Photodetector and solid-state imaging apparatus

• US 5,912,463 A
• Filed: 08/18/1997
• Issued: 06/15/1999
• Est. Priority Date: 08/19/1996
• Status: Expired due to Term

• Current Assignee: Hamamatsu Photonics KK
• Original Assignee: Hamamatsu Photonics KK
• Inventors: Takahashi, Hideo, Mizuno, Seiichiro, Ishihara, Masatoshi
• Primary Examiner(s): Westin, Edward P.
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US08/912,694
• Time in Patent Office: 666 Days
• Field of Search: 250/338.1, 250/339.09, 250/341.5, 250/252.1 A, 250/214 C, 250/216, 250/214 R, 348/243, 377/59, 327/552
• US Class Current: 250/338.1
• CPC Class Codes: G01J 1/44 Electric circuits for command of an exposure part G03B7/02
• CPC Class Codes: H03F 3/082 with FET's H03F3/085 takes precedence
• CPC Class Codes: H04N 25/63 applied to dark current
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

A light chopper periodically transmits and blocks light, and first a dark current cancelling circuit determines an approximate mean value of the dark current from a photodiode when the light is blocked and cancels thus the mean value from the current signal fed into the integrated circuit, add to this, a differential arithmetic circuit that subtracts the remaining dark current component from the output of the integration circuit, thus the remaining signal indicates only the signal current component.

Claims

1. A photodetector comprising:

a light chopper for periodically transmitting and blocking light to be measured;

a photoelectric conversion element which generates an electric charge in response to an intensity of light to be measured incident thereon and outputs thus generated electric charge as a current signal;

a dark current cancelling circuit which determines, based on the signal outputted from said conversion element when said light is blocked and a dark current cancel instruction signal is insignificant, an approximate mean value of dark current and cancels thus determined mean value from the signal outputted from the conversion element when the dark current cancel instruction signal is significant;

an integrating circuit which, according to an integration instruction signal, integrates the remaining current from said dark current cancelling circuit and causes thus integrated signal to be held at a first capacitor connected between input and output terminals thereof;

a differential arithmetic circuit which, in response to a subtraction instruction signal and based on a signal outputted from said integrating circuit, holds a first value integrated for a predetermined time when said light is blocked and outputs a signal corresponding to a difference between said first value and a second value integrated for said predetermined time when said light is transmitted; and

a timing generating circuit which, based on a light transmitting state indication signal outputted from said light chopper and in synchronization with a change in said light transmitting state indication signal, outputs said integration instruction signal, said dark current cancel instruction signal, and said subtraction instruction signal.

2. A photodetector according to claim 1, wherein said photoelectric conversion element is a photodiode having a cathode terminal set to a reference potential;

and

wherein said integrating circuit comprises an operational amplifier having a negative input terminal for receiving the signal outputted from said conversion element and a positive input terminal set to said reference potential.

3. A photodetector according to claim 1, wherein said dark current cancelling circuit comprises:

a field-effect transistor having a source terminal connected to an input terminal of said integrating circuit and a drain terminal set to a reference potential;

a second capacitor having a first terminal connected to a gate terminal of said field-effect transistor and a second terminal set to said reference potential; and

a first switch element having a first terminal connected to the gate terminal of said field-effect transistor and a second terminal connected to the output terminal of said integrating circuit, said first switch element opening and closing in response to said dark current cancel instruction signal.

4. A photodetector according to claim 1, wherein said light to be measured is an infrared ray, and wherein said photoelectric conversion element is a photodiode comprising InGaAs.

5. A solid-state imaging apparatus wherein the photodetectors according to claim 1 are arranged in a one-dimensional or two-dimensional form.

6. A photodetector comprising:

a first photoelectric conversion element which generates an electric charge in response to an intensity of light to be measured incident thereon and outputs thus generated electric charge as a current signal;

a second photoelectric conversion element having a light-shield and a dark current characteristic substantially identical to that of said first conversion element;

a dark current cancelling circuit which determines, based on the signal outputted from said second conversion element when a dark current cancel instruction signal is insignificant, an approximate mean value of dark current and cancels thus determined mean value from the signal outputted either from the first or second conversion element according to a light detection instruction signal when said dark current cancel instruction signal is significant;

an integrating circuit which, according to an integration instruction signal, integrates the remaining current from said dark current cancelling circuit respectively when a light detection instruction signal is significant and insignificant, and causes thus integrated signal to be held at a first capacitor connected between input and output terminals thereof;

a differential arithmetic circuit which receives a signal outputted from said integrating circuit, in response to a subtraction instruction signal, holds a first value corresponding to said second conversion element for a predetermined time, and outputs a signal corresponding to a difference between said first value and a second value corresponding to said first conversion element for said predetermined time; and

a timing generating circuit for outputting said light detection instruction signal, said integration instruction signal, said dark current cancel instruction signal, and said subtraction instruction signal.

7. A photodetector according to claim 6, wherein each of said first and second conversion element is a photodiode having a cathode terminal set to a reference potential;

and

wherein said integrating circuit comprises an operational amplifier having a negative input terminal for receiving the signals outputted from said first and second conversion elements and a positive input terminal set to said reference potential.

8. A photodetector according to claim 6, wherein said dark current cancelling circuit comprises:

a field-effect transistor having a source terminal connected to an input terminal of said integrating circuit and a drain terminal set to a reference potential;

a second capacitor having a first terminal connected to a gate terminal of said field-effect transistor and a second terminal set to said reference potential; and

a first switch element having a first terminal connected to the gate terminal of said field-effect transistor and a second terminal connected to the output terminal of said integrating circuit, said first switch element opening and closing in response to said dark current cancel instruction signal.

9. A photodetector according to claim 6, further comprising a current signal selecting circuit, said current signal selecting circuit comprising:

a second switch element having a first terminal connected to an output terminal of said first conversion element and a second terminal connected to an input terminal of said integrating circuit, said second switch element closing when said light detection instruction signal is significant;

a third switch element having a first terminal connected to the output terminal of said first conversion element and a second terminal set to a reference potential, said third switch element closing when said light detection instruction signal is insignificant;

a fourth switch element having a first terminal connected to an output terminal of said second conversion element and a second terminal connected to an input terminal of said integrating circuit, said fourth switch element closing when said light detection instruction signal is insignificant; and

a fifth switch element having a first terminal connected to the output terminal of said second conversion element and a second terminal set to said reference potential, said fifth switch element closing when said light detection instruction signal is significant.

10. A photodetector according to claim 6, wherein said light to be measured is an infrared ray, and wherein each of said first and second photoelectric conversion elements is a photodiode comprising InGaAs.

11. A solid-state imaging apparatus wherein the photodetectors according to claim 6 are arranged in a one-dimensional or two-dimensional form.

12. A photodetector comprising:

a light source for outputting, in response to a light irradiation instruction signal, probe light to irradiate an object to be measured;

a photoelectric conversion element which generates an electric charge in response to an intensity of light to be measured generated upon irradiation with said probe light and outputs thus generated electric charge as a current signal;

a dark current cancelling circuit which determines, based on a signal outputted from said conversion element when said probe light is not irradiated, an approximate mean value of dark current and, in response to a dark current cancel instruction signal, cancels said mean value from the signal outputted from said conversion element;

an integrating circuit which, according to an integration instruction signal, integrates the remaining current from said dark current cancelling circuit and causes thus integrated signal to be held at a first capacitor connected between input and output terminals thereof;

a differential arithmetic circuit which, in response to a subtraction instruction signal and based on a signal outputted from said integrating circuit, holds a first value for a predetermined time when said probe light is not irradiated and outputs a signal corresponding to a difference between said first value and a second value for said predetermined time when said probe light is irradiated; and

a timing generating circuit for outputting said light irradiation instruction signal, said integration instruction signal, said dark current cancel instruction signal, and said subtraction instruction signal.

13. A photodetector according to claim 12, wherein said photoelectric conversion element is a photodiode having a cathode terminal set to a reference potential;

and

wherein said integrating circuit comprises an operational amplifier having a negative input terminal for receiving the signal from said conversion element and a positive input terminal set to said reference potential.

14. A photodetector according to claim 12, wherein said dark current cancelling circuit comprises:

a field-effect transistor having a source terminal connected to an input terminal of said integrating circuit and a drain terminal set to a reference potential;

a second capacitor having a first terminal connected to a gate terminal of said field-effect transistor and a second terminal set to said reference potential; and

a first switch element having a first terminal connected to the gate terminal of said field-effect transistor and a second terminal connected to the output terminal of said integrating circuit, said first switch element opening and closing in response to said dark current cancel instruction signal.

15. A photodetector according to claim 12, wherein said light to be measured is an infrared ray, and wherein said photoelectric conversion element is a photodiode comprising InGaAs.

16. A solid-state imaging apparatus wherein the photodetectors according to claim 12 are arranged in a one-dimensional or two-dimensional form.