Low capacitance power VFET method and device

• US 5,910,665 A
• Filed: 12/17/1996
• Issued: 06/08/1999
• Est. Priority Date: 12/29/1995
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Yang, Jau-Yuann, Plumton, Donald Lynn
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US08/768,357
• Time in Patent Office: 903 Days
• Field of Search: 257/330, 257/331, 257/332, 257/254, 257/285, 257/287
• US Class Current: 257/284
• CPC Class Codes: H01L 21/28587 characterised by the sectional shape, e.g. T, inverted T
• CPC Class Codes: H01L 29/1066 Gate region of field-effect devices with PN junction gate
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/32 the imperfections being within the semiconductor body
• CPC Class Codes: H01L 29/42316 for field-effect transistors
• CPC Class Codes: H01L 29/66454 Static induction transistors [SIT], e.g. permeable base transistors [PBT]
• CPC Class Codes: H01L 29/66924 with an active layer made of a group 13/15 material H01L29/66446 takes precedence
• CPC Class Codes: H01L 29/7722 using static field induced regions, e.g. SIT, PBT
• CPC Class Codes: H01L 29/8083 Vertical transistors SIT H01L29/7722

Abstract

A method and structure for a vertical FET transistor device (VFET) is described for a lower junction capacitance VFET to decrease the switching power loss and achieve increased current capacity and/or deceased thermal dissipation. In a preferred embodiment, the gate capacitance is reduced over prior art methods and structures by etching to the gate 14 and directly contacting the p+ gate with a p-ohmic contact 24. In another embodiment, the area under the gate contact 22 is implanted with a "trim" dopant, where the trim dopant acts to reduce the doping of the drainlayer thereby reducing the capacitance. In another embodiment, the area under the exposed gate contact 22 is isolated by ion damaged to reduce the doping/conductivity of the n- drain layer below a portion of the gate layer to reduce the gate-to-drain capacitance.

Claims

1. A microelectronic structure comprising:

a. a n-type layer over a substrate;

b. a p-type carbon doped gate grid structure in said n-type layer which form channels between a source and a drain portion of said n-type layer;

c. a gate contact to said gate structure;

d. a more electrically insulative region of said n-type layer which forms a gate isolation region in said n-type layer below said gate contact to said gate structure;

e. a source contact to said source; and

f. a drain contact to said drain.

2. The structure of claim 1, wherein said gate contact to said gate grid structure is of a metal having Schottky effects with said n-type layer in said channels.

3. The structure of claim 1, wherein said gate isolation region in said n-type layer further comprises a trim doping, wherein said trim dopant is a counter doping to reduce the doping level of the n-type layer in said isolation region to be more insulative.

4. The structure of claim 3, wherein said trim doping is Be.

5. The structure of claim 1, further wherein said gate isolation region in said first n-type layer is an ion damaged area.

6. The structure of claim 5, wherein said ion damaged area is B damaged.

7. The structure of claim 5, wherein said ion damaged area is H damaged.

8. The structure of claim 1, wherein a n+ cap layer is formed over said second drain/source layer.

9. The structure of claim 1, wherein said gate contact is AuZn.

10. A microelectronic structure comprising:

a. an n-type first drain/source layer over a substrate;

b. a p-type carbon doped gate structure in said n-type first drain/source layer;

c. a n-type second drain/source layer over said gate structure;

d. a p-ohmic metal gate contact to said gate structure; and

e. a more electrically insulative region of said n-type layer which forms a gate isolation region in said first source/drain layer below said p-ohmic metal contact to said gate structure.

11. The structure of claim 10, wherein said gate contact to said gate structure is of a metal having Schottky effects with said n-type layer in said channels.

12. The structure of claim 11, wherein said metal to form said gate contact is TiPtAu.

13. The structure of claim 10, wherein said gate isolation region in said first drain/source layer further comprises a trim doping, wherein said trim dopant is a counter doping to reduce the doping level of the n-type layer in said isolation region to be more insulative.

14. The structure of claim 12, wherein said trim doping is Be.

15. The structure of claim 10, further wherein said gate isolation region in said first drain/source layer is an ion damaged area.

16. The structure of claim 14, wherein said ion damaged area is B damaged.

17. The structure of claim 14, wherein said ion damaged area is H damaged.

18. The structure of claim 10, wherein a cap layer is formed over said-second drain/source layer.

19. The structure of claim 10, wherein said first drain/source layer, said gate structure, and said second drain/source layer are GaAs.