Long wavelength vertical cavity surface emitting laser
First Claim
1. A vertical cavity surface emitting laser for emitting long wavelength light, the vertical cavity surface emitting laser comprising:
- a GaAs substrate;
a first mirror stack disposed on the GaAs substrate;
a first cladding region including an InGaP/GaAs material system disposed on the first mirror stack;
a GaInAsN active structure including a nitride based quantum well and a barrier layer, the active structure disposed on the first cladding region;
a second cladding region including an InGaP/GaAs material system disposed on the active structure; and
a second mirror stack disposed on the second cladding region.
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Abstract
A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an InGaP/GaAs material system. The active structure includes a nitride based quantum well and either a GaAsP or a GaAs barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.
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Citations
15 Claims
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1. A vertical cavity surface emitting laser for emitting long wavelength light, the vertical cavity surface emitting laser comprising:
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a GaAs substrate; a first mirror stack disposed on the GaAs substrate; a first cladding region including an InGaP/GaAs material system disposed on the first mirror stack; a GaInAsN active structure including a nitride based quantum well and a barrier layer, the active structure disposed on the first cladding region; a second cladding region including an InGaP/GaAs material system disposed on the active structure; and a second mirror stack disposed on the second cladding region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A vertical cavity surface emitting laser for emitting long wavelength light, the vertical cavity surface emitting laser comprising:
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a GaAs substrate; a first mirror stack including mirror pairs in a GaAs/AlGaAs material system adjacent the GaAs substrate; a GaInAsN active region including an active structure sandwiched between a first InGaP/GaAs cladding region adjacent the first mirror stack and a second InGaP/GaAs cladding region, the active structure including a nitride based quantum well and one of a GaAsP and a GaAs barrier layer; and a second mirror stack disposed on the second InGaP/GaAs cladding region and including mirror pairs in a GaAs/AlGaAs material system. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification