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Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance

DC
  • US 5,907,776 A
  • Filed: 07/11/1997
  • Issued: 05/25/1999
  • Est. Priority Date: 07/11/1997
  • Status: Expired due to Term
First Claim
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1. A method of forming a semiconductor structure comprising the steps of:

  • (a) providing a substrate having a major surface;

    (b) forming at least one trench in said substrate;

    (c) forming a body region of a first conductivity type in said substrate, said body region having a diffusion boundary in said substrate;

    (d) forming a source region of a second conductivity type in said body region; and

    (e) compensating a portion of said body region by implanting material of said second conductivity type in said body region, said portion being proximal to said source region and spaced from said diffusion boundary of said body region and said major so as to reduce the impurity concentration of said first conductivity type in said portion of said body region.

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