Semiconductor yaw rate sensor with a vibrating movable section with vertical and horizontal displacement detection

• US 5,895,851 A
• Filed: 07/14/1997
• Issued: 04/20/1999
• Est. Priority Date: 11/17/1994
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Kano, Kazuhiko, Hattori, Tadashi, Otsuka, Yoshinori
• Primary Examiner(s): Oda, Christine K.
• Application Number:
  US08/892,431
• Time in Patent Office: 645 Days
• Field of Search: 73/504.02, 73/504.04, 73/504.12, 73/504.14, 73/514.15, 73/514.16, 73/514.35, 73/1.37, 73/1.82
• US Class Current: 73/504.04
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01D 3/036 on measuring arrangements themselves
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/124 by semiconductor devices comprising at least one PN junction, e.g. transistors

Abstract

A yaw rate sensor, which can be structured easily and at low cost and which can also detect exerted acceleration with high accuracy, is obtained. A movable electrode section is provided spaced at a specified gap with respect to a semiconductor substrate; fixed electrodes for excitation use forcibly vibrate the movable electrode section using an electrostatic force; a vertical displacement detection portion detects a vertical displacement of the movable electrode section; a horizontal displacement detection portion detects a horizontal displacement of the movable electrode section; and using at least the detection output of the vertical displacement detection portion, a signal processing circuit obtains a yaw rate detection output. Then, an aging compensation circuit detects an amplitude condition of the movable electrode section using the output of the horizontal displacement detection means; and the forced vibration of the movable electrode section is maintained a vibration at a resonance frequency.

Claims

1. A semiconductor yaw rate sensor comprising:

a semiconductor substrate;

a bridge structure movable section movably supported on said semiconductor substrate such that a specified interval is interposed between said movable section and said semiconductor substrate;

a fixed electrode for excitation use disposed on said semiconductor substrate in order to forcibly vibrate said movable section in a horizontal direction utilizing electrostatic force;

a vertical displacement detection means for detecting a vertical displacement of said movable section;

a horizontal displacement detection means for detecting a horizontal displacement of said movable section;

a signal processing means obtaining a yaw rate detection output utilizing at least a detection output of said vertical displacement detection means; and

a correction means for keeping, based on an output of said horizontal displacement detection means, said movable section forcibly vibrated in said horizontal direction at a resonance frequency.

2. A semiconductor yaw rate sensor according to claim 1, wherein said signal processing means obtains said yaw rate detection output utilizing both detection output of said vertical and horizontal displacement detection means.

3. A semiconductor yaw rate sensor according to claim 1, further comprising a vertical position control means for controlling a distance between said semiconductor substrate and said movable section.

4. A semiconductor yaw rate sensor according to claim 2, further comprising a vertical position control means for controlling a distance between said semiconductor substrate and said movable section.

5. A semiconductor yaw rate sensor according to claim 3, wherein said vertical position control means includes an underlying electrode disposed on said semiconductor substrate beneath said movable section and a voltage adjusting means for controlling an applied voltage applied between said movable section and said underlying electrode based on said detection output of said vertical displacement detection means.

6. A semiconductor yaw rate sensor according to claim 1, wherein said vertical displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

7. A semiconductor yaw rate sensor according to claim 2, wherein said vertical displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

8. A semiconductor yaw rate sensor according to claim 3, wherein said vertical displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

9. A semiconductor yaw rate sensor according to claim 5, wherein said vertical displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

10. A semiconductor yaw rate sensor according to claim 1, wherein said horizontal displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

11. A semiconductor yaw rate sensor according to claim 2, wherein said horizontal displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

12. A semiconductor yaw rate sensor according to claim 3, wherein said horizontal displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

13. A semiconductor yaw rate sensor according to claim 6, wherein said horizontal displacement detection means includes an air gap transistor structure comprising a movable gate electrode disposed on a side of said movable section, a source electrode disposed on a side of said semiconductor substrate and a drain electrode disposed on said side of said semiconductor substrate.

14. A semiconductor yaw rate sensor according to claim 1, wherein said horizontal displacement detection means includes a capacitor structure comprising a movable electrode disposed on a side of said movable section and a fixed counter electrode disposed on a side of said semiconductor substrate.

15. A semiconductor yaw rate sensor according to claim 2, wherein said horizontal displacement detection means includes a capacitor structure comprising a movable electrode disposed on a side of said movable section and a fixed counter electrode disposed on a side of said semiconductor substrate.

16. A semiconductor yaw rate sensor according to claim 3, wherein said horizontal displacement detection means includes a capacitor structure comprising a movable electrode disposed on a side of said movable section and a fixed counter electrode disposed on a side of said semiconductor substrate.

17. A semiconductor yaw rate sensor according to claim 6, wherein said horizontal displacement detection means includes a capacitor structure comprising a movable electrode disposed on a side of said movable section and a fixed counter electrode disposed on a side of said semiconductor substrate.