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Diffusion bonded interconnect

  • US 5,897,341 A
  • Filed: 07/02/1998
  • Issued: 04/27/1999
  • Est. Priority Date: 07/02/1998
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • providing a component having an aluminum bonding pad;

    providing a substrate having a bonding pad;

    forming a layer comprising Cadmium over the substrate bonding pad;

    aligning the component aluminum bonding pad to the substrate bonding pad;

    bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

    forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

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