Ceramic electrostatic chuck and method of fabricating same
First Claim
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1. A multi-layered ceramic electrostatic chuck for retaining a substrate in a process chamber comprising:
- a first layer having an upper surface,an electrode disposed within said first layer,a second layer disposed upon the upper surface of the first layer, anda third layer disposed on top of the second layer wherein the second layer alters a resistivity of the first layer.
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Abstract
Multi-layered, ceramic electrostatic chuck for retaining a substrate in a process chamber is provided. The chuck comprises a first layer having a top surface, a second layer disposed on the top surface of the first layer, and a third layer disposed on top of the second layer. The second layer alters the resistivity of the third layer during the fabrication process of the chuck. As such, the resistivity of the chuck is reduced to a value that facilitates establishment of the Johnsen-Rahbek effect and promotes wafer processing at room temperature.
34 Citations
19 Claims
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1. A multi-layered ceramic electrostatic chuck for retaining a substrate in a process chamber comprising:
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a first layer having an upper surface, an electrode disposed within said first layer, a second layer disposed upon the upper surface of the first layer, and a third layer disposed on top of the second layer wherein the second layer alters a resistivity of the first layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating a multi-layered ceramic electrostatic chuck for retaining a substrate in a process chamber, the chuck having a first layer having an upper surface, a second layer disposed upon the upper surface of the first layer, and a third layer disposed on top of the second layer wherein the second layer alters a resistivity of the first layer, the method comprising the steps of:
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providing the first layer, disposing an electrode within said first layer disposing the second layer on a bottom surface of the third layer, debinderizing the first layer, disposing the third layer with disposed second layer upon the debinderized first layer, and sintering the multi-layered chuck. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A multi-layered ceramic electrostatic chuck for retaining a substrate in a process chamber of a semiconductor wafer process system comprising:
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a first layer of pre-sintered aluminum nitride having an upper surface, an electrode disposed within said first layer, a second dopant layer of carbon contacting the upper surface of the first layer of pre-sintered aluminum nitride, and a third layer of post-sintered aluminum nitride in the form of a disc disposed on top of the second dopant layer of carbon wherein the second dopant layer of carbon is sputtered onto a bottom surface of the third layer post-sintered aluminum nitride disc and alters a resistivity of the first layer of pre-sintered aluminum nitride when the chuck is sintered at a temperature in the range of approximately 1900°
-2000°
C.
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Specification