Plasma immersion implantation with pulsed anode

• US 5,911,832 A
• Filed: 01/09/1997
• Issued: 06/15/1999
• Est. Priority Date: 10/10/1996
• Status: Expired due to Fees

• Current Assignee: Axcelis Technologies Incorporated
• Original Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.)
• Inventors: Shao, Jiqun, Denholm, A. Stuart
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/780,808
• Time in Patent Office: 887 Days
• Field of Search: 118/723 E, 118/50.1, 156/345, 204/298.02, 204/298.31
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation

Abstract

Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted and includes a conductive inner wall portion in proximity to the chamber interior. A conductive workpiece support extends into an interior region of the implantation chamber. A conductive electrode is disposed within said implantation chamber relative to said conductive workpiece support to allow workpieces to be placed on the workpiece support in a region between the support and the conductive electrode. Gas molecules are injected into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces. The gas molecules are ionized near an implant surface of the workpieces. Control circuitry pulses the conductive electrode to a positive potential relative to the conductive workpiece support, the one or more workpieces, and the conductive wall portion of the implantation chamber. The control circuitry includes a voltage source that provides an electric field through which the ionized gas molecules accelerate before striking the implantation surfaces of the one or more workpieces.

Claims

1. Apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface comprising:

a) an implantation chamber defining a chamber interior into which one of more workpieces can be inserted and including a conductive inner wall portion in proximity to the chamber interior;

b) a conductive workpiece support that extends into an interior region of the implantation chamber;

c) a conductive electrode disposed within said implantation chamber, relative to said conductive workpiece support, as to allow workpieces to be placed on the workpiece support in a region between the support and the conductive electrode;

d) means for injecting neutrally charged gas molecules into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces;

e) means for ionizing the gas molecules so that an ionized gas is formed near the implantation surfaces of said one or more workpieces;

f) means for maintaining the conductive workpiece support and the conductive wall portion of the ion implantation chamber at a same reference potential;

g) control circuitry for electrically pulsing the conductive electrode to a positive potential relative to the conductive workpiece support, the one or more workpieces, and the conductive wall portion of the implantation chamber;

said control circuitry including a voltage source that provides and electric field through which the ionized gas molecules accelerate before striking the implantation surfaces of the one or more workpieces.

2. The apparatus of claim 1 wherein the voltage source includes a solid state switch for starting the voltage pulse upon switch closing and stopping the voltage pulse upon switch opening.

3. The apparatus of claim 1 further comprising a dielectric to substantially shield said electrode so that electric field lines associated with said electrode pass through the dielectric and not into said ionized gas in proximity to said electrode.

4. The apparatus of claim 3 further comprising a casing to substantially shield an external portion of said dielectric.

5. The apparatus of claim 4 further compromising means for maintaining said casing at a reference potential relative to said positive potential.

6. The apparatus of claim 1 wherein the interior chamber defines a predetermined amount of surface area and wherein the conductive workpiece support includes a dielectric for shielding a surface of the support, thereby reducing the predetermined amount of surface area within said implantation chamber having a negative potential relative to said electrode and to which the ionized gas molecules are implanted.

7. The apparatus of claim 6 further comprising a dielectric to shield a surface of the conductive inner wall portion of the implantation chamber, thereby reducing the predetermined amount of surface area within said implantation chamber having a negative potential relative to said electrode and to which the ionized gas molecules are implanted.

8. The apparatus of claim 6 further comprising a dielectric to shield an internal region of said conductive inner wall portion so that ionized gas molecules striking and secondary electrons leaving a surface of the region cause the dielectric to attain about the same positive potential as that of said electrode, thereby reducing the predetermined amount of surface area within said implantation chamber having a negative potential relative to said electrode and to which the ionized gas molecules are implanted.

9. The apparatus of claim 6 wherein the implantation chamber further includes an insulator to separate an ion source from the conductive inner wall portion of said implantation chamber and wherein the ion source is electrically pulsed to a relatively positive potential about the same as that of said electrode, thereby reducing the predetermined amount of surface area within said implantation chamber having a negative potential relative to said electrode and to which the ionized gas molecules are implanted.

10. The apparatus of claim 6 further comprising a negatively biased metallic grid spaced from the conductive inner wall portion of the implantation chamber to shield the conductive inner wall portion, thereby reducing the predetermined amount of surface area within said implantation chamber having a negative potential relative to said electrode and to which the ionized gas molecules are implanted.

11. The apparatus of claim 10 further comprising means for relatively biasing a surface of said metallic grid so that secondary electrons produced at the conductive inner wall portion are substantially suppressed, thereby reducing the predetermined amount of surface area within said implantation chamber having a negative potential relative to said electrode and to which the ionized gas molecules are implanted.

12. The apparatus of claim 1 further comprising an ultraviolet source for causing ultraviolet energy to pass through a region of the implantation chamber near the one or more workpieces.