Plasma processing apparatus

• US 5,911,852 A
• Filed: 06/14/1996
• Issued: 06/15/1999
• Est. Priority Date: 06/15/1995
• Status: Expired due to Term

• Current Assignee: Sumitomo Metal Industries Limited (Nippon Steel Corporation), Renesas Electronics Corporation
• Original Assignee: Sumitomo Metal Industries Limited (Nippon Steel Corporation)
• Inventors: Iio, Kouichi, Komachi, Kyouichi, Akimoto, Takeshi, Katayama, Katsuo
• Primary Examiner(s): Wortman, Donna C.
• Assistant Examiner(s): Brumback, Brenda G.
• Application Number:
  US08/663,640
• Time in Patent Office: 1,096 Days
• Field of Search: 156/345, 118/723 MW, 118/723 ME
• US Class Current: 156/345.41
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32229 Waveguides
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H01J 37/32266 Means for controlling power transmitted to the plasma

Abstract

A plasma processing apparatus includes a conductive thin film provided on a surface of a microwave introducing member which is exposed to a processing chamber, in which an object to be processed is placed. The conductive thin film is provided at the entire portion excluding a transmission portion, through which microwaves pass into the processing chamber. The conductive thin film is grounded to act as an electrode.

Claims

1. A plasma processing apparatus, comprising:

a processing chamber in which an object to be processed is placed;

means for supplying process gas into the processing chamber;

means for generating microwaves to be used for exciting plasma in the processing chamber;

a microwave introducing member having a transmission portion through which the microwaves pass into the processing chamber;

a conductive thin film provided on a surface of the microwave introducing member which is exposed to the processing chamber, the conductive thin film being provided with microwave transmission opening and being grounded to act as an electrode, and

a high frequency power supply which applies high frequency voltage to the object, so that plasma is generated in the processing chamber with the microwaves supplied through the microwave introducing member.

2. The plasma processing apparatus according to claim 1, wherein, the conductive thin film is formed by a plasma sputtering technique.

3. The plasma processing apparatus according to claim 1, wherein, the conductive thin film comprises a material selected from SiC, Si, C and Al.

4. The plasma processing apparatus according to claim 1, wherein, the conductive thin film is formed to have a thickness of 10 μ

m to 100 μ

m.

5. A plasma processing apparatus, comprising:

a processing chamber in which an object to be processed is placed;

means for supplying process gas into the processing chamber;

means for generating microwaves to be used for exciting plasma in the processing chamber;

a microwave introducing member having a transmission portion through which the microwaves pass into the processing chamber;

an insulation thin film provided on a surface of the microwave introducing member which is exposed to the processing chamber;

a conductive thin film provided on a surface of the microwave introducing member, the conductive thin film being provided with microwave transmission openings and being grounded to act as an electrode, and

a high frequency power supply which applies high frequency voltage to the object, so that plasma is generated in the processing chamber with the microwaves supplied through the microwave introducing member.

6. The plasma processing apparatus according to claim 5, wherein, the insulation thin film comprises an inorganic oxide material.

7. The plasma processing apparatus according to claim 5, wherein, the insulation thin film comprises an inorganic nitride material.

8. The plasma processing apparatus according to claim 5, wherein, the insulation thin film is formed to have a thickness of 10 μ

m to 100 μ

m.

9. The plasma processing apparatus according to claim 5, wherein, the conductive thin film is formed by a plasma sputtering technique.

10. The plasma processing apparatus according to claim 5, wherein, the conductive thin film comprises a material selected from SiC, Si, C and Al.

11. The plasma processing apparatus according to claim 5, wherein, the conductive thin film is formed to have a thickness of 10 μ

m to 100 μ

m.

12. The plasma processing apparatus according to claim 5, wherein, the insulation thin film is provided only at the transmission portion.

13. The plasma processing apparatus according to claim 5, wherein, the insulation thin film is provided in the microwave transmission openings and over the conductive thin film.

14. The plasma processing apparatus according to claim 13, wherein,

the conductive thin film and the insulation thin film are formed by the steps of:

(1) providing the conductive thin film on the surface of the microwave introducing member; and

(2) providing the insulation thin film over the entire surface of the microwave introducing member.

15. The plasma processing apparatus according to claim 13, wherein, the conductive thin film and the insulation thin film are formed by the steps of:

(1) providing the conductive thin film on the surface of the microwave introducing member; and

(2) providing a first insulation thin film in the microwave transmission openings having the same thickness as the conductive thin film;

(3) providing a second insulation film on the conductive thin film.

16. A microwave-plasma etching apparatus, comprising:

reaction chamber in which a semiconductor wafer to be processed is placed;

means for supplying process gas into the reaction chamber;

a microwave oscillator which generates microwaves to be used for exciting plasma in the reaction chamber;

a microwave introducing window having a transmission portion through which the microwaves pass into the reaction chamber;

an insulation thin film provided on a surface of the microwave introducing window which is exposed to the reaction chamber, the insulation thin film being made of inorganic material;

a conductive thin film provided on the surface of the microwave introducing window, the conductive thin film being provided with microwave transmission openings and being formed by a plasma sputtering technique and being grounded to act as an electrode, and

a high frequency power supply which applies high frequency voltage to the semiconductor wafer, so that plasma is generated in the reaction chamber with the microwaves supplied through the microwave introducing window.

17. plasma processing apparatus, comprising:

a processing chamber in which an object to be processed is placed;

means for supplying process gas into the processing chamber;

means for generating microwaves to be used for exciting plasma in the processing chamber;

a microwave introducing member having a transmission portion through which the microwaves pass into the processing chamber;

an insulation thin film provided on a surface of the microwave introducing member which is exposed to the processing chamber;

a conductive thin film provided on the insulation thin film, the conductive thin film being provided with microwave transmission openings and being grounded to act as an electrode; and

a high frequency power supply which applies high frequency voltage to the object, so that plasma is generated in the processing chamber with microwaves supplied through the microwaves introducing member.