Plasma treatment method and apparatus
First Claim
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1. A plasma treatment apparatus for plasma-treating a substrate under a reduced pressure, comprising:
- a chamber electrically connected to ground;
gas supply means for supplying a process gas into said chamber;
exhaust means for exhausting the chamber;
a lower electrode on which said substrate is disposed;
an upper electrode mounted within the chamber to face said lower electrode;
a first power supply connected to the lower electrode through a first matching circuit to apply a high frequency signal to the lower electrode, said high frequency signal having a first frequency f1 lower than an inherent lower ion transit frequency of the process gas;
a second power supply to generate a high frequency signal having a second frequency f2 higher than an inherent upper ion transit frequency of the process gas; and
an amplitude modulation circuit connected to each of said first and second power supplies for receiving high frequency signals having the first and second frequencies f1 and f2, the amplitude of the high frequency signal having the second frequency f2 being modulated by the high frequency signal having the first frequency f1, and said amplitude-modulated signal being applied to the upper electrode through the second matching circuit.
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Abstract
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
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Citations
2 Claims
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1. A plasma treatment apparatus for plasma-treating a substrate under a reduced pressure, comprising:
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a chamber electrically connected to ground; gas supply means for supplying a process gas into said chamber; exhaust means for exhausting the chamber; a lower electrode on which said substrate is disposed; an upper electrode mounted within the chamber to face said lower electrode; a first power supply connected to the lower electrode through a first matching circuit to apply a high frequency signal to the lower electrode, said high frequency signal having a first frequency f1 lower than an inherent lower ion transit frequency of the process gas; a second power supply to generate a high frequency signal having a second frequency f2 higher than an inherent upper ion transit frequency of the process gas; and an amplitude modulation circuit connected to each of said first and second power supplies for receiving high frequency signals having the first and second frequencies f1 and f2, the amplitude of the high frequency signal having the second frequency f2 being modulated by the high frequency signal having the first frequency f1, and said amplitude-modulated signal being applied to the upper electrode through the second matching circuit. - View Dependent Claims (2)
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Specification