Dual EPI active pixel cell design and method of making the same

• US 5,898,196 A
• Filed: 10/10/1997
• Issued: 04/27/1999
• Est. Priority Date: 10/10/1997
• Status: Expired due to Term

• Current Assignee: SK Hynix Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Hook, Terence B., Wong, Hon-Sum P.
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/948,739
• Time in Patent Office: 564 Days
• Field of Search: 257/290, 257/291, 257/292, 257/436, 257/464
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

The present invention is a dual epi active pixel sensor cell having a p- region of dual thickness and a method of making the same. The dual epi active pixel sensor cell produces a sensor with improved noise and latch-up reduction and improved red absorption. The thin p- epi region is positioned in the logic region for improved latch-up immunity. The thick p- epi is positioned in the pixel region for improved red absorption.

Claims

1. An active pixel sensor cell comprising:

a substrate doped at a first concentration and having a top surface;

a plurality of photosensitive devices and logic devices;

a layer doped at a second concentration extending a first distance from the top surface into the substrate beneath at least some of said logic devices; and

said layer doped at a second concentration extending a second distance, which is greater than the first distance, from said top surface into said substrate beneath at least some of said photosensitive devices.

2. The device as claimed in claim 1 wherein a difference between the first and second distance is at least about one micrometer.

3. The device as claimed in claim 1 wherein said substrate and said doped layer are p-type.

4. The device as claimed in claim 1 wherein substrate and said doped layer are n-type.

5. An active pixel sensor cell device comprising:

a p- layer of varying thickness;

a logic region wherein said p- layer has a first thickness; and

a pixel region adjacent to said logic region wherein said p- layer has a second thickness greater than the first thickness.

6. The device as claimed in claim 5 wherein said pixel region comprises at least one photosensitive device.

7. The device as claimed in claim 6 wherein said logic region comprises:

at least one transfer device in series with said photosensitive device adapted to transfer electrons from said photosensitive device;

at least one pre-charge device adapted to collect electrons which flow through said transfer device;

at least one source-follower device adapted to amplify the electrons collected by said pre-charged device; and

at least one bit switch device adapted to control an output signal.

8. The device as claimed in claim 6 wherein said logic region comprises at least one logic device from the group consisting of a decoder, an embedded microprocessor, and a signal processing element, or similar circuitry.