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Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation

  • US 5,907,780 A
  • Filed: 06/17/1998
  • Issued: 05/25/1999
  • Est. Priority Date: 06/17/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming an integrated circuit, comprising:

  • forming a metal oxide layer above a semiconductor substrate;

    supercooling a gas comprising silicon atoms to form a cluster of silicon atoms; and

    implanting the cluster of silicon atoms into the metal oxide layer.

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