Micromechanical acceleration sensor

• US 5,905,203 A
• Filed: 09/30/1996
• Issued: 05/18/1999
• Est. Priority Date: 11/07/1995
• Status: Expired due to Term

• Current Assignee: Temic Telefunken Microelectronic GmbH (Continental AG)
• Original Assignee: Temic Telefunken Microelectronic GmbH (Continental AG)
• Inventors: Weber, Heribert, Schuster, Gunther, Flach, Georg, Nothelfer, Udo
• Primary Examiner(s): CHAPMAN JR, JOHN E
• Application Number:
  US08/723,545
• Time in Patent Office: 960 Days
• Field of Search: 73/514.32, 73/514.18, 73/514.36, 73/514.37, 361/280, 361/283.1
• US Class Current: 73/514.32
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0831 the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration

Abstract

A micromechanical acceleration sensor consists of a first semiconductor wafer and a second semiconductor wafer, where on the first semiconductor wafer first and second electrodes, are provided to create a variable capacitance and the second semiconductor wafer has a movable third electrode, and where on the first semiconductor wafer there is a microelectronic evaluation unit. The moveable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion is of a different length and is opposite one of the first and second electrodes. A closed ring structure is disposed on the surface of the first semiconductor wafer.

Claims

1. Acceleration sensor comprising a first silicon semiconductor wafer;

a microelectronic evaluation unit including first and second electrodes for creating a variable capacitance on a first surface of the first semiconductor wafer;

a second SOI semiconductor wafer having a movable third electrode formed therein, with said second semiconductor wafer being mounted on said first surface of said first semiconductor wafer such that said moveable electrode is disposed opposite and spaced from said first and second electrodes and is electrically connected to said evaluation unit; and

wherein;

said movable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion of the rocker on a respective side of said axis of rotation is of a different length and is opposite one of said first and second electrodes on said first surface of said first semiconductor wafer;

a closed ring structure is disposed on the surface of the silicon wafer; and

, the closed ring structure of the silicon wafer is made of the material of a top metallization layer of the silicon wafer.

2. Acceleration sensor, comprising a silicon semiconductor wafer;

a microelectronic evaluation unit including first and second electrodes for creating a variable capacitance on a first surface of the silicon semiconductor wafer;

an SOI semiconductor wafer having a movable third electrode formed therein, with said SOI semiconductor wafer being mounted on said first surface of said Silicon semiconductor wafer such that said moveable electrode is disposed opposite and spaced from said first and second electrodes and is electrically connected to said evaluation unit; and

wherein;

said movable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion of the rocker on a respective side of said axis of rotation is of a different length and is opposite one of said first and second electrodes on said first surface of said silicon semiconductor wafer;

a closed ring structure is disposed on the surface of the silicon semiconductor wafer; and

, a closed, well conducting ring structure, corresponding to the ring structure of the silicon semiconductor wafer, is arranged on the surface of the SOI semiconductor wafer and is bonded to the ring structure of the silicon semiconductor wafer.

3. Acceleration sensor in accordance with claim 2 wherein each of the first and second electrodes is made of a good conductive material of a metal or polysilicon layer of the silicon semiconductor wafer.

4. Acceleration sensor in accordance with claim 2, wherein the evaluation unit arranged on the silicon semiconductor wafer is made with the help of CMOS technology.

5. Acceleration sensor comprising a silicon semiconductor wafer;

a microelectronic evaluation unit including first and second electrodes for creating a variable capacitance on a first surface of the silicon semiconductor wafer;

an SOI semiconductor wafer having a movable third electrode formed therein, with said SOI semiconductor wafer being mounted on said first surface of said silicon semiconductor wafer such that said moveable electrode is disposed opposite and spaced from said first and second electrodes and is electrically connected to said evaluation unit; and

wherein;

said movable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion of the rocker on a respective side of said axis of rotation is of a different length and is opposite one of said first and second electrodes on said first surface of said silicon semiconductor wafer;

a closed ring structure is disposed on the surface of the silicon semiconductor wafer and on the surface of the SOI semiconductor wafer; and

, the ring structure on the SOI semiconductor wafer and on the silicon semiconductor wafer is made of aluminum or germanium.

6. Acceleration sensor comprising a silicon semiconductor wafer;

a microelectronic evaluation unit including first and second electrodes for creating a variable capacitance on a first surface of the silicon semiconductor wafer;

an SOI semiconductor wafer having a movable third electrode formed therein, with said second semiconductor wafer being mounted on said first surface of said silicon semiconductor wafer such that said moveable electrode is disposed opposite and spaced from said first and second electrodes and is electrically connected to said evaluation unit; and

wherein;

said movable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion of the rocker on a respective side of said axis of rotation is of a different length and is opposite one of said first and second electrodes on said first surface of said silicon semiconductor wafer;

a closed ring structure is disposed on the surface of the silicon semiconductor wafer; and

, spacers are arranged between the SOI semiconductor wafer and the silicon semiconductor wafer within the ring structure.