claim 7, wherein said common conduction pad is a copper layer included in said direct bonded copper substrate.

9. The packaging of claim 7, wherein said semiconductor chips are identical Insulated Gate Bipolar Transistors having emitters at their respective first connection points, and further wherein said first common conduction pad is an emitter pad wirebonded through said plurality of wirebonds to the emitters of said Insulated Gate Bipolar Transistors.

10. The packaging of claim 9, wherein each of said Insulated Gate Bipolar Transistors further includes a respective collector surface, the packaging further comprising:

a second common conduction pad, said second common conduction pad being electrically connected to the collector surfaces of each Insulated Gate Bipolar Transistor.

11. The packaging of claim 1, wherein said direct bonded copper substrate includes a direct bonded copper beryllium oxide substrate.

12. The packaging of claim 1, wherein said at least one electronic device includes three first semiconductor power devices and three second semiconductor power devices having respective heat generating surfaces, each of the three second semiconductor power devices being respectively connected to one of said three first semiconductor power devices to form three pairs of power devices, said packaging further including:

a propulsion battery having first and second bus bars, the first bus bar being connected to the wing; and

a 3-phase electrical traction motor having three terminals, each terminal being connected to a respective one of said three pairs of power devices.

13. The packaging of claim 12, further including:

a second direct bonded copper substrate having a first surface soldered to the heat generating surfaces of said three second electronic devices;

at least one capacitance connected between the first and second bus bars; and

said heat sink is a liquid cooled heat sink soldered to said direct bonded copper substrate and to said second direct bonded copper substrate.

14. The packaging of claim 1, wherein said at least one electronic device includes at least one semiconductor power device having a first connection point, the packaging further including:

a second surface on said direct bonded copper substrate, said second surface including a copper layer forming a ring;

a wirebond electrically connecting said second surface directly to the first connection point of said semiconductor power device.

15. The packaging of claim 14, further including:

an electrically conductive lid secured directly to said second surface of said direct bonded copper substrate, the lid forming a hermetic seal for the at least one semiconductor power device.

16. The packaging of claim 15, further including:

a plurality of said semiconductor power devices arranged on a first copper layer of said direct bonded copper substrate, the first copper layer being the first surface and being electrically insulated from said second surface by an insulating layer of said direct bonded copper substrate, each of said semiconductor power devices having a first connection point and also having a respective heat generating surface soldered to the first copper layer;

a first common conduction pad disposed to one side of said plurality of connection points such that a shortest distance between an edge of said conduction pad to the connection point of a first one of said semiconductor power devices differs from a shortest distance from the edge to the connection point of a second one of said semiconductor power devices; and

a plurality of said wirebonds, each wirebond being of equal length, one of said wirebonds being connected to the first connection point of the first semiconductor power device and to said first common conduction pad, and another of said wirebonds being connected to the first connection point of the second semiconductor power device and to said first common conduction pad, such that said first and second semiconductor power devices are connected in parallel to said first common conduction pad.

17. The packaging of claim 16, wherein said semiconductor power devices are Insulated Gate Bipolar Transistors.

18. The packaging of claim 1, wherein said direct bonded copper substrate further includes a third surface separated from and generally coplanar with the first surface, the third surface extending beyond a second edge of the substrate portion of said direct bonded copper substrate thereby forming a second wing.

19. The packaging of claim 18, wherein the second edge is opposite the edge, such that the wing and the second wing extend in opposite directions from the substrate portion of said direct bonded copper substrate, the wing and the second wing being generally planar and parallel to each other.

20. The packaging of claim 1, wherein said direct bonded copper substrate further includes a third surface separated from and non-coplanar with the first surface, the third surface extending beyond a second edge of the substrate portion of said direct bonded copper substrate thereby forming a second wing.

21. The packaging of claim 20, wherein the second edge is opposite the edge, such that the wing and the second wing extend in opposite directions from the substrate portion of said direct bonded copper substrate, the wing and the second wing being generally planar and parallel to each other.

22. The packaging of claim 14, wherein said ring lies in a different plane than the first surface of said direct bonded copper substrate.

23. The packaging of claim 3, wherein the third surface of said second direct bonded copper substrate extends beyond an edge of a substrate portion of said second direct bonded copper substrate thereby forming a second wing which is generally coplanar with the third surface.

24. A packaging for an electronic device comprising:

at least one electronic device having a heat generating surface, wherein said at least one electronic device includes at least one first semiconductor power device;

a direct bonded copper substrate having a first surface in thermal contact with the heat generating surface;

a heat sink in thermal contact with a second surface of said direct bonded copper substrate;

at least one second semiconductor power device having a heat generating surface;

a second direct bonded copper substrate having a first surface soldered to the heat generating surface of said at least one second semiconductor power device; and

a second heat sink soldered to a second surface of said second direct bonded copper substrate,

wherein said at least one first semiconductor power device, said direct bonded copper substrate, and said heat sink form a first unit; and

said at least one second semiconductor power device, said second direct bonded copper substrate, and said second heat sink form a second unit, and

further wherein each of said first and second units includes respective first and second common conduction pads, the first common conduction pad of the first unit being connected to the second common conduction pad of the second unit by a load connector.

25. The packaging of claim 24, further including:

an electrically insulated mounting base for supporting the first and second units in back-to-back relation; and

an external power source having a plurality of bus bars, a first of said bus bars being electrically connected to the first common conduction pad of the first unit and a second of said bus bars being electrically connected to the first common conduction pad of the second unit.

26. The packaging of claim 25, wherein said first and second units are mounted on one side of said mounting base and said first and second bus bars lie on an opposite side of said mounting base, and further including:

a capacitor connected to the first and second bus bars and lying on the opposite side of said mounting base.

27. The packaging of claim 25, wherein said mounting base further includes quick connect/disconnect terminals electrically connected to said first and second bus bars, thereby permitting the first and second units to be quickly connected and disconnected from said mounting base.

28. The packaging of claim 25, further including:

a 3-phase electric traction motor electrically connected to said first and second units; and

a control circuit for controlling the operation of said at least one first and second semiconductor power devices so as to control the supply of power from said first and second bus bars to said 3-phase electric traction motor.

29. The packaging of claim 28, further including an electric vehicle in which said packaging is installed.

30. The packaging of claim 24, wherein said load connector is electrically conductive.

31. The packaging of claim 24, wherein the first and second surfaces of said direct bonded copper substrate lie on opposite sides of said direct bonded copper substrate, and the first and second surfaces of said second direct bonded copper substrate lie on opposite sides of said second direct bonded copper substrate.

32. The packaging of claim 24, further comprising:

a cover secured to the second side of said direct bonded copper substrate for covering at least the first semiconductor power device, the cover including a cavity formed to accept the first semiconductor power device.

33. The packaging of claim 24, wherein said load connector is a first load connector formed so as to have a plurality of spaced wings along a length of the load connector, said packaging further comprising:

a second load connector having a plurality of wings spaced at the same spacing as said first load connector, said second load connector connecting said first and second units together,

wherein, when assembled to said first and second units, the wings of said first load connector are out of alignment with the wings of said second load connector.

34. The packaging of claim 25, wherein said heat sink and said second heat sink have surfaces which abut one another when mounted in the back-to-back relation.

35. The packaging of claim 25, wherein said load connector is a first load connector having a plurality of spaced teeth along a length of the load connector, said packaging further comprising:

a second load connector having a plurality of teeth spaced at the same spacing as said first load connector, said second load connector connecting said first and second units together,

wherein, when assembled to said first and second units, said first and second load connectors lie in different planes, and the teeth of said first load connector are out of alignment with the teeth of said second load connector.

36. A packaging for an electronic device comprising:

at least one electronic device having a heat generating surface;

a direct bonded copper substrate having a first surface in thermal contact with the heat generating surface,

wherein said at least one electronic device includes at least one semiconductor power device having a respective first connection point, the packaging further including;

a second surface on said direct bonded copper substrate, said second surface including a copper layer forming a ring;

a wirebond electrically connecting said second surface to the respective first connection point; and

an electrically insulated lid secured directly to said second surface of said direct bonded copper substrate, the insulated lid forming a hermetic seal for the at least one semiconductor power device.

37. The packaging of claim 36, further including:

a plurality of said semiconductor power devices arranged adjacent one another on a first copper layer of said direct bonded copper substrate, the first copper layer forming said first surface and being electrically insulated from said second surface by an insulating layer of said direct bonded copper substrate, each of said semiconductor power devices having a respective heat generating surface soldered to the first copper layer;

a first common conduction pad; and

a plurality of said wirebonds, each wirebond being of equal length and connecting a respective first connection point to said first common conduction pad such that said plurality of semiconductor power devices are connected in parallel to said first common conduction pad.

38. A packaging for an electronic device comprising:

at least one electronic device having a heat generating surface and a first connection point;

a direct bonded copper substrate having a first surface in thermal contact with the heat generating surface;

a second surface on said direct bonded copper substrate, said second surface including a copper layer forming a ring;

a wirebond connection electrically connecting said second surface to the first connection point; and

an insulated lid secured directly to said second surface of said direct bonded copper substrate, the insulated lid forming a hermetic seal for the at least one electronic device,

wherein said insulated lid has a first length, and further wherein said first surface and said second surface of said direct bonded copper substrate extend to form a second length parallel to the first length, the second length being greater than the first length.

39. The packaging of claim 38, wherein said second surface of said direct bonded copper substrate lies on the same side of said first surface as said electronic device, said first surface being in a different plane than said second surface.

40. The packaging of claim 38, wherein the heat generating surface of said electronic device is soldered directly to the first surface of said direct bonded copper substrate.

41. The packaging of claim 38, wherein the first and second surfaces extend beyond a substrate portion of said direct bonded copper substrate, such that a length of the substrate portion, as measured parallel to the second length, is less than the second length.

42. The packaging of claim 41, wherein the length of the substrate portion, as measured parallel to the first length, is substantially equal to the first length.

43. A packaging for an electronic device comprising:

at least one electronic device having a heat generating surface;

a direct bonded copper substrate having a first surface in thermal contact with the heat generating surface;

a heat sink in thermal contact with a second surface of said direct bonded copper substrate;

a first solder connection directly connecting the first surface of said direct bonded copper substrate and the heat generating surface of said electronic device;

a second solder connection directly connecting the second surface of said direct bonded copper substrate and a first side of said heat sink; and

a cover for covering the at least one electronic device, the cover including a cavity alone a first surface thereof, the cavity formed to accept the at least one electronic device,

wherein the first surface is on a first side of said cover, and said cover includes a second cavity on a second side thereof, the second surface being parallel to the first surface of the cover, the second cavity being formed to accept the at least one electronic device of another packaging for another electronic device, such that said cover is sandwiched between said packagings.

44. A wirebonded package for electronic devices comprising:

at least first and second electronic devices arranged on a thermally conductive layer, each device having a respective connection point;

a first common conduction pad disposed to one side of said connection points such that a shortest distance between an edge of said conduction pad to the connection point of said first electronic device differs from a shortest distance from the edge to the connection point of said second electronic device; and

first and second wirebonds of equal length, each wirebond being attached to a respective connection point and to said first common conduction pad such that said first and second electronic devices are connected in parallel to said first common conduction pad.

45. The wirebonded packaging of claim 44, wherein said thermally conductive layer includes a direct bonded copper substrate, and further wherein each electronic device has a heat generating surface soldered to said direct bonded copper substrate.

46. The packaging of claim 45, wherein there are more than two of said wirebonds and more than two of said electronic devices, said electronic devices being semiconductor power devices arranged in adjacent rows, each row extending along the edge of said first common conduction pad, and each row being at a different distance from the edge;

and

further wherein said plurality of wirebonds are arranged generally parallel to one another and generally perpendicular to the edge of said first common conduction pad.

47. The wirebonded packaging of claim 45, wherein each of said electronic devices is an Insulated Gate Bipolar Transistor.

48. The wirebonded packaging of claim 44, further including:

at least third and fourth electronic devices arranged on the thermally conductive layer, each having a respective second connection point;

a second common conduction pad; and

third and fourth wirebonds of equal length to each other, said third and fourth wirebonds respectively connected to the second connection points and to said second common conduction pad such that said third and fourth electronic devices are connected in parallel to said second common conduction pad.