Broad range ion implanter

• US 5,907,158 A
• Filed: 05/14/1997
• Issued: 05/25/1999
• Est. Priority Date: 05/14/1997
• Status: Expired due to Fees

• Current Assignee: Superior Design, Inc.
• Original Assignee: Ebara Corporation
• Inventors: Purser, Kenneth H., Noblitt, Gaylord C. III, Wittkower, Andrew, Glavish, Hilton F., Nasser-Ghodsi, Mehran
• Primary Examiner(s): NGUYEN, KIET TUAN
• Application Number:
  US08/856,410
• Time in Patent Office: 741 Days
• Field of Search: 250/492.21, 250/423 R, 250/348
• US Class Current: 250/492.21
• CPC Class Codes: H01J 37/3171 for ion implantation

Abstract

Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.

Claims

1. Ion implanter comprising a first ion generating system for implanting ions having energies of approximately 3-80 keV, and a second ion generating system for implanting ions having energies of approximately 80-3,000 keV, the first and second ion generating systems coupled to a single scanning end station.

2. The ion implanter of claim 1 wherein the scanning end station employs magnetic scanning.

3. The ion implanter of claim 1 wherein the scanning end station employs electrostatic scanning.

4. The ion implanter of claim 1 wherein the scanning end station employs mechanical scanning.

5. The ion implanter of claim 1 wherein one of the two independent ion generating systems employs at least one tandem accelerator.

6. The ion implanter of claim 1 wherein one of the ion generating systems employs at least one linac-type accelerator.

7. The ion implanter of claim 1 wherein the implanter can simultaneously implant ions in multiple wafers.

8. The ion implanter of claim 1 utilizing a neutral beam accelerator.