Plasma process chamber

• US 5,900,064 A
• Filed: 05/01/1997
• Issued: 05/04/1999
• Est. Priority Date: 05/01/1997
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kholodenko, Arnold
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/847,013
• Time in Patent Office: 733 Days
• Field of Search: 118/723 R, 118/723 E, 118/723 ER, 118/723 I, 118/723 IR, 118/723 MW, 118/728, 118/500, 118/723 AN, 156/345, 427/569, 438/710, 438/758
• US Class Current: 118/723.00R
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01J 2237/004 Charge control of objects or beams
• CPC Class Codes: H01J 37/32577 Electrical connecting means
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: Y10S 156/915 Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Abstract

A process chamber (14) for processing a substrate (12) in a plasma, comprises a support for supporting the substrate having a surface with a perimeter (32). A gas distributor is provided for distributing process gas into the chamber (14). A plasma generator (40) is used to generate a plasma comprising plasma species from the process gas. A plurality of electrical ground pathways (80) around the perimeter (32) of the substrate (12) are spaced apart, electrically isolated from one another, and provide electrical paths to ground for the charge carried by the plasma species. Preferably, the ground pathways (80) extend through a dielectric surface (70) abutting and extending substantially continuously around the perimeter (32) of the substrate (12).

Claims

1. A process chamber for processing a substrate having a surface with a perimeter, the process chamber comprising:

(a) a support for supporting the substrate;

(b) a gas distributor for distributing process gas into the process chamber;

(c) a plasma generator for forming plasma comprising charged plasma species from the process gas; and

(d) a plurality of electrical ground pathways around the perimeter of the substrate, the ground pathways spaced apart and electrically isolated from one another, thereby providing paths to electrical ground for the charged plasma species.

2. The process chamber of claim 1 wherein the ground pathways have at least one of the following characteristics:

(i) a resistivity from about 2Ω

to about 1000Ω

;

or

(ii) a controlled current leakage path of about 5 to about 1000 microamps.

3. The process chamber of claim 1 wherein the ground pathways are through a dielectric surface abutting and extending substantially continuously around the perimeter of the substrate.

4. The process chamber of claim 3 wherein the dielectric surface comprises at least about 10 ground pathways/cm².

5. The process chamber of claim 3 wherein the ground pathways comprise microcracks extending through the dielectric surface to expose portions of a conductor member abutting the dielectric surface.

6. The process chamber of claim 5 wherein the microcracks comprise at least one of the following characteristics:

(i) the microcracks have openings with a total area of less than about 5% of a total dielectric surface area;

(ii) the microcracks have openings with an average width of about 0.5 microns to about 100 microns.

7. The process chamber of claim 5 wherein the conductor member comprises:

(i) an L-shaped conductor extending from walls of the process chamber toward the substrate;

or

(ii) an annular collar resting on the support for the substrate.

8. The process chamber of claim 3 wherein at least a portion of the dielectric surface comprises a plasma focusing surface extending upwardly in a plane transverse to the surface of the substrate to direct the plasma species towards the substrate.

9. The process chamber of claim 3 wherein the dielectric surface comprises at least one of the following characteristics:

(1) a dielectric constant of from about 2 to about 4;

or

(2) a dielectric breakdown strength of from about 1 kV to about 7 kV.

10. The process chamber of claim 1 further comprising an electrostatic chuck for electrostatically holding the substrate in the process chamber, and wherein the ground pathways are distributed around the periphery of the chuck such that electrical charge of the charged plasma species above the electrostatic chuck can be rapidly dissipated through the ground pathways.

11. The process chamber of claim 1 further comprising an open-ended channel having (i) an inlet adjacent to, and extending substantially continuously around, a peripheral edge of the substrate;

and (ii) an outlet directed substantially toward an exhaust port in the chamber.

12. A composite focus ring for processing a substrate in a plasma, the composite focus ring comprising:

(a) a conductor member shaped and sized to abut, and extend substantially continuously around, a perimeter of the substrate; and

(b) a dielectric on the conductor member, the dielectric having a plurality of electrical ground pathways extending therethrough, the ground pathways capable of discharging charge carried by plasma species used to process the substrate.

13. The composite focus ring of claim 12 wherein the ground pathways comprise at least one of the following characteristics:

(1) the ground pathways are spaced apart and electrically isolated from one another by the dielectric surface;

(2) the ground pathways comprise a resistivity from about 2Ω

to about 1000Ω

;

or

(3) the ground pathways comprise a controlled current electrical leakage path of from about 5 to about 1000 microamps.

14. The composite focus ring of claim 12 wherein the dielectric comprises at least about 10 ground pathways/cm² of dielectric surface area.

15. The composite focus ring of claim 12 wherein the ground pathways comprise microcracks extending through the dielectric to expose portions of the conductor member abutting the dielectric.

16. The composite focus ring of claim 15 wherein the microcracks comprise at least one of the following characteristics:

(i) openings having a total opening area of less than about 5% of the total dielectric surface area;

(ii) openings having an average width of about 0.5 microns to about 100 microns.

17. The composite focus ring of claim 15 wherein the conductor member comprises:

(1) an L-shaped conductor extending from walls of the process chamber toward the substrate;

or

(2) an annular collar resting on a support for the substrate.

18. The composite focus ring of claim 15 wherein at least a portion of the dielectric surface comprises a plasma focusing surface extending upwardly in a plane transverse to the surface of the substrate to direct plasma species towards the substrate.

19. The composite focus ring of claim 15 wherein the dielectric surface comprises at least one of the following characteristics:

(1) a dielectric constant of from about 2 to about 4;

or

(2) a dielectric breakdown strength of from about 1 kV to about 7 kV.

20. A method of processing a substrate in a plasma zone, the method comprising the steps of:

(a) placing the substrate in the plasma zone, the substrate having a surface with a perimeter;

(b) introducing process gas into the plasma zone and forming charged plasma species from the process gas; and

(c) providing a plurality of electrical ground pathways around the perimeter of the substrate to provide paths to electrical ground for the charged plasma species, the ground pathways spaced apart and electrically isolated from one another.

21. The method of claim 20 wherein the plasma zone comprises anode and cathode electrodes for forming a capacitively coupled electric field in the plasma zone, and wherein step (c) comprises the step of maintaining a sufficient number of ground pathways around the perimeter of the substrate to provide a surface area ratio of the anode to cathode electrode of at least about 1.5:

1.

22. The method of claim 20 wherein in step (c) the ground pathways provide:

(1) a resistivity from about 2Ω

to about 1000Ω

;

or

(2) a controlled current electrical leakage path of about 5 to about 1000 microamps.

23. The method of claim 20 wherein step (b) further comprises the step of directing the charged plasma species onto the surface of the substrate using a plasma focusing surface.

24. The method of claim 20 further comprising the step of removing the process gas byproduct from the plasma zone by directing the flow of process gas byproduct into an inlet of an open-ended channel adjacent to the substrate.

25. A process chamber for processing a substrate having a surface with a center and a peripheral edge, the process chamber comprising:

(a) a support for supporting a substrate;

(b) a gas distributor for distributing process gas in the chamber, and an exhaust port for removing spent process gas from the chamber;

(c) a plasma generator for forming a plasma from the process gas; and

(d) a focus ring comprising a wall surrounding the substrate to direct the plasma toward the substrate surface, the wall having an open ended channel comprising an inlet adjacent to, and extending substantially continuously around, the peripheral edge of the substrate, and an outlet directed substantially towards the exhaust port in the chamber.

26. The apparatus of claim 25, wherein the channel comprises an inlet having an opening sized smaller than an opening of the outlet.

27. The apparatus of claim 25, wherein the cross-sectional area of the channel increases from the inlet to the outlet.

28. The apparatus of claim 25, wherein the inlet and outlet of the channel each comprise an axial central axis substantially in a same plane as the substrate.

29. The apparatus of claim 25, wherein the inlet of the channel comprises an opening having an axial central axis that is at an angle to a plane of the surface of the substrate.

30. The apparatus of claim 29, wherein at least a portion of the outlet of the channel comprises an opening having an axial central axis substantially aligned to an axial central axis of the exhaust port.

31. The apparatus of claim 25, wherein the channel is defined by a gap between an overhang that is spaced apart from a raised collar surrounding the peripheral edge of the substrate.

32. The apparatus of claim 31, wherein the overhang comprises an inner conical surface that tapers toward the peripheral edge of the substrate to focus a plasma on the substrate, and an outer conical surface that tapers away from the peripheral edge of the substrate to direct spent process gas away from the substrate surface.

33. The apparatus of claim 31, wherein the overhang comprises an inwardly extending lip having a lower surface conforming to a shape of an upper surface of the raised collar.