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Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith

  • US 5,898,359 A
  • Filed: 12/19/1997
  • Issued: 04/27/1999
  • Est. Priority Date: 12/19/1997
  • Status: Expired due to Term
First Claim
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1. A sensing structure comprising a substrate, at least one electrical-insulating layer on the substrate, an interface layer on the electrical-insulating layer, and a thick-film piezoresistor on the interface layer, the interface layer having a composition comprising particulate alumina and particulate zinc oxide closely divided and suspended in a glass matrix, the interface layer separating the piezoresistor from the electrical-insulating layer and inhibiting diffusion into the piezoresistor of constituents in the electrical-insulating layer.

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