Method and apparatus for cleaning a chamber

• US 5,902,403 A
• Filed: 07/12/1996
• Issued: 05/11/1999
• Est. Priority Date: 11/28/1995
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Yamamoto, Takaaki, Aitani, Terukazu
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/682,861
• Time in Patent Office: 1,033 Days
• Field of Search: 156/345, 118/723 E, 118/723 R
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 37/32 Gas-filled discharge tubes heating by discharge H05B
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

The present invention provides a method and apparatus for cleaning deposits in a chemical vapor deposition ("CVD") chamber equipped for generating a plasma. A gas supplying line is connected to the CVD chamber to deliver a cleaning gas that reacts with the deposits formed therein. When all of the deposits have been reacted and the chamber is clean, the pressure in the chamber will change, either increasing or decreasing. A pressure detector located beyond an adjustable valve in the exhaust line allows the reaction end point to be determined, while allowing the adjustable valve to maintain a constant pressure in the chamber itself.

Claims

1. A self-cleaning chemical vapor deposition device comprising:

(a) a pressure-adjustable processing chamber having a pair of electrodes for generating a plasma therebetween;

(b) a source of electric power that is electrically connected to the electrodes;

(c) a cleaning gas supply line connected to the chamber;

(d) an exhaust line having a first end connected to the processing chamber, a second end connected to an exhaust, and an adjustable valve located between the first and second ends for controlling the pressure in the processing chamber;

(e) a first pressure detector connected to the exhaust line in a position between the exhaust and the adjustable valve; and

(f) a controller that monitors the pressure detected by the first pressure detector to determine the end point of the cleaning gas reaction, wherein the controller comprises program code for determining the endpoint of the cleaning gas reaction by;

(i) supplying the cleaning gas to the chamber;

(ii) forming the plasma within the chamber;

(iii) exhausting gases from the chamber through the exhaust line communicating with the exhaust;

(iv) controlling the adjustable valve in the exhaust line to maintain the setpoint pressure within the chamber;

(v) detecting the pressure in the exhaust line between the adjustable valve and the exhaust; and

(vi) determining the end point of the reaction according to a change in the exhaust line pressure.

2. The device of claim 1, wherein the pressure is detected between the exhaust and the adjustable valve.

3. The device of claim 1, further comprising a second pressure detector connected to the chamber for measuring the internal pressure of the chamber, wherein the pressure detector communicates the chamber pressure to the controller, and wherein the controller comprises program code which adjusts the adjustable valve to control the chamber pressure at a setpoint pressure.

4. The device of claim 1, further comprising program code for:

(viii) stopping the supply of electric power to the electrode right after determining the end point of the cleaning gas reaction.

5. The device of claim 1, wherein the cleaning gas is a halogen-containing gas, and the end point is determined by a rise in pressure.

6. The device of claim 5, wherein the halogen-containing gas is a fluorine-containing gas.

7. A self-cleaning chemical vapor deposition device comprising:

(a) a pressure-adjustable processing chamber having a pair of electrodes for generating a plasma therebetween;

(b) a source of electric power that is electrically connected to the electrodes;

(c) a cleaning gas supply line connected to the chamber;

(d) an exhaust line having a first end connected to the processing chamber a second end connected to an exhaust and an adjustable valve located between the first and second ends for controlling the pressure in the processing chamber;

(e) a first pressure detector connected to the exhaust line in a position between the exhaust and the adjustable valve; and

(f) a controller that monitors the pressure detected by the first pressure detector to determine the end point of the cleaning gas reaction, wherein the controller comprises program code for determining the endpoint of the cleaning gas reaction by;

(i) detecting an operating pressure within the chamber;

(ii) operating the exhaust valve to maintain the operating pressure; and

(iii) detecting a pressure change in the exhaust line downstream of the exhaust valve to determine the endpoint of the reaction.

8. The device of claim 7, wherein the controller further comprises program code for:

(iv) discontinuing the flow of gas when the pressure change in the exhaust line exceeds the set point pressure change indicating that the reaction is substantially complete, wherein the set point pressure change is greater than normal exhaust line pressure fluctuations.