Method for forming a semiconductor sensor device

• US 5,907,765 A
• Filed: 06/24/1996
• Issued: 05/25/1999
• Est. Priority Date: 06/30/1995
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Guillemet, Jean Paul, Peyre Lavigne, Andre, Lescouzeres, Lionel
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US08/669,013
• Time in Patent Office: 1,065 Days
• Field of Search: 438/49, 438/52, 438/53, 438/702, 438/703, 438/FOR 412, 438/FOR 432, 438/FOR 438, 257/414, 257/522
• US Class Current: 438/49
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid

Abstract

A method for forming a semiconductor sensor device comprises providing a substrate (4) and forming a sacrificial layer (18) over the substrate. The sacrificial layer (18) is then patterned and etched to leave a portion (19) on the substrate (4). A first isolation layer (6) is formed over the substrate (4) and portion (19) of the sacrificial layer and a conductive layer (12), which provides a heater for the sensor device, is formed over the first isolation layer (6). The portion (19) of the sacrificial layer is then selectively etched to form a cavity (10) between the first isolation layer (6) and the substrate (4), the cavity (10) providing thermal isolation between the heater and the substrate.

Claims

1. A method for forming a semiconductor sensor device comprising the steps of:

providing a substrate;

forming a sacrificial layer over the substrate;

removing part of the sacrificial layer to leave a portion on the substrate;

forming a first isolation layer over the substrate and the portion of the sacrificial layer;

forming a conductive layer over the first isolation layer;

selectively etching the portion of the sacrificial layer to form a cavity between the first isolation layer and the substrate, the cavity providing thermal isolation therebetween;

forming a second isolation layer over the conductive layer; and

forming a chemically sensitive layer over the second isolation layer.

2. A method for forming a semiconductor sensor device in accordance with claim 1 wherein the removing step comprises patterning and etching the sacrificial layer to leave first and second portions on the substrate, and wherein the selectively etching step comprises selectively etching the first and second portions of the sacrificial layer to provide first and second cavities between the first isolation layer and the substrate.

3. A method for forming a semiconductor sensor device in accordance with claim 1 wherein the selective etching step uses an isotropic selective etch of the portion of the sacrificial layer.

4. A method for forming a semiconductor sensor device in accordance with claim 1 wherein the selective etching step uses a liquid etchant.

5. A method for forming a semiconductor sensor device in accordance with claim 1 wherein the conductive layer comprises polysilicon material, the first isolation layer comprises silicon nitride and the selective etch step comprises etching the sacrificial layer with liquid hydrogen fluoride.

6. A method for forming a semiconductor sensor device in accordance with claim 1 wherein the material from which the sacrificial layer is formed is selected from the group of silicon dioxide, polyimide and SOG.

7. A method for forming a semiconductor sensor device comprising the steps of:

providing a substrate;

forming a first isolation layer over the substrate;

removing part of the first isolation layer and substrate to form a trench;

filling the trench with sacrificial material;

forming a conductive layer over the first isolation layer and sacrificial material in the trench;

selectively etching the sacrificial material in the trench to form a cavity between the conductive layer and the substrate to provide thermal isolation therebetween;

forming a second isolation layer over the conductive layer; and

forming a chemically sensitive layer over the second isolation layer.

8. A method for forming a semiconductor sensor device in accordance with claim 7 wherein the removing part of the first isolation layer and substrate step comprises the step of etching the first isolation layer and substrate to form first and second trenches, and wherein the step of selectively etching comprises the step of selectively etching sacrificial material in the first and second trenches to form first and second cavities between the conductive layer and the substrate.

9. A method for forming a semiconductor sensor device in accordance with claim 7 wherein the method further comprises the step of forming a third isolation layer underneath the conductive layer.

10. A method for forming a semiconductor sensor device in accordance with claim 7 wherein the selective etching step uses an isotropic selective etch of the sacrificial material in the trench.

11. A method for forming a semiconductor sensor device in accordance with claim 7 wherein the selective etching step uses a liquid etchant.

12. A method for forming a semiconductor sensor device in accordance with claim 7 wherein the conductive layer comprises polysilicon material, the first isolation layer comprises silicon nitride and the selective etch step comprises etching the sacrificial material in the trench with liquid hydrogen fluoride.

13. A method for forming a semiconductor sensor device in accordance with claim 7 wherein the material from which the sacrificial layer is formed is selected from the group of silicon dioxide, polyimide and SOG.