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Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor manufacturing apparatus

  • US 5,897,378 A
  • Filed: 10/19/1998
  • Issued: 04/27/1999
  • Est. Priority Date: 05/17/1995
  • Status: Expired due to Fees
First Claim
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1. A method of monitoring a deposit in a chamber, comprising the steps of:

  • forming a part of the chamber with a window for electromagnetic wave permitting at least any one of electromagnetic waves including a light beam, an X-ray beam, and an electron beam to pass therethrough;

    introducing said electromagnetic wave into said chamber from an outside of said chamber through said window for electromagnetic wave;

    ejecting the electromagnetic wave passing through the deposit in said chamber from said chamber to the outside thereof; and

    measuring absorption of said ejected electromagnetic wave by said deposit to monitor a state of said deposit.

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