Semiconductor device and method of making the same
First Claim
1. A semiconductor device having a semiconductor substrate having a terminal, and a protection circuit, said protection circuit comprising:
- a field-effect transistor (FET) comprising at least one first diffusion layer of a first conductive-type formed on a region of said semiconductor substrate, said region being a second conductive-type region, said at least one diffusion layer being connected to said terminal, said FET further comprising at least one second diffusion layer of said first conductive-type connected to an electrode, said electrode having a constant electric potential and said FET having a first portion of said first diffusion layer as a drain, a first portion of said second diffusion layer as a source and a gate electrode connected to said electrode; and
a bipolar transistor in which a second portion of said first diffusion layer is a predetermined distance from a second portion of said second diffusion layer, wherein said source is positioned between said second portion of the first diffusion layer and said first portion of the first diffusion layer;
said bipolar transistor including said second portion of said first diffusion layer as a collector, said second portion of said second diffusion layer as an emitter, and said second conductive-type region as a base.
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Accused Products
Abstract
A semiconductor device includes a metal terminal provided on a semiconductor substrate and a protection element. The protection element includes an insulated gate field-effect transistor. The transistor has a first diffusion layer of a reverse conductive-type formed on one conductive type region of the semiconductor substrate and connected to the metal terminal, as its source. The transistor also includes a second diffusion layer of a reverse conductive-type connected to an electrode wire having a constant electric potential, as its source, and has a gate electrode connected to the electrode wire. A lateral bipolar transistor includes a third diffusion layer of a reverse conductive-type formed with a constant spaced distance with respect to the second diffusion layer and connected to the metal terminal, as its collector, and also has the second diffusion layer as its emitter, and furthermore has the one conductive-type region as its base. Thus, a semiconductor device is protected from an electrostatic discharge (ESD) breakdown device even though having high density and a high operating speed.
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Citations
17 Claims
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1. A semiconductor device having a semiconductor substrate having a terminal, and a protection circuit, said protection circuit comprising:
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a field-effect transistor (FET) comprising at least one first diffusion layer of a first conductive-type formed on a region of said semiconductor substrate, said region being a second conductive-type region, said at least one diffusion layer being connected to said terminal, said FET further comprising at least one second diffusion layer of said first conductive-type connected to an electrode, said electrode having a constant electric potential and said FET having a first portion of said first diffusion layer as a drain, a first portion of said second diffusion layer as a source and a gate electrode connected to said electrode; and a bipolar transistor in which a second portion of said first diffusion layer is a predetermined distance from a second portion of said second diffusion layer, wherein said source is positioned between said second portion of the first diffusion layer and said first portion of the first diffusion layer; said bipolar transistor including said second portion of said first diffusion layer as a collector, said second portion of said second diffusion layer as an emitter, and said second conductive-type region as a base. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device including a semiconductor substrate having a terminal, and a protection circuit, said protection circuit comprising:
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a field-effect transistor (FET) including a first diffusion layer of a first conductive-type formed on a region of said semiconductor substrate, said region being a second conductive-type region, said first diffusion layer being connected to said terminal, said first diffusion layer forming a drain of said FET, and said FET further including a second diffusion layer of said first conductive-type connected to an electrode, said electrode having a constant electric potential, said second diffusion layer forming a source of said FET, said FET further including a gate electrode connected to said electrode, and a bipolar transistor including a third diffusion layer of said first conductive-type positioned a predetermined distance from said second diffusion layer and said bipolar transistor being connected to said terminal, wherein said source is positioned between said third diffusion layer and said first diffusion layer, said terminal comprising a collector of said bipolar transistor, said second diffusion layer comprising an emitter of said bipolar transistor, and said second conductive-type region comprising a base of said bipolar transistor. - View Dependent Claims (13)
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14. A semiconductor device, comprising:
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a semiconductor substrate; a bipolar transistor formed on said substrate and including first and second diffusion layers, formed in said semiconductor substrate, for forming a collector and an emitter, respectively, a portion of said semiconductor substrate forming a base of said bipolar transistor, said collector being connected to a metal terminal and said emitter being connected to an electrode having a constant electric potential; and a field effect transistor (FET), connected to said substrate, for actuating said bipolar transistor upon a predetermined voltage being applied to said device, said FET including a third diffusion layer as a drain, said second diffusion layer as a source and coupled to said electrode, and a gate electrode coupled to said electrode; wherein said source is positioned between said third diffusion layer and said first diffusion layer. - View Dependent Claims (15, 16, 17)
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Specification