Plasma processing apparatus

• US 5,904,780 A
• Filed: 05/01/1997
• Issued: 05/18/1999
• Est. Priority Date: 05/02/1996
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Tomoyasu, Masayuki
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/847,178
• Time in Patent Office: 747 Days
• Field of Search: 118/723 R, 118/723 E, 118/723 ER, 118/723 I, 118/723 IR, 118/723 AN, 118/723 MR, 118/723 MA, 156/345, 204/298.37, 204/298.16, 315/111.41, 315/111.51
• US Class Current: 118/723.0AN
• CPC Class Codes: H01J 2237/3346 Selectivity
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means

Abstract

In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from gas spouting holes into a process chamber, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. An antenna formed of a solenoidal coil is arranged around the side wall of the process chamber, so as to generate an RF inductive electric field in the process chamber. A plurality of barriers are arranged to extend into the skin-depth region of the plasma from the side wall of the process chamber, so as to limit a mean free path of electrons in the skin-depth region. The barriers decrease density of low energy electrons in the skin depth region, so as to suppress progress of dissociation of the reactive gas, thereby obtaining a predetermined etching selectivity.

Claims

1. A plasma processing apparatus for subjecting a target object to a process, using plasma, comprising:

an airtight process chamber;

a work table arranged in said process chamber for supporting said target object;

an exhaust for exhausting and setting said process chamber in a vacuum condition;

a process gas supply for supplying a process gas into said process chamber, said process gas being capable of providing different activated species along with a progress in its dissociation;

an electric field generator including an RF power supply and an antenna receiving RF power from said RF power supply, said electric field generator generating an RF inductive electric field in said process chamber, said inductive electric field turning said process gas into plasma by means of RF discharge; and

limiting means for limiting a mean free path of electrons in a skin-depth region of said plasma, said limiting means changing electron energy distribution in said skin-depth region of said plasma so as to optimize a dissociated state of said process gas relative to a certain process condition during said process.

2. The apparatus according to claim 1, wherein said limiting means decreases density of low energy electrons in said skin depth region so as to suppress progress of dissociation of said process gas.

3. The apparatus according to claim 1, wherein said limiting means comprises barriers arranged such that electrons in said skin depth region collide with said barriers.

4. The apparatus according to claim 3, wherein said barriers each have a surface expanding perpendicular to a direction in which electrons in said skin-depth region are dominantly moved.

5. The apparatus according to claim 4, wherein said antenna comprises a solenoidal coil antenna arranged around a side wall of said process chamber, and said barriers are arranged to extend into said skin-depth region from said side wall.

6. The apparatus according to claim 4, wherein said antenna comprises a planar antenna arranged on a ceiling of said process chamber, and said barriers are arranged to extend into said skin-depth region from said ceiling.

7. The apparatus according to claim 4, comprising an electrostatic shield arranged between said antenna and said barriers.

8. The apparatus according to claim 4, further comprising baffle plates arranged on distal ends of said barriers for reducing electrons moved toward a center of the plasma.

9. The apparatus according to claim 8, wherein said baffle plates each have a surface expanding parallel to said direction in which electrons in said skin-depth region are dominantly moved.

10. The apparatus according to claim 3, wherein said barriers are made of an insulating material.

11. The apparatus according to claim 3, wherein said barriers are made of a conductive material and are supplied with an electric potential from a DC power supply.

12. The apparatus according to claim 3, further comprising temperature adjusting means for adjusting temperature of said barriers.

13. The apparatus according to claim 1, wherein said process gas comprises an inactive gas and a reactive gas and said process gas supply comprises

means for supplying said inactive gas into said skin-depth region, and

means for supplying said reactive gas directly into a region in said plasma other than said skin-depth region.

14. A plasma etching apparatus for subjecting a target object to an etching process, using plasma, comprising:

an airtight process chamber;

a work table arranged in said process chamber for supporting said target object;

an exhaust for exhausting and setting said process chamber in a vacuum condition;

a process gas supply for supplying a process gas including a reactive gas into said process chamber, said reactive gas being capable of providing different activated species along with a progress in its dissociation;

an electric field generator including an RF power supply and an antenna receiving RF power from said RF power supply, said electric field generator generating an RF inductive electric field in said process chamber, said inductive electric field turning said process gas into plasma by means of RF discharge; and

limiting means for limiting a mean free path of electrons in a skin-depth region of said plasma, said limiting means changing electron energy distribution in said skin-depth region of said plasma so as to optimize a dissociated state of said reactive gas relative to a certain process condition during said etching process.

15. The apparatus according to claim 14, wherein said limiting means decreases density of low energy electrons in said skin depth region so as to suppress progress of dissociation of said reactive gas.

16. The apparatus according to claim 15, wherein said limiting means comprises barriers arranged such that electrons in said skin depth region collide with said barriers.

17. The apparatus according to claim 16, wherein said barriers each have a surface expanding perpendicular to a direction in which electrons in said skin-depth region are dominantly moved.

18. The apparatus according to claim 14, wherein said process gas further comprises an inactive gas and said process gas supply comprises,

means for supplying said inactive gas into said skin-depth region, and

means for supplying said reactive gas directly into a region in said plasma other than said skin-depth region.