Method of fabricating boron containing coatings

• US 5,897,751 A
• Filed: 10/05/1996
• Issued: 04/27/1999
• Est. Priority Date: 03/11/1991
• Status: Expired due to Term

• Current Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Jankowski, Alan F., Makowiecki, Daniel M.
• Primary Examiner(s): NGUYEN, NAM X
• Application Number:
  US08/730,054
• Time in Patent Office: 934 Days
• Field of Search: 204/192.15, 204/192.16, 204/192.22, 204/192.26, 204/192.27
• US Class Current: 204/192.15
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C23C 14/0647 Boron nitride
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: G21K 2201/067 Construction details

Abstract

Hard coatings are fabricated from boron nitride, cubic boron nitride, and multilayer boron/cubic boron nitride, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron is formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/cubic boron nitride, is produced by depositing alternate layers of boron and cubic boron nitride, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be discrete or of a blended or graded composition.

Claims

1. A process for producing a thin film containing boron, comprising:

subjecting a substantially pure boron target having a density of about theoretical density to an rf magnetron sputtering process in an atmosphere selected from the group of inert and reactive gases; and

depositing a thin film containing boron on a surface.

2. The process of claim 1, wherein the atmosphere is composed of an inert gas selected from the group of argon, helium, neon, krypton, and xenon, and wherein the deposited thin film is composed of boron.

3. The process of claim 1, wherein the atmosphere is composed of a reactive gas selected from the group of nitrogen, ammonia, ammonia-nitrogen-argon, and mixtures of nitrogen and argon;

and

wherein the deposited thin film is composed of predominantly cubic boron nitride.

4. The process of claim 1, wherein the atmosphere is alternated between an inert gas and a reactive gas, and wherein the deposited thin film is composed of alternating layers of boron and boron nitride.

5. The process of claim 1, wherein the atmosphere is alternated between an inert gas and a reactive gas, and wherein the deposited thin film is composed of alternating layers of boron and predominantly cubic boron nitride.

6. The process of claim 5, wherein the alternating layers have a thickness in the range of 1 nanometer to 1 micrometer.

7. The process of claim 5, wherein the atmosphere is composed of about 5-100% of a reactive gas and about 95-0% of an inert gas, and wherein the deposited thin film is composed of alternating layers of a blended composition of boron and cubic boron nitride.

8. A method for forming a thin film of cubic boron nitride on a surface, comprising:

exposing a substantially pure boron target having a density of about theoretical density to an rf magnetron sputtering process in an atmosphere containing a reactive gas; and

depositing a thin film of cubic boron nitride on a surface.

9. The method of claim 8, wherein the reactive gas atmosphere is selected from the group consisting of nitrogen, ammonia, ammonianitrogen-argon, and nitrogen/argon mixtures.

10. The method of claim 9, wherein the reactive gas atmosphere is nitrogen.

11. The method of claim 8, wherein the atmosphere containing a reactive gas contains from 5-100% nitrogen gas.

12. A method for fabricating a thin film consisting of alternating layers of boron and boron nitride or boron and predominantly cubic boron nitride, comprising:

subjecting a substantially pure boron target having a density of about theoretical density to an rf magnetron sputtering process in an atmosphere selected from the group of inert and reactive gases, and alternated between an inert gas and a reactive gas, and

depositing a thin film of alternating layers of boron and either boron nitride or predominantly cubic boron nitride.

13. the method of claim 12, wherein the depositing is carried out so as to produce a thin film of alternating layers consisting of layers of boron and boron nitride.

14. The method of claim 12, wherein the depositing is carried out so as to produce a thin film of alternating layers of boron and predominantly cubic boron nitride.

15. The method of claim 12, additionally including utilizing an atmosphere of an inert gas selected from the group consisting of argon, helium, neon, kypton, and xenon, and wherein the thus deposited thin film consists of alternating layers of boron and boron nitride.

16. The method of claim 12, additionally including utilizing an atmosphere of a reactive gas selected from the group consisting of nitrogen, ammonia, ammonia-nitrogen-argon, and mixtures of nitrogen and argon;

and wherein the thus deposited thin film consists of alternating layers of boron and predominantly cubic boron nitride.

17. The method of claim 16, wherein the reactive gas atmosphere is composed of nitrogen.

18. The method of claim 16, wherein the reactive gas atmosphere contains from 5-100% nitrogen gas.

19. The method of claim 12, additionally including providing the atmosphere so as to be composed of about 5-100% of a reactive gas and about 95-0% of an inert gas, and wherein the depositing is carried out using alternating layers of a blended composition of boron and cubic boron nitride.

20. The method of claim 12, wherein the alternating layers consist of boron and predominantly cubic boron nitride, wherein the thin film of alternating layers is deposited to a thickness of about 1-10 μ

m, and wherein the alternating layers are produced by alternately rf magnetron sputtering of a single substantially pure boron target in an inert gas atmosphere composed of argon and then in a reactive gas atmosphere composed of nitrogen.