Semiconductor memory system using a clock-synchronous semiconductor device and semiconductor memory device for use in the same

• US 5,896,347 A
• Filed: 09/08/1997
• Issued: 04/20/1999
• Est. Priority Date: 12/27/1996
• Status: Expired due to Term

• Current Assignee: Socionext Inc.
• Original Assignee: Fujitsu Limited
• Inventors: Tomita, Hiroyoshi, Takemae, Yoshihiro
• Primary Examiner(s): Hoang, Huan
• Application Number:
  US08/925,458
• Time in Patent Office: 589 Days
• Field of Search: 365/233, 365/230.03, 365/189.05, 365/194
• US Class Current: 365/233.11
• CPC Class Codes: G11C 7/1051 Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
• CPC Class Codes: G11C 7/1057 Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
• CPC Class Codes: G11C 7/1066 Output synchronization
• CPC Class Codes: G11C 7/1072 for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
• CPC Class Codes: G11C 7/1078 Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
• CPC Class Codes: G11C 7/1093 Input synchronization
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
• CPC Class Codes: G11C 7/222 Clock generating, synchronizing or distributing circuits within memory device

Abstract

A semiconductor memory system using a synchronous memory and operating at a higher speed due to a reduced margin required when reading data from the SDRAM, and a semiconductor memory device for achieving the same are disclosed. The semiconductor memory system comprises at least one semiconductor memory device and a control device for performing data input/output to and from the semiconductor memory device, wherein the control device outputs data to be stored in the semiconductor memory device, synchronously with a first synchronizing signal that the control device outputs, and the semiconductor memory device delivers output data therefrom synchronously with a second synchronizing signal that the semiconductor memory device outputs. In the thus constructed semiconductor memory system, the semiconductor memory device incorporates an output phase shift circuit which introduces a prescribed phase angle between the output data and second synchronizing signal, and provisions are made so that at the semiconductor memory device side the output data and the second synchronizing signal are controlled precisely at the prescribed phase angle with respect to each other, and so that a latch pulse can be immediately generated at the controller side upon reception of a data strobe signal.

Claims

1. A semiconductor memory system comprising:

at least one semiconductor memory device; and

a control device for inputting and outputting data from and to said semiconductor memory device,

said control device outputting the data to said semiconductor memory device, synchronously with a first synchronizing signal that said control device outputs,

said semiconductor memory device outputting the data to said control device synchronously with a second synchronizing signal that said semiconductor memory device outputs, and

said semiconductor memory device including an output phase shift circuit for keeping a prescribed phase angle between the data from the semiconductor memory device and said second synchronizing signal.

2. A semiconductor memory system according to claim 1, wherein said second synchronizing signal is a signal with a 50% duty cycle.

3. A semiconductor memory system according to claim 2, wherein said semiconductor memory device delivers the data twice during one cycle of said second synchronizing signal.

4. A semiconductor memory system according to claim 3, wherein said second synchronizing signal is shifted in phase with respect to the data from the semiconductor memory device by 90 degrees and 270 degrees, respectively.

5. A semiconductor memory system according to claim 1, wherein said output phase shift circuit is capable of adjusting the phase difference between the data from the semiconductor memory device and said second synchronizing signal among a plurality of set values.

6. A semiconductor memory system according to claim 5, wherein the phase difference between data from the semiconductor memory device and said second synchronizing signal can be set from said control device.

7. A semiconductor memory system according to claim 6, wherein said control device, in accordance with said second synchronizing signal latched therein, immediately issues a request to set said prescribed phase angle in such a manner as to be suitable for latching the data from said semiconductor memory device.

8. A semiconductor memory system according to claim 6, wherein

said semiconductor memory device includes a mode register for storing a plurality of control values corresponding to the plurality of phase difference values defining the phase difference between the data from the semiconductor memory device and said second synchronizing signal, and for selecting and outputting one of said control values in accordance with a command signal from said control device, and

said output phase shift circuit adjusts the phase difference between the data from the semiconductor memory device and said second synchronizing signal, based on said control value output from said mode register.

9. A semiconductor memory system according to claim 1, wherein said semiconductor memory device includes

a basic second synchronizing signal generating circuit for generating a basic second synchronizing signal which is used to generate said second synchronizing signal from said first synchronizing signal latched therein, and

a data output circuit for delivering the data synchronously with said basic second synchronizing signal, and wherein

said output phase shift circuit delays said basic second synchronizing signal by said prescribed angle.

10. A semiconductor memory system according to claim 9, wherein said semiconductor memory device includes an external synchronizing phase adjusting circuit for adjusting the phase of said latched first synchronizing signal so that said latched first synchronizing signal is in phase with said first synchronizing signal.

11. A semiconductor memory system according to claim 9, wherein said semiconductor memory device includes a phase shift/basic second synchronizing signal generating circuit integrating said basic second synchronizing signal generating circuit with said output phase shift circuit.

12. A semiconductor memory device, comprising:

a data output circuit for outputting data synchronously with a basic output synchronizing signal;

an output phase shift circuit for generating a shifted output synchronizing signal having a prescribed phase angle against said basic output synchronizing signal; and

an output synchronizing signal output circuit for outputting said shifted output synchronizing signal.

13. A semiconductor memory device according to claim 12, wherein said output synchronizing signal is a signal with a 50% duty cycle.

14. A semiconductor memory device according to claim 13, wherein said semiconductor memory device delivers output data twice during one cycle of said output synchronizing signal.

15. A semiconductor memory device according to claim 14, wherein said output synchronizing signal is shifted in phase with respect to said output data by 90 degrees and 270 degrees, respectively.

16. A semiconductor memory device according to claim 12, wherein said output phase shift circuit is capable of adjusting the phase difference between said output data and said output synchronizing signal among a plurality of set values.

17. A semiconductor memory device according to claim 16, wherein the phase difference between said output data and said output synchronizing signal can be set externally.

18. A semiconductor memory device according to claim 17, including

a mode register for storing a plurality of control values corresponding to the plurality of phase difference values defining the phase difference between said output data and said output synchronizing signal, and for selecting and outputting one of said control values in accordance with a command signal from said control device, wherein

said output phase shift circuit adjusts the phase difference between said output data and said output synchronizing signal, based on said control value output from said mode register.

19. A semiconductor memory device according to claim 12, including

a basic output synchronizing signal generating circuit for generating a basic output synchronizing signal which is used to generate said output synchronizing signal from an externally input synchronizing signal latched therein, wherein

said data output circuit delivers said output data synchronously with said basic output synchronizing signal,

said output phase shift circuit delays said basic output synchronizing signal by said prescribed angle, and

said output synchronizing signal output circuit outputs said output synchronizing signal synchronously with said basic output synchronizing signal delayed through said output phase shift circuit.

20. A semiconductor memory device according to claim 19, including an external synchronizing phase adjusting circuit for adjusting the phase of said latched externally input synchronizing signal so that said latched externally input synchronizing signal is in phase with said output synchronizing signal.

21. A semiconductor memory device according to claim 19, including a phase shift/basic output synchronizing signal generating circuit integrating said basic output synchronizing signal generating circuit with said output phase shift circuit.