Integrated silicon vacuum micropackage for infrared devices

• US 5,895,233 A
• Filed: 09/29/1997
• Issued: 04/20/1999
• Est. Priority Date: 12/13/1993
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Ridley, Jeffrey A., Higashi, Robert E., Stratton, Thomas G., Wood, R. Andrew
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/939,960
• Time in Patent Office: 568 Days
• Field of Search: 257/21, 257/444, 257/737, 257/777, 257/778, 257/779, 257/780, 257/227, 257/293, 257/749, 257/433, 257/434, 250/338.1, 438/107, 438/108, 438/109
• US Class Current: 438/107
• CPC Class Codes: G01J 5/04 Casings
• CPC Class Codes: G01J 5/045 Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements getter arrangements per se H01L23/26 and H01L21/3221
• CPC Class Codes: G01J 5/10 using electric radiation detectors
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

An efficient method brings together two wafers of dies that contain an infrared transparent window or top cap with either an infrared detector or emitter array to produce a low cost infrared package. A low thermal conductivity gas or a vacuum may be used between the wafers for enhanced thermal isolation. Joining of the wafers is preferably by solder, although ultrasonic bonding can be used.

Claims

1. A process of making infrared array packages from two wafers comprising:

a) evacuating a chamber contained by a top cap wafer having top cap dies and also containing an array wafer having array dies located so as to be pairable with said top cap dies;

b) physically bringing together the two wafers such that the paired arrays and the top caps are positioned so as to be sealable together;

c) sealing said wafers together;

d) dicing the paired dies.

2. A process as set forth in claim 1 wherein solder is applied to either the top cap wafer or the array wafer at some time prior to step c).

3. A process as set forth in claim 1 wherein the chamber is filled with a low thermal conductivity gas before step c).

4. A process as set forth in claim 1 wherein the sealing step employs ultrasonic bonding.