Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same

• US 5,893,730 A
• Filed: 02/19/1997
• Issued: 04/13/1999
• Est. Priority Date: 02/23/1996
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukunaga, Takeshi, Koyama, Jun, Yamazaki, Shunpei, Miyanaga, Akiharu
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US08/802,675
• Time in Patent Office: 783 Days
• Field of Search: 438/151, 438/166, 148/DIG. 16, 148/8, 148/9, 148/7
• US Class Current: 438/166
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.

Claims

1. A method for manufacturing a thin film semiconductor comprising the steps of:

forming a silicon oxide film by sputtering on a surface of a substrate having an insulating surface;

intentionally forming at least a concave or convex pattern by patterning said silicon oxide film into a shape;

forming an amorphous silicon film by low pressure thermal CVD on said silicon oxide film;

forming a metallic element which accelerates the crystallization to said silicon oxide film and/or said amorphous silicon film;

crystallizing said amorphous silicon film into a crystalline silicon film by heat treatment; and

irradiating a laser light or an intense light having an energy equivalent to that of said laser light to said crystalline silicon film,

wherein said crystalline silicon film is formed into a monodomain region by irradiating a laser light or an intense light having an energy equivalent to that of said laser light.

2. A method for manufacturing a thin film semiconductor according to claim 1 wherein the crystalline silicon film is formed by a plurality of columnar or needle-like crystals being aggregated approximately in parallel with said substrate.

3. A method for manufacturing a thin film semiconductor according to claim 1 wherein the step of forming a silicon oxide film is conducted by sputtering using an artificial quartz target.

4. A method for manufacturing a thin film semiconductor according to claim 1 wherein the metallic element which accelerates the crystallization is one or a plurality of elements selected from the group of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

5. A method for manufacturing a semiconductor device having an active layer comprising the thin film semiconductor, said method comprising the steps of:

forming a silicon oxide film by sputtering on the surface of a substrate having an insulating surface;

intentionally forming at least a concave or convex pattern by patterning said silicon oxide film into a shape;

forming an amorphous silicon film by low pressure thermal CVD on said silicon oxide film;

forming a metallic element which accelerates the crystallization to the amorphous silicon film;

crystallizing said amorphous silicon film into a crystalline silicon film by means of heat treatment; and

irradiating a laser light or an intense light having an energy equivalent to that of said laser light to said crystalline silicon film, wherein;

said crystalline silicon film is modified into a monodomain region by the step of irradiating a laser light or an intense light having an energy equivalent to that of said laser light; and

said active layer is formed by using only said monodomain region.

7. A method for manufacturing a semiconductor device according to claim 5 or 6 wherein said crystalline silicon film is formed by a plurality of columnar or needle-like crystals being aggregated approximately in parallel with said substrate.

8. A method for manufacturing a semiconductor device according to claim 5 or 6 wherein the step of forming a silicon oxide film is formed by sputtering using an artificial quartz target.

9. A method for manufacturing a semiconductor device according to claim 5 or 6 wherein the metallic element which accelerates the crystallization is one or a plurality of elements selected from the group of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

6. A method for manufacturing a semiconductor device having an active layer comprising a thin film semiconductor, said method comprising the steps of:

forming a silicon oxide film by sputtering on the surface of a substrate having an insulating surface;

intentionally forming at least a concave or convex pattern by patterning said silicon oxide film into a shape;

forming an amorphous silicon film by means of low pressure thermal CVD on said silicon oxide film;

forming a metallic element which accelerates the crystallization to said amorphous silicon film;

crystallizing said amorphous silicon film into a crystalline silicon film by heat treatment;

modifying said crystalline silicon film into a monodomain region by irradiating a laser light or an intense light having an energy equivalent to that of said laser light to said crystalline silicon film;

forming an active layer by using said monodomain region alone;

forming an insulating film covering said active layer and containing silicon as a main component by vapor phase method;

performing heat treatment in an atmosphere containing a halogen element for gettering and removing the metallic element which accelerates the crystallization and, at the same time, forming a thermal oxide film at the interface between the active layer and said insulating film containing silicon as a main component; and

performing heat treatment under gaseous nitrogen atmosphere to thereby improve the film quality of said insulating film containing silicon as a main component inclusive of said thermal oxide film.

10. A method for fabricating a thin film transistor comprising:

forming an insulating film on a surface of a substrate;

forming at least a concave or a convex pattern intentionally on said insulating film;

forming a semiconductor film in contact with an upper surface of said insulating film;

forming a catalyst for promoting crystallization of said semiconductor film in contact with said semiconductor film;

crystallizing said semiconductor film to form a plurality of columnar or needle-like crystals in parallel with said substrate therein;

irradiating said semiconductor film with a laser light or an intense light having an energy equivalent to said laser light to aggregate said plurality of columnar or needle-like crystals so that at least a monodomain region is formed, said monodomain region being regarded as substantially a single crystal.

11. A method according to claim 10 wherein the monodomain region is substantially free of crystal grain boundaries.

14. A method according to any claims 10 to 13 wherein said monodomain region has a film thickness of 150 to 450 Å

.

15. A method according to any of claims 10 to 13 wherein an outer portion of said monodomain region is made convex by the irradiation of laser light or an intense light having an energy equivalent to the laser light.

16. A method according to any of claims 10 to 13 wherein a film thickness of an outer portion of the monodomain region is greater than that of the monodomain region.

17. A method according to any of claims 10 to 13 further comprising adding hydrogen into the thin film semiconductor constituting the monodomain region at a concentration of 1×

10¹⁵ to 1×

10²¹ atoms/cm³.

18. A method according to any of claims 10 to 13 wherein said monodomain region comprises:

a first region being a vertical growth region on said concave or convex pattern; and

a second region being a lateral growth region obtained by crystal growth initiated from said vertical growth region and grown in a direction approximately parallel to the surface of the silicon film,

wherein said vertical growth region containing a metallic element at a concentration higher than that in said lateral growth region.

12. A method for fabricating a thin film transistor comprising:

forming an insulating film on a surface of a substrate;

forming at least a concave or a convex pattern intentionally on said insulating film;

forming a semiconductor film in contact with an upper surface of said insulating film;

forming a catalyst for promoting crystallization of said semiconductor film in contact with said semiconductor film;

crystallizing said semiconductor film to form a plurality of columnar or needle-like crystals substantially in parallel with said substrate therein;

irradiating said semiconductor film with a laser light or an intense light having an energy equivalent to a laser light to aggregate said plurality of columnar or needle-like crystals so that at least a monodomain region is formed, said monodomain region being substantially free of crystal grain boundaries.

13. A method of manufacturing a thin film transistor comprising:

forming a silicon oxide film by sputtering on a surface of a substrate having an insulating surface;

intentionally forming at least a concave or convex pattern by patterning said silicon oxide film into a predetermined shape;

forming an amorphous silicon film by low pressure thermal CVD on said silicon oxide film;

forming a metallic element which accelerates crystallization to said silicon oxide film and/or said amorphous silicon film;

crystallizing said amorphous silicon film into a crystalline silicon film by heat treatment; and

irradiating a laser light or an intense light having an energy equivalent to that of the laser light to said crystalline silicon film to thereby modify said crystalline silicon film into a monodomain region.

19. A method for fabricating a thin film transistor comprising:

forming an insulating film on a surface of a substrate;

forming at least a concave or a convex pattern intentionally on said insulating film;

forming a semiconductor film in contact with an upper surface of said insulating film;

forming a catalyst for promoting crystallization of said semiconductor film in contact with said semiconductor film;

crystallizing said semiconductor film to form a plurality of columnar or needle-like crystals in parallel with said substrate therein;

irradiating said semiconductor film with a laser light or an intense light having an energy equivalent thereto to aggregate said plurality of columnar or needle-like crystals so that at least a monodomain region is formed, said monodomain region being substantially a single crystal,

wherein an active layer of said thin film transistor is formed by said monodomain region alone.

20. A method according to claim 19 wherein said active layer is substantially free of crystal grain boundaries.

25. A method according to any of claims 19 to 24 wherein the film thickness of the active layer is in a range of 150 to 450 Å

.

26. A method according to any of claims 19 to 24 further comprising adding hydrogen into the active layer at a concentration of 1×

10¹⁵ to 1×

10²¹ atoms/cm³.

21. A method for fabricating a thin film transistor comprising:

forming an insulating film on a surface of a substrate;

forming at least a concave or a convex pattern intentionally on said insulating film;

forming a semiconductor film in contact with an upper surface of said insulating film;

forming a catalyst for promoting crystallization of said semiconductor film in contact with said semiconductor film;

crystallizing said semiconductor film to form a plurality of columnar or needle-like crystals in parallel with said substrate therein;

irradiating said semiconductor film with a laser light or an intense light having an energy equivalent to said laser light to aggregate said plurality of columnar or needle-like crystals so that at least a monodomain region is formed, said monodomain region being substantially free of crystal grain boundaries; and

patterning said monodomain region to form an active layer on said thin film transistor,

wherein said active layer of said thin film transistor includes no grain boundary.

22. A method of manufacturing a semiconductor device comprising:

forming a silicon oxide film by sputtering on a surface of a substrate having an insulating surface;

intentionally forming at least a concave or convex pattern by patterning said silicon oxide film into a predetermined shape;

forming an amorphous silicon film by low pressure thermal CVD on said silicon oxide film;

forming a metallic element which accelerates the crystallization to said amorphous silicon film;

crystallizing the amorphous silicon film into a crystalline silicon film by heat treatment; and

irradiating a laser light or an intense light having an energy equivalent to that of said laser light to said crystalline silicon film to thereby modify said crystalline silicon film into a monodomain region, wherein an active layer is formed by said monodomain alone.

23. A method of manufacturing a semiconductor device having an active layer made from a thin film semiconductor, said method comprising:

forming a silicon oxide film by sputtering on the surface of a substrate having an insulating surface;

intentionally forming at least a concave or convex pattern by patterning said silicon oxide film into a shape;

forming an amorphous silicon film by low pressure thermal CVD on said silicon oxide film;

forming a metallic element which accelerates crystallization to said amorphous silicon film;

crystallizing said amorphous silicon film into a crystalline silicon film by heat treatment;

irradiating a laser light or an intense light having an energy equivalent to that of said laser light to the crystalline silicon film, to thereby modify said crystalline silicon film into a monodomain region;

forming an active layer by using said monodomain region alone;

forming an insulating film covering said active layer and containing silicon as a main component by vapor phase method;

performing heat treatment in an atmosphere containing a halogen element for gettering and removing metallic element which accelerates said crystallization of said active layer and, at the same time, forming a thermal oxide film at the interface between said active layer and said insulating film having silicon as a main component; and

performing heat treatment under gaseous nitrogen atmosphere to thereby improve the film quality of said insulating film containing silicon as a main component including said thermal oxide film.

24. A method according to claim 23, further comprising:

a layered film comprising said insulating film containing silicon as a main component and said thermal oxidation film functions as the gate insulating film, and

a halogen element is present at a high concentration in the vicinity of the interface between said active layer and said gate insulating film.

27. A method for fabricating a semiconductor device having an active layer made from a thin film semiconductor on an insulating film formed on the upper side of active circuits being integrated on a silicon substrate, said method comprising:

forming at least a concave or a convex pattern intentionally on said insulating film;

forming a semiconductor film in contact with an upper surface of said insulating film;

forming a catalyst for promoting crystallization of said semiconductor film in contact with said semiconductor film;

crystallizing said semiconductor film to form a plurality of columnar or needle-like crystals in parallel with said substrate therein;

irradiating said semiconductor film with a laser light or an intense light having an energy equivalent to a laser light to aggregate said plurality of columnar or needle-like crystals so that at least a monodomain region is formed, said monodomain region being substantially free of crystal grain boundaries, and

forming an active layer of said thin film transistor from only said monodomain region.