Wafer bias ring in a sustained self-sputtering reactor

• US 5,897,752 A
• Filed: 05/20/1997
• Issued: 04/27/1999
• Est. Priority Date: 05/20/1997
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hong, Liubo, Fu, Jianming, Forster, John
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US08/859,300
• Time in Patent Office: 707 Days
• Field of Search: 204/298.06, 204/298.08, 204/298.11, 204/298.14, 204/298.15, 204/298.16, 204/298.17, 204/298.18, 204/298.19, 204/192.12 , 204/192.15, 204/192.17, 204/192.3, 204/298.2
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: C23C 14/3457 using other particles than noble gas ions C23C14/0036, C23C14/46 take precedence
• CPC Class Codes: H01J 37/3405 Magnetron sputtering
• CPC Class Codes: H01J 37/3438 Electrodes other than cathode

Abstract

A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The method is particularly useful for sputtering copper. According to the invention, a bias ring arranged around the wafer and rising above it is electrically biased to control the plasma potential, and hence to control the energy and directionality of the ions being sputter deposited on the wafer. The bias ring can be either a separate biasing element which can be positioned at a selected height above the wafer or a clamping ring clamping the wafer to the pedestal but having a biasing surface electrically insulated from the wafer and the pedestal.

Claims

1. A sputtering chamber, comprising:

a vacuum chamber;

a target inside said chamber and comprising a material to be sputtered;

an electrically conductive pedestal for holding a substrate to be sputter deposited with said material;

a magnet assembly disposed on a side of said target opposite said pedestal;

a first power supply biasing said target with respect to a fixed potential on said pedestal;

an electrically conductive bias ring surrounding an outside of said pedestal and rising above said pedestal towards said target, wherein said bias ring is adapted to clamp said substrate to said pedestal while remaining electrically isolated from said substrate and said pedestal; and

a second power supply biasing said bias ring with respect to said pedestal.

2. The sputtering chamber of claim 1, wherein said material of said target to be sputter deposited comprises copper.

3. The sputtering chamber of claim 1, wherein said bias ring is made of copper.

4. The sputtering chamber of claim 1, wherein said first power supply sufficiently biases said target to cause ions of said material sputtered from said target to sustain a plasma in a region of said chamber adjacent to said magnet assembly.

5. A sustained self-sputtering reactor comprising:

a vacuum chamber;

a target of a material to be sputter deposited;

a pedestal for holding a substrate;

a magnetron assembly disposed on a back side of said target;

a first DC power supply connected between said target and said pedestal and capable of generating a sustained self-sputtering plasma comprising ions of said material in a vicinity of said target adjacent to said magnetron assembly;

a bias ring disposed around said pedestal and rising above said substrate only part ways towards said target; and

a second DC power supply connected to said bias ring and biasing it relative to said pedestal;

wherein said bias ring additionally acts as a clamp ring for clamping said substrate to said pedestal without said substrate being biased by said second DC power supply.

6. The reactor of claim 5, wherein said material comprises copper.

7. A sustained self-sputtering reactor, comprising:

a vacuum chamber;

a target of a material to be sputter deposited;

a pedestal for holding a substrate;

a magnetron assembly disposed on a back side of said target;

a first DC power supply connected between said target and said pedestal and capable of generating a sustained self-sputtering plasma comprising ions of said material in a vicinity of said target adjacent to said magnetron assembly;

a bias ring disposed around said pedestal and rising above said substrate towards said target, wherein said bias ring additionally acts as a clamp ring for clamping said substrate to said pedestal; and

a second DC power supply connected to said bias ring and biasing it relative to said pedestal;

wherein said clamp ring comprises an insulating portion facing said substrate and said pedestal and a conductive portion connected to said second DC power supply.

8. A method of sputtering depositing, comprising:

supporting a substrate on an electrically conductive pedestal within a vacuum chamber;

clamping said substrate to said pedestal with a conductive ring, said conductive ring disposed on a periphery of said pedestal and rising above said substrate and having an insulating portion facing said pedestal and said substrate so as to be electrically insulated therefrom;

admitting a working gas into said chamber;

biasing with respect to said pedestal a sputtering target facing said pedestal and comprising a material to ignite said working gas into a plasma, a magnet assembly being located on a backside of said target;

then decreasing a supply of said working gas into said chamber while continuing to bias said sputtering target sufficient to cause ions of said material to sustain a plasma in a region adjacent to said magnetron; and

while said plasma is sustained, biasing said conductive ring with respect to said pedestal.

9. A method of sustained self-sputtering, comprising the steps of:

supporting a substrate on a pedestal within a vacuum chamber;

creating a magnetic field in a region adjacent to a face of a target facing an interior of said chamber, said face of said target comprising a material to be sputtered;

a first step of biasing said target to cause sustained self-sputtering of said material from said target;

a second step of biasing one or more electrically conductive members placed around said substrate and rising above a surface of said substrate towards said target, to thereby control ions of said material incident upon said substrate from a plasma existing between said target and said substrate; and

clamping said substrate to said pedestal with said one or more members without thereby biasing said substrate from said second biasing step.

10. The method of claim 9, wherein said material to be sputtered comprises copper.