Micromachined silicon micro-flow meter

• US 5,895,866 A
• Filed: 01/21/1997
• Issued: 04/20/1999
• Est. Priority Date: 01/22/1996
• Status: Expired due to Fees

• Current Assignee: Xros, Inc. (Nortel Networks Corporation)
• Original Assignee: Xros, Inc. (Nortel Networks Corporation)
• Inventors: Slater, Timothy G., Neukermans, Armand P.
• Primary Examiner(s): PATEL, HARSHAD R
• Application Number:
  US08/786,534
• Time in Patent Office: 819 Days
• Field of Search: 73/861.71, 73/861.74, 73/849, 73/720, 73/726, 73/204.26
• US Class Current: 73/861.74
• CPC Class Codes: G01F 1/26 of the valve type
• CPC Class Codes: G01F 1/28 by drag-force, e.g. vane type or impact flowmeter

Abstract

A micromachined, monolithic silicon flow meter includes a vane 28 from which projects a hinge. The hinge is provided by torsion bars 24. The hinge supports the vane 28 for rotation about the torsion bars 24. A deflection sensor, consisting of a torsion sensor 42, incorporated into at least one of the torsion bars 24, senses deflection of the vane 28 responsive to fluid impinging thereupon. The frame 22, the torsion bars 24, the vane 28 and the torsion sensor 42 are all monolithically fabricated in a semi-conductor single-crystal silicon layer of a substrate.

Claims

1. A micromachined vane flow meter adapted for use in sensing a rate at which a fluid flows through the flow meter, the flow meter comprising:

a support;

two opposing torsion bars that are aligned along a common axis, and which project from said support;

a vane that is joined to and supported from said support by said torsion bars that dispose said vane in a rest position while no external force is applied to said vane, said vane being supported by the torsion bars in the rest position for rotation about the common axis of the torsion bars by a force applied to said vane thereby imposing a shear stress on said torsion bars; and

deflection sensing means for sensing deflection of said vane from the rest position by fluid impinging upon and flowing around said vane;

said support, torsion bars, vane and deflection sensing means all being monolithically fabricated in a semiconductor single-crystal silicon layer of a substrate.

2. The flow meter of claim 1 wherein said deflection sensing means is disposed on at least one of said torsion bars for generating a torsion signal that indicates deflection of said vane from the rest position.

3. The flow meter of claim 2 wherein said deflection sensing means comprises:

at least four electrical ohmic contacts with a pair of said ohmic contacts being disposed along a line that is substantially parallel to the axis of the torsion bar; and

means for applying an electric current across a first pair of said ohmic contacts while the torsion signal is sensed from a second pair of said ohmic contacts that are oriented perpendicularly to a line joining the first pair of said ohmic contacts.

4. The flow meter of claim 3 wherein alternating current ("AC") is applied across the pair of ohmic contacts whereby the torsion signal becomes a modulation envelope of the AC.

5. The flow meter of claim 1 wherein said substrate is a silicon material which has both a 100! crystallographic direction and a 110 ! crystallographic direction, and said torsion bars are oriented along the 110 ! crystallographic direction for an n-type silicon layer.

6. The flow meter of claim 1 wherein said semiconductor substrate is a silicon material which has both a 100! crystallographic direction and a 100! crystallographic direction, and said torsion bars are oriented in the 100! crystallographic direction for a p-type silicon layer.

7. The flow meter of claim 1 wherein said single crystal-silicon layer is in a Simox wafer.

8. The flow meter of claim 1 wherein said single crystal-silicon layer is in a silicon-on-insulator wafer.

9. The flow meter of claim 1 wherein rounded corners join said torsion bars to said support.

10. The flow meter of claim 1 wherein rounded corners join said torsion bars to said vane.

11. The flow meter of claim 1 wherein said torsion bars have a surface layer of silicon carbide or silicon nitride formed thereon.

12. The flow meter of claim 1 wherein said support is frame-shaped and encircles said vane.

13. The flow meter of claim 1 wherein the vane is substantially thinner than the support.

14. The flow meter of claim 1 wherein mass around the center of said vane is mostly etched away.

15. The flow meter of claim 1 wherein mass around the center of said vane is completely etched away whereby said vane has a frame-shape.