Diffusion bonded interconnect

• US 5,897,341 A
• Filed: 07/02/1998
• Issued: 04/27/1999
• Est. Priority Date: 07/02/1998
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Love, David G., Moresco, Larry L.
• Primary Examiner(s): Picardat, Kevin M.
• Assistant Examiner(s): COLLINS, DEVEN M
• Application Number:
  US09/109,655
• Time in Patent Office: 299 Days
• Field of Search: 438/125, 438/118, 438/106
• US Class Current: 438/125
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2224/8183 Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/8383 Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/85205 Ultrasonic bonding
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/0103 Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/0105 Tin [Sn]
• CPC Class Codes: H01L 2924/01052 Tellurium [Te]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: Y10T 428/24066 : Wood grain
• CPC Class Codes: Y10T 428/24165 : Hexagonally shaped cavities

Abstract

A method of interconnecting integrated circuit chips to a substrate during the assembly of a multi-chip module. Instead of forming an electrical and physical bond by reflowing solder bumps attached to the pads of the chips and the substrate, as in flip-chip bonding, thin pads of specially selected dissimilar metals placed on the chips and substrate are connected by a solid-state diffusion bonding process. In one embodiment, the I/O pads on a chip are formed from aluminum or an aluminum alloy and are aligned and placed into physical contact with corresponding metal pads or metal layered pads on a substrate, where the metal is capable of being diffusion bonded to aluminum. The combination of chip(s) and substrate are then heated in a controlled atmosphere at a temperature and for a time sufficient to cause solid-state diffusion bonding to occur.

Claims

1. A method of fabricating a semiconductor device, comprising:

providing a component having an aluminum bonding pad;

providing a substrate having a bonding pad;

forming a layer comprising Cadmium over the substrate bonding pad;

aligning the component aluminum bonding pad to the substrate bonding pad;

bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

2. The method of claim 1, wherein the step of aligning the component aluminum bonding pad to the substrate bonding pad further comprises:

interposing a split-field viewer between the component and the substrate; and

using the split-field viewer to align the component aluminum bonding pad to the substrate bonding pad.

3. The method of claim 1, wherein the step of forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad further comprises:

heating the physically contacted component bonding pad and substrate bonding pad at a temperature substantially between 100 and 150 degrees centigrade for a sufficient period of time to form a solid-state diffusion bond.

4. The method of claim 1, wherein the component is an integrated circuit chip.

25. The method of claim 3, wherein the step of heating the physically contacted component bonding pad and substrate bonding pad further comprises:

heating the physically contacted pads for a period of time between approximately 30 minutes and one hour.

5. A method of fabricating a semiconductor device, comprising:

providing a component having an aluminum bonding pad;

providing a substrate having a bonding pad;

forming a layer comprising Gallium over the substrate bonding pad;

aligning the component aluminum bonding pad to the substrate bonding pad;

bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

6. The method of claim 5, wherein the step of aligning the component aluminum bonding pad to the substrate bonding pad further comprises:

interposing a split-field viewer between the component and the substrate; and

using the split-field viewer to align the component aluminum bonding pad to the substrate bonding pad.

7. The method of claim 5, wherein the step of forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad further comprises:

heating the physically contacted component bonding pad and substrate bonding pad at a temperature substantially between 100 and 150 degrees centigrade for a sufficient period of time to form a solid-state diffusion bond.

8. The method of claim 5, wherein the component is an integrated circuit chip.

26. The method of claim 7, wherein the step of heating the physically contacted component bonding pad and substrate bonding pad further comprises:

heating the physically contacted pads for a period of time between approximately 30 minutes and one hour.

9. A method of fabricating a semiconductor device, comprising:

providing a component having an aluminum bonding pad;

providing a substrate having a bonding pad;

forming a layer comprising Nickel over the substrate bonding pad;

aligning the component aluminum bonding pad to the substrate bonding pad;

bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

10. The method of claim 9, wherein the step of aligning the component aluminum bonding pad to the substrate bonding pad further comprises:

interposing a split-field viewer between the component and the substrate; and

using the split-field viewer to align the component aluminum bonding pad to the substrate bonding pad.

11. The method of claim 9, wherein the step of forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad further comprises:

heating the physically contacted component bonding pad and substrate bonding pad at a temperature substantially between 100 and 150 degree centigrade for a sufficient period of time to form a solid-state diffusion bond.

12. The method of claim 9, wherein the component is an integrated circuit chip.

27. The method of claim 11, wherein the step of heating the physically contacted component bonding pad and substrate bonding pad further comprises:

heating the physically contacted pads for a period of time between approximately 30 minutes and one hour.

13. A method of fabricating a semiconductor device, comprising:

providing a component having an aluminum bonding pad;

providing a substrate having a bonding pad;

forming a layer comprising Tin over the substrate bonding pad;

aligning the component aluminum bonding pad to the substrate bonding pad;

bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

14. The method of claim 13, wherein the step of aligning the component aluminum bonding pad to the substrate bonding pad further comprises:

interposing a split-field viewer between the component and the substrate; and

using the split-field viewer to align the component aluminum bonding pad to the substrate bonding pad.

15. The method of claim 13, wherein the step of forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad further comprises:

heating the physically contacted component bonding pad and substrate bonding pad at a temperature substantially between 100 and 150 degree centigrade for a sufficient period of time to form a solid-state diffusion bond.

16. The method of claim 13, wherein the component is an integrated circuit chip.

28. The method of claim 15, wherein the step of heating the physically contacted component bonding pad and substrate bonding pad further comprises:

heating the physically contacted pads for a period of time between approximately 30 minutes and one hour.

17. A method of fabricating a semiconductor device, comprising:

providing a component having an aluminum bonding pad;

providing a substrate having a bonding pad;

forming a layer comprising Zinc over the substrate bonding pad;

aligning the component aluminum bonding pad to the substrate bonding pad;

bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

18. The method of claim 17, wherein the step of aligning the component aluminum bonding pad to the substrate bonding pad further comprises:

interposing a split-field viewer between the component and the substrate; and

using the split-field viewer to align the component aluminum bonding pad to the substrate bonding pad.

19. The method of claim 17, wherein the step of forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad further comprises:

heating the physically contacted component bonding pad and substrate bonding pad at a temperature substantially between 100 and 150 degree centigrade for a sufficient period of time to form a solid-state diffusion bond.

20. The method of claim 17, wherein the component is an integrated circuit chip.

29. The method of claim 19, wherein the step of heating the physically contacted component bonding pad and substrate bonding pad further comprises:

heating the physically contacted pads for a period of time between approximately 30 minutes and one hour.

21. A method of fabricating a semiconductor device, comprising:

providing a component having an aluminum bonding pad;

providing a substrate having a bonding pad;

forming a layer comprising an element selected from the group consisting of Cadmium, Gallium, Nickel, Tin, and Zinc over the substrate bonding pad;

aligning the component aluminum bonding pad to the substrate bonding pad;

bringing the component aluminum bonding pad into physical contact with the substrate bonding pad; and

forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad.

22. The method of claim 21, wherein the step of aligning the component aluminum bonding pad to the substrate bonding pad further comprises:

interposing a split-field viewer between the component and the substrate; and

using the split-field viewer to align the component aluminum bonding pad to the substrate bonding pad.

23. The method of claim 21, wherein the step of forming a solid-state diffusion bond between the component aluminum bonding pad and the substrate bonding pad further comprises:

heating the physically contacted component bonding pad and substrate bonding pad at a temperature substantially between 100 and 150 degree centigrade for a sufficient period of time to form a solid-state diffusion bond.

24. The method of claim 21, wherein the component is an integrated circuit chip.

30. The method of claim 23, wherein the step of heating the physically contacted component bonding pad and substrate bonding pad further comprises:

heating the physically contacted pads for a period of time between approximately 30 minutes and one hour.