Semiconductor device and method for its preparation
First Claim
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1. A semiconductor device comprising:
- a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
,wherein one or more elements selected from the group consisting of Group VIII, IIIb. IVb and Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is 0.67 or higher.
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Abstract
A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
,wherein one or more elements selected from the group consisting of Group VIII, IIIb. IVb and Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is 0.67 or higher. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
,wherein one or more elements selected from the group consisting of Group VIII, IIIb, IVb and Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is approximately 1.0. - View Dependent Claims (6, 7, 8, 9)
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10. A semiconductor device comprising:
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a channel region comprising a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
;source and drain regions between which said channel region is disposed; and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween, wherein one or more elements selected from the group consisting of Group VIII, IlIb, IVb, Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is not lower than 0.33. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor device comprising:
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a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
; andone or more elements selected from the group consisting of Group VIII, IIIb, IVb and Vb elements used in the semiconductor film for the crystallization of the semiconductor film.
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16. A semiconductor device comprising:
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a channel region comprising a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
;source and drain regions between which said channel region is disposed; and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween, wherein one or more elements selected from the group consisting of Group VIII, IIIb, IVb and Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is 0.67 or higher. - View Dependent Claims (17)
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18. A semiconductor device comprising:
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a channel region comprising a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 Å
;source and drain regions between which said channel region is disposed; and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween, wherein a catalyst element selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb is used in the semiconductor film for the crystallization of the semiconductor film. - View Dependent Claims (19)
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Specification