Array of optical integrated devices with micro-lenses
First Claim
1. An optical integrated device for arraying with at least one other optical integrated apparatus having a first height, said device comprising:
- (i) a semiconductor substrate including first and second sides;
(ii) a substrate-side electrode which is formed on the first side of the semiconductor substrate;
(iii) a micro-lens layer which is epitaxially grown on a whole area of the second side of the substrate, the second side having a substantially smooth, hemispherically etched surface formed by a melt-back etching technique, said substantially smooth surface allowing a proper focusing of light;
(iv) epitaxial layers which are epitaxially grown on a whole area of the micro-lens layer, said epitaxial layers defining a predetermined ridge height substantially even with said first height;
(v) a dielectric film which is formed on the epitaxial layers; and
(vi) an epilayer-side electrode which is formed on a whole area of the dielectric film, whereby said predetermined ridge height is substantially even with said first height of said other apparatus enables arraying of said device and said apparatus.
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Abstract
An optical integrated device having an even height such that it can be easily arrayed or integrated with other devices in a single substrate. The device includes a semi-conductor substrate having a substrate-side electrode which is formed on one side of the semi-conductor substrate. A micro-lens layer is epitaxially grown on the opposite side to where the substrate-side electrode is formed. The opposite side also has a hemispherically etched surface. The device also includes epitaxial layers which are grown on a whole area on the micro lens layer and a dielectric film which is formed on the epitaxial layers. Additionally, an epilayer-side electrode is formed on a whole area of the dielectric film.
12 Citations
1 Claim
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1. An optical integrated device for arraying with at least one other optical integrated apparatus having a first height, said device comprising:
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(i) a semiconductor substrate including first and second sides; (ii) a substrate-side electrode which is formed on the first side of the semiconductor substrate; (iii) a micro-lens layer which is epitaxially grown on a whole area of the second side of the substrate, the second side having a substantially smooth, hemispherically etched surface formed by a melt-back etching technique, said substantially smooth surface allowing a proper focusing of light; (iv) epitaxial layers which are epitaxially grown on a whole area of the micro-lens layer, said epitaxial layers defining a predetermined ridge height substantially even with said first height; (v) a dielectric film which is formed on the epitaxial layers; and (vi) an epilayer-side electrode which is formed on a whole area of the dielectric film, whereby said predetermined ridge height is substantially even with said first height of said other apparatus enables arraying of said device and said apparatus.
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Specification