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Light emitting diode with improved luminous efficiency having a contact structure disposed on a frosted outer surface

  • US 5,898,192 A
  • Filed: 08/27/1996
  • Issued: 04/27/1999
  • Est. Priority Date: 10/09/1995
  • Status: Expired due to Fees
First Claim
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1. Light emitting diode comprising a number of epitaxial layers suitable for light emission arranged on a semiconductor substrate, and a contact layer structure disposed on at least a part of the outer major surface of the epitaxial layers, and wherein:

  • the outer major surface of the epitaxial layers is completely frosted in order to increase the luminous efficiency,the contact layer structure is arranged on the frosted surface, andthe roughness depth of the frosted surface is below 1 um.

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