Method for chip testing

• US 5,899,703 A
• Filed: 03/28/1997
• Issued: 05/04/1999
• Est. Priority Date: 03/28/1997
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wheater, Donald L., Pogge, H. Bernhard, Kalter, Howard L., Prokop, George S.
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/827,207
• Time in Patent Office: 767 Days
• Field of Search: 438/17, 438/18, 324/754, 324/758, 324/765
• US Class Current: 438/18
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: H01L 22/32 Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors arrangements for conducting electric current to or from the solid state body in operation H01L23/48

Abstract

Large area chip functionality is tested at an intermediate level in the manufacturing process. A process sequence is implemented in which a layer of insulator material is deposited over the chip. This layer is then processed to selectively open areas over existing vias which are to be used for chip level testing. The other vias remain covered with insulator. A sacrificial metal level is then deposited on the insulator layer and patterned to create adequately large test pad areas connected to exposed vias. This metal layer and the insulator layer covering the other buried vias are removed after testing to re-establish the full via set. As an extension to this basic test process, test circuits can be formed around or beside the chip to be tested in the kerf areas separating the chip from other chips on the semiconductor wafer. Connections to the test circuits is with a sacrificial metal layer over an insulator layer. The sacrificial metal layer and insulator layer are removed after testing. The test circuits are scribed off in the process of separating the chips after back end of line processing is completed.

Claims

1. A method of testing large area integrated circuit chips during an intermediate level in a manufacturing process of the chips comprising the steps of:

forming an insulating layer over an integrated circuit chip;

selectively opening at least one area over existing vias;

depositing a sacrificial metal layer over the insulating layer and filling the area;

patterning the deposited sacrificial meal layer to form at least one test pad connected to an exposed one of said vias;

contacting the at least one test pad with test probes and testing the integrated circuit chip; and

removing the insulating layer and the deposited sacrificial metal layer.

2. The method of testing recited in claim 1 wherein the step of removing includes planarizing the integrated circuit chip to remove the deposited sacrificial metal layer and amount of the insulating layer.

3. The method of testing recited in claim 2 wherein the step of planarization includes chemical-mechanical polishing the integrated circuit chip.

4. A method of testing large area integrated circuit chips during an intermediate level in a manufacturing process of the chips comprising the steps of:

forming an insulating layer over an integrated circuit chip;

selectively opening at least one area over existing vias;

forming a test circuit in kerf areas adjacent to the integrated circuit chip prior to separating the chip from other chips formed on a semiconductor wafer;

depositing a sacrificial metal layer over the insulating layer and filling the at least one selectively opened area;

patterning the deposited sacrificial metal layer to form at least one connection between the test circuit and an exposed one of said vias;

testing the integrated circuit chip with the test circuit;

removing the insulating layer and the deposited sacrificial metal layer; and

scribing the afer in the kerf areas to separate the integrated circuit chip and remove the test circuits.

5. The method of testing recited in claim 4 wherein the step of removing includes planarizing the integrated circuit chip to remove the deposited sacrificial metal layer and an amount of the insulating layer.

6. The method of testing recited in claim 5 wherein the step of planarizing includes chemical-mechanical polishing the integrated circuit chip.