Method for etching nitride

• US 5,895,223 A
• Filed: 12/10/1997
• Issued: 04/20/1999
• Est. Priority Date: 12/10/1997
• Status: Expired due to Term

• Current Assignee: Transpacific IP Group Limited
• Original Assignee: Industrial Technology Research Institute
• Inventors: Chen, Chin-Yuan, Chuang, Chih-Wei, Peng, Lung-Han, Ho, Jin-Kuo
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US08/988,301
• Time in Patent Office: 496 Days
• Field of Search: 204/129.1, 204/129.2, 204/129.3, 438/17, 438/18, 438/746, 438/752
• US Class Current: 438/18
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.

Claims

1. A method for etching nitride, comprising the steps of:

(i) coating a first electrode on a nitride chip;

(ii) mounting the nitride chip on a holding device;

(iii) dipping the holding device, the nitride chip and the first electrode in electrolysis liquid;

(iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and

(v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.

2. A method as claimed in claim 1, wherein the nitride chip is gallium nitride.

3. A method as claimed in claim 1, wherein the pH value of the electrolysis liquid is greater than 11.

4. A method as claimed in claim 1, wherein the pH value of the electrolysis liquid is less than 3.

5. A method as claimed in claim 1, wherein the UV light is irradiated by a mercury lamp.

6. A method as claimed in claim 1, wherein the UV light is irradiated by a xenon lamp.

7. A method as claimed in claim 1, wherein the UV light is a converting output of a frequency quadrupled quasi-molecular laser.

8. A method as claimed in claim 1, wherein the UV light is irradiated by a deuterium lamp.

9. A method as claimed in claim 1, wherein the first electrode is a dual-layer electrode.

10. A method as claimed in claim 1, wherein the work function of the first electrode is larger the electronic affinity of the nitride chip.

11. A method as claimed in claim 3, wherein the electrolysis liquid is KOH.

12. A method as claimed in claim 4, wherein the electrolysis liquid is H₃ PO₄.

13. A method as claimed in claim 7, wherein the quasi-molecular laser is a YAG laser.

14. A method as claimed in claim 9, wherein the dual electrode comprises an inner electrode and an outer electrode, in which the outer electrode is made of one of Re, Pt, Ru, Rh, Pd, Au, Ir and Ni and a composition thereof.

15. A method as claimed in claim 9, wherein the dual electrode comprises an inner electrode and an outer electrode, in which the inner electrode is made of one of Ti, V, Cr, Zr, Mo, Hf, Ta and W and a composition thereof.