Process for forming a semiconductor device
DCFirst Claim
1. A process for forming a semiconductor device comprising the steps of:
- placing a substrate in a processing chamber;
forming a first conductive film that includes a refractory metal and nitrogen over the substrate, wherein;
the first conductive film includes a first portion and a second portion;
the first portion lies closer to the substrate and has a first nitrogen atomic percentage;
the second portion lies further from the substrate has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and
a change between the first nitrogen atomic percent and the second atomic percent within the first conductive film is essentially continuous; and
forming a second conductive film over the first conductive film, wherein the second conductive film includes mostly copper.
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Abstract
A semiconductor device comprises a substrate (100), first conductive film (22 and 32) over the substrate (100), and a second conductive film (54 and 64) over the first conductive film (22 and 32). The first conductive film includes a refractory metal and nitrogen. The first conductive film has a first portion (22) that lies closer to the substrate and a second portion (32) that lies further from the substrate. The nitrogen percentage for the second portion (32) is lower than the nitrogen atomic percentage for the first portion (22). The second conductive film (54 and 64) includes mostly copper. The combination of portions (22 and 32) within the first conductive film provides a good diffusion barrier (first portion) and has good adhesion (second portion) with the second conductive film (54 and 64).
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Citations
22 Claims
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1. A process for forming a semiconductor device comprising the steps of:
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placing a substrate in a processing chamber; forming a first conductive film that includes a refractory metal and nitrogen over the substrate, wherein; the first conductive film includes a first portion and a second portion; the first portion lies closer to the substrate and has a first nitrogen atomic percentage; the second portion lies further from the substrate has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and a change between the first nitrogen atomic percent and the second atomic percent within the first conductive film is essentially continuous; and forming a second conductive film over the first conductive film, wherein the second conductive film includes mostly copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A process for forming a semiconductor device comprising the steps of:
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forming a patterned insulating layer over a substrate, wherein the patterned insulating layer includes an opening; forming a first conductive film that includes tantalum and nitrogen, wherein; the first conductive film includes a first portion and a second portion; the first portion lies closer to the substrate and has a first nitrogen atomic percentage; and the second portion lies further from the substrate and has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and forming a second conductive film on the first conductive film, wherein the second conductive film includes mostly copper; polishing the second conductive film to remove the second conductive film overlying the patterned insulating layer outside of the opening; and polishing the first conductive film to remove the first conductive film overlying the patterned insulating layer outside of the opening. - View Dependent Claims (19, 20, 21, 22)
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Specification