Input protection circuit for use in semiconductor device having an improved electrostatic breakdown voltage

• US 5,895,958 A
• Filed: 06/24/1996
• Issued: 04/20/1999
• Est. Priority Date: 06/22/1995
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Miki, Atsunori
• Primary Examiner(s): Tran, Minh-Loan
• Assistant Examiner(s): Abraham, Fetsum
• Application Number:
  US08/668,908
• Time in Patent Office: 1,030 Days
• Field of Search: 257/355, 257/356, 257/357, 257/358, 257/359, 257/361, 257/363, 361/90, 361/94, 361/101, 361/196, 361/207
• US Class Current: 257/355
• CPC Class Codes: H01L 27/0251 for MOS devices

Abstract

In an input protection circuit, a bipolar protection device is constituted of a semiconductor substrate of a first conductivity type, a first diffused layer of a second conductivity type formed in the substrate and connected to an input signal pad, a second diffused layer of the second conductivity type formed in the substrate to extend in parallel to the first diffused layer but separately from the first diffused layer by a first space, and a third diffused layer of a high impurity concentration and of the first conductivity type formed in the first space in the substrate to extend in parallel to the first and second diffused layers, in junction with the second diffused layer but separately from the first diffused layer. When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized. Thus, increase of a leakage current caused because hot carriers generated by application of an overvoltage were injected into a field oxide film, can be prevented.

Claims

1. An input protection circuit for use in a semiconductor device, comprising:

an input signal pad selectively coated on an interlayer insulator film formed above a semiconductor substrate of a first conductivity type;

a bipolar protection device constituted of;

a first diffused layer of a second conductivity type opposite to said first conductivity type, said first diffused layer being connected to said input signal pad and formed selectively at a surface portion of said semiconductor substrate;

a second diffused layer of said second conductivity type formed at said surface portion of said semiconductor substrate, to extend in parallel to said first diffused layer but separated from said first diffused layer by a first space;

a third diffused layer of said first conductivity type formed in said semiconductor substrate in said first space to extend in parallel to said first and second diffused layers, in junction with said second diffused layer but separately from said first diffused layer, said third diffused layer having an impurity concentration higher than that of said surface portion of said semiconductor substrate,

wherein said third diffused layer extends to cover a bottom and a side of said second diffused layer; and

a power supply line connected to said second diffused layer; and

an input protection resistor having a first terminal connected to said input signal pad and a second terminal connected to an input signal internal wiring conductor.

2. An input protection circuit claimed in claim 1, wherein said input signal pad has at least one linear sides, and said first diffused layer is formed along said one side of said input signal pad, substantially over a full length of said side.

3. An input protection circuit claimed in claim 1 wherein said input signal pad has at least two linear sides, and said first diffused layer is formed along said two sides of said input signal pad containing therebetween a corner of said pad, substantially over a full length of each of said two sides.

4. An input protection circuit claimed in claim 1 further including a further protection device which includes a gate electrode coated over a gate oxide film on said surface of said semiconductor substrate, a drain region of said second conductivity type formed selectively on said surface of said semiconductor substrate and connected to said input signal internal wiring conductor, and a source region of said second conductivity type connected to said gate electrode.

5. An input protection circuit claimed in claim 1 wherein said input protection resistor is formed of a diffused resistor.

6. An input protection circuit for use in a semiconductor device, comprising:

an input signal pad selectively coated on an interlayer insulator film formed above a semiconductor substrate of a first conductivity type;

a bipolar protection device constituted of;

a first diffused layer of a second conductivity type opposite to said first conductivity type, said first diffused layer being connected to said input signal pad and formed selectively at a surface portion of said semiconductor substrate;

a second diffused layer of said second conductivity type formed at said surface portion of said semiconductor substrate, to extend in parallel to said first diffused layer but separated from said first diffused layer by a first space;

a third diffused layer of said first conductivity type formed in said semiconductor substrate in said first space to extend in parallel to said first and second diffused layers, in junction with said second diffused layer but separated from said first diffused layer, said third diffused layer having an impurity concentration higher than that of said surface portion of said semiconductor substrate, wherein said third diffused layer of each of said first named bipolar protection device and said second bipolar protection device extends to cover a bottom and a side of said second diffused layer; and

a power supply line connected to said second diffused layer; and

an input protection resistor having a first terminal connected to said input signal pad and a second terminal connected to an input signal internal wiring conductor,

wherein said bipolar protection device is connected between said input signal pad and a power supply line, and a second bipolar protection device having the same structure as that of said bipolar protection device, is connected between said input signal pad and a ground line.

7. An input protection circuit claimed in claim 6 wherein said input signal pad is rectangular and said first diffused layer of said first named bipolar protection device is formed along a first side of the rectangle of said input signal pad substantially over a fall length of said first side, and said first diffused layer of said second bipolar protection device is formed along a second side of the rectangle of said input signal pad opposite to said first side of the rectangle substantially over a full length of said second side.

8. An input protection circuit claimed in claim 6 wherein said input signal pad is rectangular, and said first diffused layer of said first named bipolar protection device is formed along first and second sides of the rectangle of said input signal pad containing therebetween a first corner thereof, substantially over a full length of each of said first and second sides, and said first diffused layer of said second bipolar protection device is formed along third and fourth sides of said input signal pad, containing therebetween a second corner thereof diagonal to said first corner substantially over a full length of each of said third and fourth sides.