MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch

• US 5,895,955 A
• Filed: 01/10/1997
• Issued: 04/20/1999
• Est. Priority Date: 01/10/1997
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Gardner, Mark I., Fulford, H. Jim Jr., Hause, Fred N.
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US08/781,451
• Time in Patent Office: 830 Days
• Field of Search: 257/336, 257/344, 257/401, 257/408, 438/163, 438/184, 438/230, 438/514, 438/694
• US Class Current: 257/336
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

A transistor and transistor fabrication method are presented where a sequence of layers are formed and either entirely or partially removed upon sidewall surfaces of a gate conductor. The formation and removal of layers produces a series of laterally spaced surfaces to which various implants can be aligned. Those implants, placed in succession produce a highly graded junction having a relatively smooth doping profile. The multilayer spacer structure comprises a polysilicon spacer interposed between a grown oxide and an etch stop. The polysilicon spacer is formed by an anisotropic etch, and the pre-existing etch stop prevents the anisotropic etch from damaging the source/drain and gate conductor regions beneath the etch stop. Further, the etch stop allows removal of the overlying oxide as well as the entire polysilicon during times when the multi-layer spacer is entirely removed. Removal of the various layers does not damage the underlying substrate due to the presence of the etch stop. The etch stop preferably comprises a nitride layer overlying an oxide layer, wherein the oxide layer can either be deposited or grown.

Claims

1. A method for forming a transistor, comprising:

providing a gate dielectric layer interposed between a semiconductor substrate and a layer of polysilicon;

removing select regions of said layer of polysilicon and said gate dielectric to create a gate conductor dielectrically spaced upon said semiconductor substrate between openings to said semiconductor substrate;

forming a dual layer etch stop upon the gate conductor and the semiconductor substrate within said openings;

depositing a layer of spacer material across the entire said etch stop; and

while retaining said dual layer etch stop, removing the layer of spacer material along substantially horizontal surfaces faster than substantially vertical surfaces to create a spacer which abuts with a region of said etch stop proximate to a pair of opposed sidewall surfaces of said gate conductor.

2. The method as recited in claim 1, wherein said removing comprises etching the layer of spacer material at a substantially faster rate than an upper layer of said dual layer etch stop.

3. The method as recited in claim 2, wherein the upper layer comprises nitride residing upon a lower layer of said dual layer etch stop.

4. The method as recited in claim 3, wherein the lower layer comprises oxide.

5. The method as recited in claim 1, wherein said forming the dual layer etch stop comprises:

depositing, to a first thickness, a layer of oxide upon the gate conductor and the semiconductor substrate within said openings; and

depositing a layer of nitride upon the layer of oxide to a second thickness approximately twice the first thickness.

6. The method as recited in claim 5, wherein said first thickness is in the range of approximately 100 to 200 angstroms.

7. The method as recited in claim 5, wherein said second thickness is in the range of approximately 200 to 400 angstroms.

8. The method as recited in claim 1, wherein said forming the dual layer etch stop comprises:

growing, to a first thickness, a layer of oxide upon the gate conductor and the semiconductor substrate within said openings; and

depositing a layer of nitride upon the layer of oxide to a second thickness approximately twice the first thickness.

9. The method as recited in claim 8, wherein said first thickness is in the range of approximately 100 to 200 angstroms.

10. The method as recited in claim 8, wherein said second thickness is in the range of approximately 200 to 400 angstroms.

11. The method as recited in claim 1, further comprising:

implanting a first concentration of dopants into said semiconductor substrate prior to the step of forming a dual layer etch stop; and

implanting a second concentration of dopants greater than the first concentration into said semiconductor substrate after the step of removing the layer of spacer material.

12. The method as recited in claim 11, wherein implanting the first concentration of dopants comprises using the gate conductor as a mask against implant of said first concentration of dopants.

13. The method as recited in claim 11, wherein implanting the second concentration of dopants comprises using the gate conductor and the spacer as a mask against implant of said second concentration of dopants.

14. The method as recited in claim 1, further comprising:

while using the spacer and the gate conductor as a mask implanting a relatively heavy concentration of dopants into the semiconductor substrate;

removing said spacer from said etch stop;

removing said etch stop from said gate conductor and said semiconductor substrate; and

while using only the gate conductor as a mask implanting a relatively light concentration of dopants into the semiconductor substrate.

15. An integrated circuit, comprising:

a transistor gate conductor dielectrically spaced above a semiconductor substrate;

a dielectric etch stop structure comprising a substantially vertical portion and a substantially horizontal portion, wherein said substantially vertical portion extends along a sidewall surface of said gate conductor and said substantially horizontal portion extends along an upper surface of said semiconductor substrate outward from said sidewall surface; and

a pair of spacer structures, each arranged adjacent an exposed vertical sidewall of said vertical portion and upon an exposed upper surface of said horizontal portion, wherein each spacer structure comprises a polysilicon portion and an oxide portion, and wherein an upper surface of said spacer structure is at a higher elevation level than an upper surface of said gate conductor.

16. The integrated circuit as recited in claim 15, wherein said gate conductor comprises polysilicon.

17. The integrated circuit as recited in claim 15, wherein said etch stop structure comprises a silicon nitride layer.

18. The integrated circuit as recited in claim 17, wherein said etch stop structure further comprises a silicon dioxide layer, and wherein said silicon nitride layer is arranged adjacent an exposed lateral surface of and upon an exposed upper surface of said silicon dioxide layer.

19. The integrated circuit as recited in claim 15, wherein said oxide portion is adjacent an exposed lateral surface of said polysilicon portion.

20. The integrated circuit as recited in claim 15, further comprising impurity distributions within said semiconductor substrate, laterally disposed on either side of said gate conductor and self-aligned to said sidewall surfaces of said gate conductor.

21. The integrated circuit as recited in claim 15, further comprising impurity distributions within said semiconductor substrate, laterally disposed on either side of said gate conductor and self-aligned to exposed lateral surfaces of said spacer structures.

22. The integrated circuit as recited in claim 15, further comprising impurity distributions within said semiconductor substrate, laterally disposed on either side of said gate conductor and self-aligned to surfaces existing between said exposed lateral surfaces of said spacer structures and said sidewall surfaces of said gate conductor.

23. The integrated circuit as recited in claim 22, wherein said surfaces existing between comprise substantially vertical interfaces between said etch stop and said polysilicon portion.

24. The integrated circuit as recited in claim 22, wherein said surfaces existing between comprise substantially vertical interfaces between said polysilicon portion and said oxide portion.