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Semiconductor device fabrication

  • US 5,908,312 A
  • Filed: 05/28/1997
  • Issued: 06/01/1999
  • Est. Priority Date: 05/07/1996
  • Status: Expired due to Term
First Claim
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1. A method of semiconductor integrated circuit fabrication comprising:

  • embedding atomic nitrogen into a substrate such that said atomic nitrogen extends to a top surface of said substrate;

    forming a dielectric layer upon said substrate after said embedding step;

    forming a material layer upon said dielectric layer;

    exposing said material layer to a dopant species;

    patterning said material layer to form a gate.

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