Semiconductor structure design and process visualization through the use of simple process models and intuitive interfaces

• US 5,901,062 A
• Filed: 09/24/1996
• Issued: 05/04/1999
• Est. Priority Date: 09/25/1995
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Mozumder, Purnendu Kanti, Burch, Richard Gene
• Primary Examiner(s): Teska, Kevin J.
• Assistant Examiner(s): Kik, Phallaka
• Application Number:
  US08/719,056
• Time in Patent Office: 952 Days
• Field of Search: 364/488-491, 364/578, 364/468.02, 364/468.04, 364/468.28, 345/419-427, 345/333-334, 345/339, 345/340, 345/352
• US Class Current: 703/2
• CPC Class Codes: G06F 30/23 using finite element methods [FEM] or finite difference methods [FDM]

Abstract

A semiconductor structure design and process visualization tool (10). A main menu (30) allows a user to add, edit or delete process steps (16a-f) to create a process flow in process flow window (12). Main menu (30) provides a set of process models to be selected from. The set of process models are simple first-order geometric models that require only physical parameters of a resulting device layer. Specific process conditions are not required. Semiconductor process and wafer representation tool applies the physical parameters to the corresponding process model to quickly create a cross-section (20) in cross-section window (22) corresponding to a selected process step (16d) in process flow window (12).

Claims

1. A method for visualizing a semiconductor design and process, comprising the steps of:

providing a plurality of abstract process models having only a plurality of physical parameter inputs;

providing a menu for adding, deleting, and editing a plurality of process steps using said plurality of abstract process models;

displaying said plurality of process steps in a process flow window and allowing for the selection of one of said process steps; and

displaying a cross-section of a wafer at said selected process step in a cross-section window.

2. The method of claim 1, wherein said plurality of abstract process models comprises one or more of the following:

a conformal deposition module, planarizing deposition module, an anisotropic etch module, and an isotropic etch module.

3. The method of claim 1, wherein said plurality of physical parameter inputs comprise at least one parameter selected from the group consisting of:

material type, thickness, sidewall ratio, etch selectivity, etch depth, misalignment, and mask openings.

4. The method of claim 1, wherein said cross-section window is associated with a graphical editor for customizing a cross-section profile.

5. The method of claim 1, wherein said cross-section window is associated with a text editor for adding text to said cross-section window.

6. The method of claim 1, further comprising the step of creating and updating, using a unified semiconductor process and wafer representation tool, said cross-section for said selected step using said process models prior to displaying said cross-section in said cross-section window.

7. The method of claim 1, wherein said plurality of process models comprises first order geometric models.

8. The method of claim 1, wherein said step of providing a menu comprises the step of:

providing a list of said plurality of process models; and

providing a dialog box for a each of said plurality of process models for receiving said plurality of physical parameters.

9. The method of claim 1, further comprising an editor for creating custom process models to be added to said set of process models.

10. A method for visualizing a semiconductor device structure and process, comprising the steps of:

receiving a first process step input including only a first plurality of physical characteristics of a first device layer;

creating a first semiconductor process and wafer representation (SPWR) for said first process step using said first plurality of physical characteristics;

displaying said first semiconductor process and wafer representation;

receiving a second process step input including only a second plurality of physical characteristics for a second device layer;

creating a second SPWR for said first and second process steps;

displaying said second SPWR;

receiving instructions to alter said first device layer;

automatically altering both said first and second SPWRs in response to said instructions; and

redisplaying said first SPWR.

11. The method of claim 10, further comprising the steps of:

receiving a third plurality of physical characteristics of a third device layer to be formed after said first device layer and prior to said second device layer;

creating a third SPWR in response to said third plurality of physical characteristics;

altering said second SPWR in response to the third plurality of physical characteristics; and

displaying said third SPWR.

12. The method of claim 10, further comprising the steps of:

receiving a third plurality of physical characteristics of a third device layer to be formed after said first device layer and said second device layer;

creating a third SPWR in response to said third plurality of physical characteristics;

displaying said third SPWR;

receiving a display process step input; and

displaying a selected one of said first, second or third SPWRs in response to said display process step input.

13. The method of claim 10, wherein said first plurality of physical characteristics are selected from the group consisting of:

material type, thickness, sidewall ratio, misalignment, etch selectivity, etch depth, lateral etch ratio, number of mask openings, and the size of mask openings.

14. The method of claim 10, wherein said step of creating said first SPWR applies said first plurality of physical characteristics to a geometric process model.

15. The method of claim 14, wherein said geometric process model is selected from the group consisting of:

a geometric conformal deposition model, a geometric planarizing deposition model, a geometric anisotropic etch model, a geometric isotropic etch model, a geometric reflow model, and a geometric chemical-mechanical polish model.