Semiconductor device fabrication
First Claim
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1. A method of semiconductor integrated circuit fabrication comprising:
- embedding atomic nitrogen into a substrate such that said atomic nitrogen extends to a top surface of said substrate;
forming a dielectric layer upon said substrate after said embedding step;
forming a material layer upon said dielectric layer;
exposing said material layer to a dopant species;
patterning said material layer to form a gate.
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Abstract
A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide growth. The nitrogen later diffuses upward into the gate oxide and blocks subsequent ion implanted gate dopants from penetrating to the substrate. Low dosages of atomic nitrogen implantation, while not significantly affecting gate oxide growth rate, produce significant improvements in the damage immunity of thin gate oxides.
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Citations
12 Claims
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1. A method of semiconductor integrated circuit fabrication comprising:
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embedding atomic nitrogen into a substrate such that said atomic nitrogen extends to a top surface of said substrate; forming a dielectric layer upon said substrate after said embedding step; forming a material layer upon said dielectric layer; exposing said material layer to a dopant species; patterning said material layer to form a gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification