Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith

• US 5,898,359 A
• Filed: 12/19/1997
• Issued: 04/27/1999
• Est. Priority Date: 12/19/1997
• Status: Expired due to Term

• Current Assignee: Hanger Solutions, LLC (IP Investments Group LLC)
• Original Assignee: Delco Electronics Corporation (General Motors Company)
• Inventors: Ellis, Marion Edmond
• Primary Examiner(s): Gellner, Michael L.
• Assistant Examiner(s): Lee, Richard K.
• Application Number:
  US08/994,113
• Time in Patent Office: 494 Days
• Field of Search: 338/47, 338/36, 338/42, 338/13, 338/2, 338/4
• US Class Current: 338/47
• CPC Class Codes: H01C 10/103 by using means responding to magnetic or electric fields, e.g. by addition of magnetisable or piezoelectric particles to the resistive material, or by an electromagnetic actuator

Abstract

A thick-film strain-sensing structure for a media-compatible, high-pressure sensor. The strain-sensing structure generally includes a metal diaphragm, at least one electrical-insulating layer on the diaphragm, an interface layer on the electrical-insulating layer, and at least one thick-film piezoresistor on the interface layer for sensing deflection of the diaphragm. The interface layer and the electrical-insulating layers are preferably formed by thick-film processing, as done for the piezoresistors. For compatibility with the metal diaphragm, the electrical-insulating layer has a CTE near that of the diaphragm. The interface layer is formulated to inhibit and control diffusion of the electrical-insulating layers into the piezoresistors. For this purpose, the interface layer is formed from a composition that contains, in addition to a suitable organic media, alumina, zinc oxide, and at least one glass frit mixture comprising lead oxide, a source of boron oxide such as boric acid, silica and alumina. Additional constituents of the interface layer preferably include titania, cupric oxide, manganese carbonate as a source for manganese monoxide, and cobalt carbonate as a source of cobalt oxide.

Claims

1. A sensing structure comprising a substrate, at least one electrical-insulating layer on the substrate, an interface layer on the electrical-insulating layer, and a thick-film piezoresistor on the interface layer, the interface layer having a composition comprising particulate alumina and particulate zinc oxide closely divided and suspended in a glass matrix, the interface layer separating the piezoresistor from the electrical-insulating layer and inhibiting diffusion into the piezoresistor of constituents in the electrical-insulating layer.

2. A sensing structure as recited in claim 1, wherein the glass matrix is a lead-alumina-borosilicate glass.

3. A sensing structure as recited in claim 1, wherein the glass matrix comprises lead oxide, alumina, boron oxide, silica and one or more oxides chosen from the group consisting of titania, cupric oxide, manganese monoxide and cobalt oxide.

4. A sensing structure as recited in claim 1, wherein the electrical-insulating layer has a composition comprising metal oxides.

5. A sensing structure as recited in claim 1, wherein the substrate is a steel alloy.

6. A sensing structure as recited in claim 1, wherein the interface layer is fired from an ink composition comprising, in weight percent, about 15% to about 35% alumina, about 3% to about 6% zinc oxide, and about 34% to about 53% of a glass frit mixture, the balance being an organic media.

7. A sensing structure as recited in claim 6, wherein the glass frit mixture contains, in weight percent, about 50% to about 74% lead oxide, about 10% to about 25% boric acid as a source of boron oxide, about 8% to about 26% silica, up to about 12% alumina, up to about 3% titania, and up to 8% of at least one material selected from the group consisting of cupric oxide, manganese carbonate as a source of manganese monoxide, and cobalt carbonate as a source of cobalt oxide.

8. A sensing structure as recited in claim 7, wherein the glass frit mixture further contains, in weight percent, about 0.5% to about 3.0% cupric oxide, about 0.5% to about 4.0% manganese carbonate, about 3.5% to about 4% cobalt carbonate, alone or in combination.

9. A sensing structure as recited in claim 1, wherein the glass frit materials are formed from a combination of two glass frit mixtures.

10. A sensing structure as recited in claim 1 wherein the sensing structure is characterized by a gage factor of at least 20.

11. A sensing structure of a pressure sensor, the sensing structure comprising:

a steel alloy diaphragm;

at least one dielectric layer on the substrate, the dielectric layer having a composition comprising metal oxides;

an interface dielectric layer on and contacting the dielectric layer, the interface dielectric layer comprising particulate alumina and particulate zinc oxide closely divided and suspended in a glass matrix comprising lead oxide, alumina, boron oxide and silica; and

a thick-film piezoresistor on the interface dielectric layer for sensing a deflection of the diaphragm;

wherein the interface dielectric layer separates the piezoresistor from the dielectric layers and inhibits diffusion into the piezoresistor of constituents in the dielectric layers.

12. A sensing structure as recited in claim 11, wherein the interface dielectric layer is fired from an ink composition comprising, in weight percent, about 15% to about 35% alumina, about 3% to about 6% zinc oxide, and about 34% to about 53% of a glass frit mixture, the balance being an organic media.

13. A sensing structure as recited in claim 12, wherein the ink composition comprises one or more glass frit mixtures chosen from the group consisting of first, second and third glass frit mixtures, wherein:

the first glass frit mixture contains, in weight percent, about 53.3% lead oxide, about 15.1% boric acid as a source of boron oxide, about 19.4% silica, about 8.2% alumina, about 1.0% titania, and about 3.0% cupric oxide;

the second glass frit mixture contains, in weight percent, about 53.3% lead oxide, about 15.1% boric acid as a source of boron oxide, about 19.4% silica, about 8.2% alumina, about 1.0% titania, and about 3.0% cobalt carbonate as a source of cobalt oxide; and

the third glass frit mixture contains, in weight percent, about 52.8% lead oxide, about 15.0% boric acid as a source of boron oxide, about 19.2% silica, about 8.1% alumina, about 0.5% titania, about 0.5% cupric oxide, and about 4.0% manganese carbonate as a source of manganese monoxide.

14. A sensing structure as recited in claim 13, wherein the ink composition comprises, in weight percent, about 32.9% alumina, about 3.4% zinc oxide, about 27.4% of the organic media, and about 36.3 of the first glass frit mixture.

15. A sensing structure as recited in claim 13, wherein the ink composition comprises, in weight percent, about 31.0% alumina, about 4.0% zinc oxide, about 27.0% of the organic media, about 19.0% of the first glass frit mixture, and about 19.0% of the second glass frit mixture.

16. A sensing structure as recited in claim 13, wherein the ink composition layer comprises, in weight percent, about 34.9% alumina, about 5.8% zinc oxide, about 24.7% of the organic media, about 17.3 of the first glass frit mixture, and about 17.3 of the second glass frit mixture.

17. A sensing structure as recited in claim 13, wherein the ink composition comprises, in weight percent, about 30.0% alumina, about 5.0% zinc oxide, about 27.0% of the organic media, about 19.0% of the first glass frit mixture, and about 19.0% of the second glass frit mixture.

18. A sensing structure as recited in claim 13, wherein the ink composition comprises, in weight percent, about 15.0% alumina, about 5.0% zinc oxide, about 27.0% of the organic media, about 26.5% of the first glass frit mixture, and about 26.5% of the second glass frit mixture.

19. A sensing structure as recited in claim 13, wherein the ink composition comprises, in weight percent, about 30.0% alumina, about 5.0% zinc oxide, about 27.0% of the organic media, and about 38.0% of the third glass frit mixture.

20. A sensing structure as recited in claim 11, wherein the sensing structure is characterized by a gage factor of greater than 20.