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Semiconductor device with high voltage protection

  • US 5,905,287 A
  • Filed: 04/17/1997
  • Issued: 05/18/1999
  • Est. Priority Date: 04/25/1996
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a plurality of pads for performing signal inputting and outputting, said pads comprising an input pad and an output pad;

    an analog switch, which is provided with P type and N type MOS transistors for transmitting signals among said pads, said N type MOS transistor comprising first and second N type diffusion layers separated by a gate of said N type MOS transistor, said first N type diffusion layer connected to said input pad and said second N type diffusion layer connected to said output pad; and

    a protective circuit, which is provided with P type and N type protective MOS transistors for protecting said analog switch,wherein said analog switch is further provided with an N type dummy transistor, said N type dummy transistor being formed by using said first N type diffusion layer as a drain and connecting a gate and a source to a ground potential.

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