Manufacturing method of semiconductor integrated circuit

• US 5,897,360 A
• Filed: 10/17/1997
• Issued: 04/27/1999
• Est. Priority Date: 10/21/1996
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Kawaguchi, Hiroshi
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US08/953,240
• Time in Patent Office: 557 Days
• Field of Search: 438/424, 438/429, 438/430, 438/431, 148/DIG. 50
• US Class Current: 438/431
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
• CPC Class Codes: H01L 21/76232 of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls H01L21/76229 takes precedence
• CPC Class Codes: Y10S 148/05 Etch and refill

Abstract

A manufacturing method of a semiconductor integrated circuit utilizing a trench isolated region to control the occurrence of parasitic transistors without narrowing the element region by forming first and second openings 4A, 4B on a silicon substrate for the purpose of element isolation, forming an amorphous silicon film thereon, then leaving the amorphous silicon film behind only a surface of a side wall of the opening by performing anisotropy etching. After oxidizing the surface of the amorphous silicon film and inside base, the opening is filled with a silicon oxide film.

Claims

1. A manufacturing method of a semiconductor integrated circuit comprising the steps of:

forming a first silicon oxide film and a silicon nitride film on one main surface of a semiconductor substrate in order;

forming an opening for use in element isolation by causing said silicon nitride film, said first silicon oxide film, and said semiconductor substrate being subjected to anisotropic etching;

leaving amorphous silicon film contacting said semiconductor substrate only on a side wall of said opening by causing amorphous silicon film to be first formed on the whole surface of the opening and second to be subjected to the anisotropic etching;

forming a second silicon oxide film on the surface of said amorphous silicon film of said side wall and on the inside base of said opening to be exposed to oxidized atmosphere, said second silicon oxide film contacting said first silicon oxide film;

filling said opening section by forming a third silicon oxide film at a whole surface thereof including the surface of said second silicon oxide film;

exposing the surface of said silicon nitride film by removing said third silicon oxide film using either anisotropic etching or grinding; and

removing exposed said silicon nitride film.

2. A manufacturing method of a semiconductor integrated circuit as claimed in claim 1, wherein the step of leaving amorphous film contacting said semiconductor side wall by subjecting the amorphous silicon film formed on the whole surface of the opening to anisotropic etching, further comprises the step of etching the amorphous silicon film so that an upper end of the amorphous silicon film agrees with a top edge of the silicon substrate.

3. A manufacturing method of a semiconductor integrated circuit as claimed in claim 1, wherein film thickness of said amorphous silicon film is approximately 10 to approximately 50 nm.

4. A manufacturing method of a semiconductor integrated circuit as claimed in claim 2, wherein film thickness of said amorphous silicon film is approximately 10 to approximately 50 nm.

5. A manufacturing method of a semiconductor integrated circuit comprising the steps of:

forming a first silicon oxide film and a silicon nitride film on one main surface of a semiconductor substrate in order;

forming an opening for use in element isolation by causing said silicon nitride film, said first silicon oxide film, and said semiconductor substrate to be subjected to anisotropy etching;

forming selectively a silicon film on exposed surface of a silicon of said opening;

forming a second silicon oxide film causing surface of said silicon film to be exposed to oxidized atmosphere to oxidize;

filling said opening by forming a third silicon oxide film at a whole surface thereof including the surface of said second silicon oxide film;

exposing the surface of said silicon nitride film by removing said third silicon oxide film using either an anisotropic etching method or a grinding method; and

removing exposed said silicon nitride film.

6. A manufacturing method of a semiconductor integrated circuit as claimed in claim 5, wherein film thickness of said silicon film is approximately 10 to approximately 50 nm.