Method for optical inspection and lithography

• US 5,900,354 A
• Filed: 07/03/1997
• Issued: 05/04/1999
• Est. Priority Date: 07/03/1997
• Status: Expired due to Fees

• Current Assignee: John Samuel Batchelder
• Original Assignee: John Samuel Batchelder
• Inventors: Batchelder, John Samuel
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US08/887,698
• Time in Patent Office: 670 Days
• Field of Search: 430/311, 430/313, 430/395
• US Class Current: 430/395
• CPC Class Codes: G03F 7/2041 in the presence of a fluid, e.g. immersion; using fluid cooling means
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/70591 Testing optical components
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70808 Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
• CPC Class Codes: G03F 7/70875 Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
• CPC Class Codes: G03F 7/70891 Temperature

Abstract

A process for illuminating a structured surface initially introduces a fluid into a volume, the fluid nearly completely chemically inactive with respect to the structured surface. Next, pressure and temperature are established within the volume which maintains the fluid in a supercritical state. The structured surface is then immersed in the supercritical fluid, and optical energy is directed through the supercritical fluid and onto the structured surface.

Claims

1. A process for illuminating a structured surface, comprising:

introducing a fluid into a volume, said fluid nearly completely chemically inactive with respect to said structured surface;

establishing within said volume a pressure and temperature which maintains said fluid in a supercritical state;

immersing the structured surface in said supercritical fluid; and

directing optical energy through the supercritical fluid and onto said structured surface.

2. A process as in claim 1, wherein the optical energy is spatially structured in accord with planar features.

3. A process as in claim 2, wherein the structured surface contains photosensitive material that changes composition in response to the optical energy.

4. A process as in claim 1, wherein the structured surface is a portion of a circuitry pattern on a semiconductor wafer.

5. A process as in claim 4, wherein the structured surface is entirely immersed in the supercritical fluid.

6. A process as in claim 1, wherein the super-critical fluid contains xenon.

7. A process as in claim 1, further comprising:

reflecting a fraction of the optical energy from the structured surface back into the supercritical fluid;

collecting a portion of the optical energy reflected from the structured surface; and

imaging the collected optical energy onto a photoresponsive detector.

8. A process for optically characterizing a patterned surface, the process comprising:

immersing the patterned surface in a supercritical fluid that is nearly completely chemically inactive with respect to said patterned surface;

illuminating the patterned surface with optical energy that passes through the supercritical fluid, the optical energy selected from the group consisting of;

visible and ultraviolet wavelengths;

collecting onto a detection means scattered optical energy that has been transmitted through the supercritical fluid after scattering from the patterned surface; and

generating a signal in the detection means from the collected, scattered optical energy to enable a characterization of the patterned surface.

9. The process of claim 8, wherein the supercritical fluid contains xenon.

10. The process of claim 9, wherein the supercritical fluid is maintained approximately at room temperature.

11. The process of claim 8, wherein the optical energy is directed at the patterned surface from within a first range of solid angles with respect to the patterned surface, and the scattered optical energy is collected from within said first range of solid angles.

12. The process of claim 8, wherein the optical energy is directed at the patterned surface from within a first range of solid angles with respect to the patterned surface, and the scattered optical energy is collected from outside the first range of solid angles.

13. The process of claim 8, wherein the patterned surface resides on a semiconductor substrate.

14. A process for optically projecting an image onto a photoresist covered surface, the process using a transmission mask defining the image to be projected and a system of lenses and mirrors for forming an image of the transmission mask, the process comprising:

immersing the photoresist covered surface in a supercritical fluid that is nearly completely chemically inactive with respect to said photoresist covered surface;

aligning the photoresist covered surface in the supercritical fluid so that the image of the transmission mask produced by the system of lenses is aligned with a predetermined orientation of the photoresist covered surface;

illuminating the mask with optical energy comprising optical radiation selected from the group consisting of visible and ultraviolet wavelengths; and

projecting optical energy that has passed through the mask with the system of lenses and mirrors through the supercritical fluid and onto the photoresist covered surface.

15. The process of claim 14, wherein the supercritical fluid contains xenon.

16. The process of claim 14, wherein a portion of the system of lenses and mirrors is immersed in the supercritical fluid.

17. The process of claim 14, wherein the photoresist covered surface is a portion of a semiconductor circuit.