Gallium nitride compound semiconductor light-emitting device

• US 5,905,275 A
• Filed: 06/16/1997
• Issued: 05/18/1999
• Est. Priority Date: 06/17/1996
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nunoue, Shinya, Yamamoto, Masahiro
• Primary Examiner(s): Guay, John
• Application Number:
  US08/876,739
• Time in Patent Office: 701 Days
• Field of Search: 257/76, 257/94-99, 257/103, 372/44-45, 372/50
• US Class Current: 257/95
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A gallium nitride compound semiconductor light-emitting device uses a sapphire substrate as a support and has n- and p-type electrodes on the top and bottom surfaces. A trench is formed in the sapphire substrate. This trench has two side wall surfaces which extend from the top surface to the bottom surface and so incline as to converge downward. A buffer layer is formed on the sapphire substrate. A gallium nitride compound semiconductor multiple layer having an n-type layer and a p-type layer are formed on the buffer layer. This semiconductor multiple layer has two side portions arranged along the two side wall surfaces of the trench and a central portion positioned between these two side portions and formed integrally with the two side portions. N- and p-type electrodes are so formed as to oppose each other on the two sides of the central portion of the semiconductor multiple layer.

Claims

1. A gallium nitride compound semiconductor light-emitting device comprising:

a sapphire substrate having a trench with two side wall surfaces which extend from a top surface to a bottom surface and incline so as to converge downward;

a gallium nitride compound semiconductor multiple layer supported by said sapphire substrate and having an n-type layer and a p-type layer, said semiconductor multiple layer having two side portions arranged along said two side wall surfaces and a central portion positioned between said two side portions and formed integrally with said two side portions; and

first and second electrodes connected to top and bottom surfaces, respectively, of said semiconductor multiple layer so that said first and second electrodes are positioned on top and bottom sides of said device.

2. A device according to claim 1, wherein top and bottom surfaces of said central portion of said semiconductor multiple layer are positioned between the top and bottom surfaces of said sapphire substrate.

3. A device according to claim 1, wherein an angle of said two side wall surfaces with respect to the bottom surface of said central portion of said semiconductor multiple layer is 30°

to 90°

.

4. A device according to claim 1, wherein said trench has a rectangular planar shape, said two side wall surfaces are arranged on two opposing sides of said trench, and said semiconductor multiple layer has cleavage surfaces on two other opposing sides.

5. A device according to claim 1, wherein said first and second electrodes are so formed as to oppose each other on two sides of said central portion of said semiconductor multiple layer.

6. A device according to claim 1, further comprising a buffer layer formed between said sapphire substrate and said semiconductor multiple layer.

7. A device according to claim 6, wherein said buffer layer consists essentially of a material selected from the group consisting of ZnO, GaN, AlN, GaAlN, LiAlO₂, LiGaO₂, MgAl₂ O₄, and SiC.

8. A device according to claim 1, further comprising a support substrate adhered to said sapphire substrate so as to cover said trench.

9. A device according to claim 8, wherein said support substrate consists essentially of a material selected from the group consisting of Si, SiC, ZnO, ZnSe, BN, AlN, and GaAs.

10. A device according to claim 8, wherein

said semiconductor multiple layer has an outer portion positioned outside said trench and formed integrally with said central portion and said two side portions,

said support substrate is conductive and connected to said outer portion of said semiconductor multiple layer, and

said first electrode is formed on said support substrate.

11. A gallium nitride compound semiconductor light-emitting device comprising:

a sapphire substrate in which a contact hole is formed;

a buried layer formed in said contact hole and consisting essentially of a material having a lattice constant close to a lattice constant of a gallium nitride compound semiconductor;

a gallium nitride compound semiconductor multiple layer formed on said sapphire substrate so as to cover said contact hole and having an n-type layer and a p-type layer; and

first and second electrodes connected to top and bottom surfaces, respectively, of said semiconductor multiple layer so that said first and second electrodes are positioned on top and bottom sides of said device, said second electrode being connected to said semiconductor multiple layer through said contact hole.

12. A device according to claim 11, wherein said buried layer consists essentially of a material selected from the group consisting of ZnO, GaN, AlN, GaAlN, LiAlO₂, LiGaO₂, MgAl₂ O₄, and SiC.