Method of forming dielectric film of semiconductor memory device

• US 5,897,353 A
• Filed: 11/03/1997
• Issued: 04/27/1999
• Est. Priority Date: 12/24/1996
• Status: Expired due to Term

• Current Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Kim, Moon Hwan, Eom, Yong Taek
• Primary Examiner(s): Booth, Richard A.
• Application Number:
  US08/963,351
• Time in Patent Office: 540 Days
• Field of Search: 438/257-267, 438/704
• US Class Current: 438/261
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence

Abstract

A method of forming a stable type of dielectric film of flash EEPROM by preventing forming of unusual type of oxide film. The method of manufacturing dielectric film comprising the steps of: forming a first polysilicon film, a first dielectric film and a second polysilicon film on the active region of a semiconductor substrate sequentially; patterning said second polysilicon film, the first dielectric film and the first polysilicon film in the same size respectively; forming a curved surface on the side wall of the first dielectric film using wet etching technique in order to accelerate the growth of second dielectric film on the side wall of the first polysilicon film during the subsequent oxidation process; and forming the second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film using thermal oxidation process.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a first polysilicon film, a first dielectric film, and a second polysilicon film on the active region of a semiconductor substrate sequentially;

patterning the second polysilicon film, the first dielectric film, and first polysilicon film so that the sidewalls are aligned to one another;

forming a rounded surface on the side wall of the first dielectric film through the process of wet etching in order to accelerate the growth of a second dielectric film on the side wall of the first polysilicon film in a subsequent thermal oxidation process;

forming said second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film through said thermal oxidation process.

2. The method of claim 1, wherein said second dielectric film at the edges of the first polysilicon film is rounded through a thermal oxidation process in order to form the second dielectric film.

3. The method of claim 1, wherein the first dielectric film is an ONO (oxide/nitride/oxide) film.

4. The method of claim 3, wherein the rounded surface is formed on the nitride film while wet etching the first dielectric film.

5. The method of claim 4, wherein a solution of phosphoric acid is used in wet etching.

6. The method of claim 3, wherein the rounded surface is formed on the oxide film while wet etching the first dielectric film.

7. The method of claim 6, wherein a BOE (buffered oxide etchant) is used in wet etching.

8. The method of claim 4, wherein 100-500 Å

of the nitride film is removed while wet etching in order to form the rounded surface.