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Semiconductor device and method for its preparation

  • US 5,895,933 A
  • Filed: 06/03/1997
  • Issued: 04/20/1999
  • Est. Priority Date: 06/25/1993
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å

    ,wherein one or more elements selected from the group consisting of Group VIII, IIIb. IVb and Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is 0.67 or higher.

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