Silicon-doped titanium wetting layer for aluminum plug

• US 5,911,113 A
• Filed: 03/18/1997
• Issued: 06/08/1999
• Est. Priority Date: 03/18/1997
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ding, Peijun, Xu, Zheng, Yao, Gongda, Kieu, Hoa
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/820,512
• Time in Patent Office: 812 Days
• Field of Search: 438/628, 438/630, 438/644, 438/649, 438/656, 438/683, 438/688, 438/FOR 360, 438/648, 438/682, 438/655, 438/654, 257/753, 257/754, 257/764, 257/770, 204/192.17, 204/298.13
• US Class Current: 438/649
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed "warm", i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.

Claims

1. A method of fabricating a metal plug in a semiconductor workpiece, comprising the sequential steps of:

providing a semiconductor workpiece which includes a first conductor or semiconductor layer and a dielectric layer overlying the first layer, wherein

the dielectric layer has an exposed outer surface, and

the dielectric layer includes a hole having a bottom at the first layer and having a side wall extending from the first layer to an aperture at the exposed outer surface;

depositing a silicon-doped titanium layer having a concentration of silicon no greater than 20% by weight, wherein the silicon-doped titanium layer is deposited so as to cover the side wall of the hole; and

depositing said metal over the silicon-doped titanium layer;

wherein the step of depositing said metal is initiated while the side wall of the hole remains covered by said silicon-doped titanium layer having an atomic molar ratio of titanium to silicon greater than 1;

2.

2. A method according to claim 1, wherein said concentration of silicon is in the range of 5% to 10% by weight.

3. A method according to claim 1, wherein the step of depositing a silicon-doped titanium layer further comprises depositing the silicon-doped titanium layer with an atomic molar ratio of titanium to silicon of at least 5.

4. A method according to claim 1, wherein the silicon-doped titanium layer is not annealed prior to the step of depositing said metal.

5. A method according to claim 1, wherein the step of depositing said metal comprises depositing an amount of said metal sufficient to substantially fill the hole.

6. A method according to claim 1, wherein the metal deposition is continued long enough to fill the hole.

7. A method according to claim 1, wherein said metal is aluminum.

8. A method according to claim 7, wherein the titanium depositing step comprises sputter deposition using a titanium target.

9. A method according to claim 8, wherein the titanium target contains silcon.

10. A method according to claim 9, wherein the target contains 0.1% to 20% wt silicon.

11. A method according to claim 9, wherein the target contains 5% to 10% wt silicon.

12. A method according to claim 8, further comprising the step of, before the titanium depositing step:

sputter depositing a layer of titanium nitride doped with silicon over the bottom of the hole using the same titanium target as in the titanium depositing step, wherein the titanium nitride deposition and the titanium deposition are performed inside the same sputter deposition chamber.

13. A method according to claim 1, wherein the step of depositing a silicon-doped titanium layer further comprises depositing the silicon-doped titanium layer with a concentration of silicon low enough so that no TiSi₂ forms in the silicon-doped titanium layer.