Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
First Claim
1. Apparatus for supporting a workpiece in a spaced-apart relation to a support surface of a workpiece support chuck, comprising:
- a chuck body fabricated of a relatively low resistivity material having a support surface; and
a plurality of individual mesas located upon the support surface of the chuck body wherein each mesa in said plurality of mesas comprises a raised portion of said chuck body that rises above said support surface and a cap, fabricated from a high resistivity dielectric, deposited upon a top surface of the raised portion, said cap having an arcuate profile that minimizes the area of contact between the workpiece and the cap.
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Accused Products
Abstract
A hybrid Johnsen-Rahbek chuck that provides a combination of both Coulombic and Johnsen-Rahbek chucking mechanisms. More specifically, the chuck contains a plurality of dielectric mesas deposited upon particular regions of the support surface of a chuck. The body of the chuck is generally fabricated from a Johnsen-Rahbek semiconducting dielectric. The mesas are formed from a thin film deposition of a highly-resistive dielectric. Consequently, the thin, highly resistive film prevents excess DC standby current as well as reduces the dependence of the electrostatic chuck performance on the wafer backside morphology and composition.
275 Citations
19 Claims
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1. Apparatus for supporting a workpiece in a spaced-apart relation to a support surface of a workpiece support chuck, comprising:
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a chuck body fabricated of a relatively low resistivity material having a support surface; and a plurality of individual mesas located upon the support surface of the chuck body wherein each mesa in said plurality of mesas comprises a raised portion of said chuck body that rises above said support surface and a cap, fabricated from a high resistivity dielectric, deposited upon a top surface of the raised portion, said cap having an arcuate profile that minimizes the area of contact between the workpiece and the cap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A system for processing semiconductor wafers comprising:
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a process chamber; a wafer support pedestal, positioned within said process chamber, for supporting a wafer for processing within said process chamber, where said wafer support pedestal comprises a chuck body fabricated of a relatively low resistivity material having a support surface and a plurality of individual mesas located upon the support surface of the chuck body to maintain said wafer in a spaced-apart relation to said chuck body, wherein each mesa in said plurality of mesas comprises a raised portion of said chuck body that raises above said support surface and a cap, fabricated from a high resistivity dielectric, deposited upon a top surface of the raised portion, said cap having a arcuate profile that minimizes the area of contact between the workpiece and the cap. - View Dependent Claims (11, 12, 13)
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14. A method of fabricating a hybrid Johnsen-Rahbek chuck comprising the steps of:
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providing a chuck body having a support surface; patterning said support surface to form a plurality of raised portions, each having a top surface; and depositing a high resistivity dielectric layer upon each top surface of each raised portion to form a dielectric cap, having an arcuate profile that minimizes the area of contact between a workpiece and the cap. - View Dependent Claims (15, 16, 17, 18)
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19. The method of claim wherein said depositing step further comprises a step of CVD depositing said high resistivity dielectric material.
Specification