Infrared detector and manufacturing process

• US 5,912,464 A
• Filed: 08/01/1997
• Issued: 06/15/1999
• Est. Priority Date: 08/08/1996
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Vilain, Michel, Yon, Jean-Jacques
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US08/905,059
• Time in Patent Office: 683 Days
• Field of Search: 250/338.4
• US Class Current: 250/338.4
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 27/14669 Infrared imagers
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence

Abstract

An infrared detector includes a sensitive part having a sensitive element and conducting elements. The sensitive element includes a layer of material in which the resistivity varies with the temperature. The conducting elements perform the functions of electrodes for the detector and infrared absorber. At least one support element for the sensitive part is capable of positioning the sensitive part, electrically connecting the sensitive part to a readout circuit, and thermally insulating the sensitive part from the rest of the structure. All conducting elements are places on the same surface of the layer of temperature sensitive material. The detector is manufactured according to a forming and etching process.

Claims

1. The invention relates to an infrared detector including:

a sensitive part comprising

a sensitive element comprising a layer of material in which the resistivity varies with the temperature,

conducting elements carrying out the function of electrodes for the said detector and the function of infrared absorber;

at least one support element for the sensitive part capable of positioning the said sensitive part, electrically connecting it to a readout circuit and thermally insulating it from the readout circuit;

in which all conducting elements are placed on the same surface of the layer of temperature sensitive material.

2. Detector according to claim 1, in which the conducting elements comprise two interleaved electrodes simultaneously performing the functions of electrodes and absorbers, these electrodes being connected to the readout circuit.

3. Detector according to claim 1, in which the conducting elements comprise two electrodes of a first type connected to the readout circuit, and at least one electrode of second type at a floating potential, the electrode of the second type performing solely the absorber function and the electrodes of the first type performing the functions of electrodes and absorber at the same time.

4. Detector according to claim 1, in which at least two conducting elements provide the electrical connection to the readout circuit.

5. Detector according to claim 1, in which the said surface of the sensitive material layer is the lower surface, the conducting elements being located on the said layer.

6. Detector according to claim 1, in which the said surface of the layer of sensitive material is the upper surface, the conducting elements being located on the said layer.

7. Detector according to claim 1, further comprising a second layer of sensitive material wherein the conducting elements are placed on the same surface of the first layer and the conducting elements are inserted between the two layers of sensitive material.

8. Detector according to claim 1, in which the temperature sensitive material is amorphous silicon or vanadium oxide.

9. Detector according to claim 1, in which the free space defined between the conducting elements is composed solely of temperature sensitive material.

10. Detector according to claim 1, in which a reflector is provided on a surface of a substrate supporting the readout circuit, and located at λ

/4 under the plane of the sensitive element, where λ

is the typical wave length of the received radiation.

11. Detector according to claim 1, in which the pattern of the conducting elements is repeated at a pitch typically between λ

and λ

/2 to obtain an average absorption exceeding 90%.

12. Detector according to claim 1, in which each support element includes at least one connection pillar and at least one arm.

13. Infrared detector which is composed of a set of detectors according to claim 1.

14. Process for the manufacture of an infrared detector, which comprises the following steps, starting from a previously manufactured readout circuit made on a substrate:

a) formation of a sacrificial layer;

b) deposit of at least one conducting layer to make conducting elements;

c) make at least one contact opening to the readout circuit by local etching of the conducting layer and the sacrificial layer;

d) deposit of at least one conducting material and etching of this material in order to form the electrical connection between conducting elements and the readout circuit, the pattern thus being formed making up the support pillar;

e) etching of the conducting layer deposited in step b) in order to define the patterns of the conducting elements;

f) deposit of the temperature sensitive material on the assembly, and etching of the various layers located above the sacrificial layer in order to define the sensitive element and the support arm;

g) etching of the sacrificial layer so as to release the sensitive part and the pillar.

15. Process according to claim 14, in which step f) depositing the sensitive material is done before step b), the sensitive material then being etched in step c).

16. Process according to claim 14, further comprising the step of depositing a first layer of sensitive material before step b) wherein the sensitive material is deposited as a second layer in step f), the first layer of sensitive material then being among the layers etched in step c).

17. Process according to claim 14, in which step d) is done before step b).

18. Process according to claim 14, in which a metallic layer is deposited and etched to form a reflector, before step a).

19. Process according to claim 14, in which the sacrificial layer is a polyimide layer which is annealed.

20. Process according to claim 14, in which the conducting layer in step b) is a dual layer of titanium nitride and aluminium, the conducting material in step d) then being deposited after completing steps b) and c), this conducting material and the aluminium then being etched in the same way as in step d).

21. Process according to claim 14, in which the conducting material in step d) is the multilayer, at least one of the layers being formed by LPCVD.

22. Process according to claim 14, in which the conducting elements have first and second surfaces, the sensitive material being in contact with one of the surfaces of the said elements, the other surface being in contact with a layer of passive material.

23. Process according to claim 14, in which a layer of passive material is deposited on the surface(s) of the sensitive material not in contact with conducting elements.

24. Process according to claim 23, in which the passive material is chosen from silicon oxide, silicon nitride and amorphous silicon.