×

Method for fabricating a semiconductor device having a refractory metal pillar for electrical connection

  • US 5,910,020 A
  • Filed: 12/18/1996
  • Issued: 06/08/1999
  • Est. Priority Date: 12/18/1995
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for fabricating a semiconductor device, said method comprising the steps of:

  • forming a first insulation film on a first wiring layer formed on a semiconductor substrate;

    forming a second insulation film on said first insulation film;

    forming a third insulation film on said second insulation film;

    forming a hole through said first, second and third insulation films to expose said first wiring layer at its bottom;

    forming a refractory metal pillar structure by filling in said hole with a refractory metal;

    forming a fourth insulation film to cover exposed surfaces of said pillar structure and said third insulation film;

    selectively removing portions of said third and fourth insulation films to form an opening exposing a side and a top surface of said refractory metal pillar structure; and

    filling in said opening with a conductive wiring material to form a second wiring layer to electrically connect with said refractory metal pillar.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×